Invited Speakers

Core Areas

Area 1 Advanced LSI Processing & Materials Science

  • Band offsets at high-k oxide/semiconductor interfaces: From silicon to high-mobility channel materials
    V. V. Afanas'ev
    (KU Leuven, Belgium)
  • Nickel Compound and Alloy Contacts to Nanoscale Si, Ge, and InGaAs Channels
    S. A. Dayeh
    (UCSD, USA)
  • Heated Ion Implantation Technology for High Performance SOI FinFETs
    W. Mizubayashi
    (AIST, Japan)
  • Negative Capacitance Transistors
    S. Salahuddin
    (UC Berkeley, USA)

Area 2 Advanced Interconnect and 3D Integration/ Materials and Characterization

  • High-density Silicon Optical Interposer for Inter-chip Interconnect
    T. Nakamura
    (PETRA, Japan)
  • Technology and Application Requirements of 2.5D/3D Field Programmable System-in-Package (SiP)
    A. Rahman
    (Altera, USA)
  • A Possibility of Cross-Bar Wiring in Three-Dimensional Crystallographic Space
    H. M. Yamamoto
    (IMS, Japan)
    C. Y. Yang
    (SCU, USA)

Area 3 CMOS Devices / Device Physics

  • Tunnel-FET Transistors for 13nm Gate-Length and Beyond
    U.E. Avci
    (Intel, USA)
  • Drive Current Performance of Inversion Mode Ge CMOS Transistors
    X. Gong
    (NUS, Singapore)
  • Self-Heating Effects in Nanoscale Planar SOI and Fin FETs [Tentative]
    T. Takahashi
    (Keio Univ., Japan)
  • A 16nm FinFET CMOS Technology for Mobile SoC and Computing Applications
    S.-Y. Wu
    (TSMC, Taiwan)

Area 4 Advanced Memory Technology

  • Scaling of resistive switching devices
    D. Ielmini
    (POLIMI, Italy)
  • Current Status of Cation-Based Resistive Memory
    M. N. Kozicki
    (ASU, USA)
  • Trends on Advanced Semiconductor Memories
    A. Nitayama
    (Tohoku Univ., Japan)
  • Switching current and thermal stability of perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm
    H. Sato
    (Tohoku Univ., Japan)

Area 5 Advanced Circuits and Systems

  • Time Difference Amplifier and Its Application for TDC
    T. Nakura
    (Univ. of Tokyo, Japan)
  • MEMS Neural Probes by CMOS Technology and Micromachining
    O. Paul
    (Univ. of Freiburg, Germany)
  • Ultra-Wideband Technology for Short-Range Communications
    W. Rhee
    (Tsinghua Univ., China)

Area 6 Compound Semiconductor Electron Devices & Related Technologies

  • High Performance Ⅲ-Ⅴ MOS Technologies
    M. J. W. Rodwell
    (UCSB, USA)
  • Room-Temperature Resonant-Tunneling-Diode Terahertz Oscillator
    S. Suzuki
    (Tokyo Tech, Japan)
  • Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors
    E. Zanoni
    (Univ. of Padova, Italy)

Area 7 Photonic Devices and Related Technologies

  • Hybrid Ⅲ-Ⅴ on Silicon Lasers
    B. Ben Bakir
    (CEA-Leti, France)
  • Germanium Tin Light Emitters on Silicon
    E. Kasper
    (Univ. Stuttgart, Germany)
  • Luxtera's Silicon Photonics Platform for Transceiver Manufacturing
    M. P. Mack
    (Luxtera, USA)
  • Optical isolators and circulators on Si waveguide platforms
    T. Mizumoto
    (Tokyo Tech, Japan)

Area 8 Advanced Material Synthesis and Crystal Growth Technology

  • Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology
    P. Aseev
    (ISOM, Spain)
  • Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In2O3, Ga2O3, and SnO2
    O. Bierwagen
    (PDI, Germany)
  • Growth, characterization, and functionalization of graphene and hexagonal boron nitride
    H. Hibino
    (NTT BRL, Japan)
  • Metal-Induced Crystallization - Fundamentals and Applications
    Z. Wang
    (Max Planck Inst., Germany)

Area 9 Physics and Applications of Novel Functional Devices and Materials

  • Band nesting in semiconducting transition metal dichalcognide
    G. Eda
    (NUS, Singapore)
  • Quantum anomalous Hall effect in magnetically doped topological insulator
    K. He
    (Tsinghua Univ., China)
  • Spin-valley physics in 2D crystals
    Y. Iwasa
    (Univ. of Tokyo, Japan)
  • Angular momentum conversion from single photons to single electron spins in a lateral double quantum dot
    A. Oiwa
    (Univ. of Tokyo, Japan)

Area 10 Organic Materials Science, Device Physics, and Applications

  • Organic Bioelectronics
    M. Berggren
    (Linköping Univ., Sweden)
  • Exciplex Forming Co-Hosts as a Platform for OLEDs with Ultimate Efficiency
    J.-J. Kim
    (SNU, Korea)
  • Polymeric Optical Devices with Printable and Flexible Electrode
    Y. Ohmori
    (Osaka Univ., Japan)
  • Recent progress in polymer light emitting materials
    Takeshi Yamada
    (Sumitomo Chemical Co., Ltd., Japan)
Strategic Areas

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

  • Device Technologies for Cell and Tissue Analysis
    T. Fujii
    (Univ. of Tokyo, Japan)
  • Silicon and reduced graphene oxide device concepts for electronically interfacing individual cells in culture
    S. Ingebrandt
    (UASK, Germany)
  • Multi-channel recording system with UWB wireless data transmitter for Brain-Machine Interface
    T. Suzuki
    (NICT, Japan)
  • Microfluidic biochip technology for biological cell research
    M.-H. Wu
    (CGU, Taiwan)

Area 12 Spintronics Materials and Devices

  • On-Chip Nonreciprocal Photonic Devices Using Magneto-Optical Oxide Thin Films
    L. Bi
    (UESTC, China)
  • Engineering materials for all-optical helicity-dependent magnetic switching
    M. Cinchetti
    (Univ. of Kaiserslautern, Germany)
  • Magneto-reprogrammable semiconductor logic at room temperature
    J. Hong
    (Korea Univ., Korea)
  • Progress of STT-MRAM Technology and application to low-power memory system
    H. Yoda
    (TOSHIBA, Japan)

Area 13 Applications of Nanotubes, Nanowires, and Graphene

  • Advanced emission properties and lasing from (In,Ga)As nanowires
    G. Koblmueller
    (WSI, Germany)
  • Carbon Nanotube Computer: Transforming Scientific Discoveries into Working Systems
    M. Shulaker
    (Stanford Univ., USA)
  • Majorana fermions in semiconductor nanowires
    H. Xu
    (Lund Univ./Peking Univ., Sweden/China)

Area 14 Power Devices and Materials

  • The Continuing Evolution of Silicon Carbide Power MOSFETs
    J. A. Cooper
    (Purdue Univ., USA)
  • Accurate physical compact models of high-voltage/power semiconductor devices for efficient design of performance-optimized circuits and systems
    H. J. Mattausch
    (Hiroshima Univ., Japan)
  • Commercialization of the high voltage Gallium Nitride HEMT
    P. Parikh
    (Transphorm, USA)
  • Challenges to the silicon IGBT limit with PNM structure
    M. Sumitomo
    (DENSO, Japan)

Area 15 Photovoltaic Materials and Devices

  • Design and Characterizations of Perovskite Solar Cells
    W.-G. Diau
    (NCTU, Taiwan)
  • High Efficiency, Flexible, Thin Film Ⅲ-Ⅴ Solar Cell Technology
    G. S. Higashi
    (Alta Devices, USA)
  • Cu2ZnSnS4 Solar Cells Fabricated by an Electrochemical Technique
    S. Ikeda
    (Osaka Univ., Japan)
  • Development of Heterojunction Back Contact Si Solar Cells
    J. Nakamura
    (SHARP, Japan)
    H. Segawa
    (Univ. of Tokyo, Japan)