INVITED SPEAKERS

CORE AREAS

Area 1

Advanced LSI Processing & Materials Science

“3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography”
A. K. Kambham (IMEC, Belgium)

“Low temperature microwave annealing process for Ge MOSFETs”
Y. -J. Lee (National Nano Device Laboratories, Taiwan)

“Strain engineering for FinFETs”
A. Nainani (Applied Materials, USA)

“Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental”
Y. Yue (National Univ. of Singapore, Singapore)

Area 2

Advanced Interconnect / Interconnect Materials and Characterization

“3D and Hetero Integration (e-BRAIN Project)” (Tentative)
M. Fernández-Bolaños (Nanolab EPFL, Switzerland)

“Ge active photonic devices on Si for optical interconnects”
Y. Ishikawa (Univ. of Tokyo, Japan)

“BEOL-Transistor Technology with InGaZnO Channel for On-chip High/Low Voltage Bridging I/Os”
K. Kaneko (Renesas, Japan)

“Contact Resistance Optimization for Nanocarbon Interconnects”
C. Y. Yang (Santa Clara Univ., USA)

Area 3

CMOS Devices / Device Physics

“Process/Design co-optimization with FDSOI Technology for Advanced CMOS Applications”
F. Arnaud (STMicroelectronics, France)

“Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs”
Y. Kamakura (Osaka Univ., Japan)

“Ultralow-Voltage Operation SOTB-CMOS Technology toward Energy Efficient Electronics” (Tentative)
N. Sugii (LEAP, Japan)

Area 4

Advanced Memory Technology

“Power Gating Technologies in STT-MRAMs for Improving both Power and Performance”
T.Ohsawa (Tohoku Univ., Japan)

“Quantum Mechanics-Based Studies on Resistive Random Access Memories”
K. Shiraishi (Univ. of Tsukuba, Japan)

“Modeling of Transition Metal Oxide Based RRAM Devices”
J.F. Kang (Peking Univ., China)

Area 5

Advanced Circuits and Systems

“Smart Infrared Detector”
M. Denoual (ENSI Caen, France)

“Ultra-high speed image sensors for scientific imaging”
R. Kuroda (Tohoku Univ., Japan)

“Properties and Application of Crystalline In-Ga-Zn-Oxide Semiconductor”
S. Yamazaki (SEL, Japan)

“High Performance Embedded Multi-Core for Multimedia Applications”
X. Zeng (Fudan Univ., China)

Area 6

Compound Semiconductor Electron Devices and Related Technologies

“High-Frequency Response in Buried-Channel InGaAs MOSFETs”
D. -H. Kim (GLOBALFOUNDRIES, USA)

“GaN: The Silicon of the 21st Century”
T. Palacios (MIT, USA)

“Recent developments of GaN HEMTs and MMICs for high power electronics”
P. Waltereit (IAF, Germany)

Area 7

Photonic Devices and Optoelectronic Integration

“CMOS Compatible Traveling Wave Electro-Optic Modulators and a Figure-of-Merit-Based Non-Return-to-Zero Transmitter-Link-Penalty Calculation Protocol'”
D. Gill (IBM T. J. Watson Research Center, USA)

“High speed silicon modulators for integrated transceivers”
G. Reed (Univ. of Southampton, UK)

“Inp based 1.55um quantum dot materials and lasers for ultra-narrowLine width applications”
J. P. Reithmaier (Univ. of Kassel, Germany)

“Coherent manipulation of light-matter interactions using quantum dots coupled to photonic crystals”
E. Waks (Univ. of Maryland, USA)

Area 8

Advanced Material Synthesis and Crystal Growth Technology

“InN/InGaN Quantum Dots: A Surprise for Highly Sensitive and Fast Potentiometric Biosensors”
N. H. Alvi (Technical Univ. of Madrid, Spain)

“Water Splitting in Au Nanomaterials or Quantum Dots Sensitized ZnO Nanowires-array Photoelectrodes”
R. -S. Liu (National Taiwan Univ., Taiwan)

“Hybrid-Formation of Single-Crystalline GeSi(Sn)-on-Insulator Structures by Self-Organized Rapid-Melting-Growth” (Tentative)
M. Miyao (Kyushu Univ., Japan)

“Atomically controlled diamond: homoepitaxy, doping, and surface structures”
N. Tokuda (Kanazawa Univ., Japan)

Area 9

Physics and Applications of Novel Functional Devices and Materials

“3D Vertical RRAM Architecture and Electrode/Oxide Interface Engineering for Next Generation Mass Storage”
H. H. -Y. Chen (Stanford Univ., USA)

“Semiconductor isotope engineering of silicon and diamond for quantum computation and sensing”
K. M. Itoh (Keio Univ., Japan)

“Resistively detected NMR study of correlated electrons in a GaAs quantum well: fractional quantum Hall states and more”
K. Muraki (NTT Basic Research Labs., Japan)

“Phase-change non-volatile memory equipped with topological insulating properties -Fusion of PCRAM and spintronics-.”
J. Tominaga (AIST, Japan)

Area 10

Organic Materials Science, Device Physics, and Applications

“3rd generation organic light emitting diodes-design for molecular and device architectures-”
C. Adachi (Kyushu Univ., Japan)

“Materials and devices of high-performance organic transistors”
J. Takeya (Osaka Univ., Japan)

“Advances in Flexible Electronics based on Shape Memory Polymers”
W. E. Voit (Univ. of Texas at Dallas, USA)