Short Presentation in Building 2 (11:00-12:15, September 23)
Poster Presentation at Takeda Hall (13:15-14:45, September 23)
| Poster No. | Title | Authors | Affiliations | Country |
| P-1-1 | Strained Si with Smooth and Uniformly Strained Surface Formed by Sputter Epitaxy | H. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui,H. M. H. Chong, H. Mizuta, Y. Suda | Tokyo Univ. of Agri. And Tech., National Inst. of Info. and Commun. Tech., Univ. of Southampton | Japan |
| P-1-2 | Enhancement of Stress Memorization Technique (SMT) by High Thermal Annealing Temperature | H. Y. Chang, J. C. S. Woo | University of California, Los Angeles | USA |
| P-1-3 | Evaluation of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate with Amorphization/Templated Recrystallization Method | P. C. Huang, S. L. Wu, S. J. Chang, J. F. Chen, Y. T. Huang, D. G. Hong, C. Y. Chang, C. Y.Wu, C. T. Lin, M. Ma, O. Cheng, | National Cheng Kung Univ., Cheng Shiu Univ., UMC | Taiwan |
| P-1-4 | Efficient Activation of As in Ultrashallow Junction Induced by Thermal Plasma Jet Microsecond Annealing | K. Matsumoto, S. Higashi, H. Murakami, S. Miyazaki | Hiroshima Univ. | Japan |
| P-1-5 | Depth Profile and Retained Dose in SiO2/Si Structure for B18HX+ Implantation | Y. Kawasaki, H. Yoshimura, K. Asai, K. Shibahara | Renesas Electronics Corp., Hiroshima Univ. | Japan |
| P-1-6 | Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition | K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, S. Zaima, | Nagoya Univ. | Japan |
| P-1-7 | Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy | M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, S. Zaima | Nagoya Univ. | Japan |
| P-1-8 | In-situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm EOT Utilizing ECR Sputtering on Three-Dimensional Si Structures | T. Sano, S. Ohmi | Tokyo Tech | Japan |
| P-1-9 | The Influence of La and Zr Doping on TDDB Characteristics of HfO2 Thin Films | H. W. Chen, C. H. Liu, S. Y. Chen, Y. W. Liao, H. W. Hsu, H. S. Huang, L. W. Cheng, | National Taipei Univ. of Tech., National Taiwan Normal Univ., UMC | Taiwan |
| P-1-10 | Temperature Dependence of Exclusive SiO2Formation during Thermal Oxidation of SiO1-X GeX Alloy Layer on Si(001) Surfaces | H. Hozumi, S. Ogawa, A. Yoshigoe, S. Ishidzuka, J. R. Harries, Y. Teraoka, Y. Takakuwa, | Tohoku Univ., JAEA, Akita Nat. Col. Tech. | Japan |
| P-1-11 | Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO2/GeO2 Bi-Layer Passivation | K. Hirayama, R. Ueno, Y. Iwamura, K. Yoshino, D. Wang, H. Yang, H. Nakashima | Kyushu Univ. | Japan |
| P-1-12 | Improvement of The Property of FET Having The HfO2/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment | D. Lee, H. Imajo, T. Kanashima, M. Okuyama | Osaka Univ. | Japan |
| P-1-13 | Study on Native Oxidation of Ge (111) and (100) Surfaces | S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi, S. Miyazaki | Hiroshima Univ. | Japan |
| P-1-14 | Annealing Effects on Ge/SiO<sup>2 interface Structure in wafer-bonded germanium-on-insulator substrates | O. Yoshitake, J. Kikkawa, Y. Nakamura, A. Sakai, E. Toyoda, H. Isogai, K. Izunome, | Osaka Univ., Covalent Silicon Co., Ltd. | Japan |
| P-1-15 | Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET | Y. Iwasaki, Y. Nakamura, J. Kikkawa, A. Sakai, M. Sato, E. Toyoda, H. Isogai, K. Izunome | Osaka Univ., Covalent Silicon Corp., Ltd. | Japan |
| P-1-16 | New Concept of Plasma-induced Damage in MNOS FET during Thick Dielectric Film Etching Using Fluorocarbon Gas Plasma | Y. Ichihashi, Y. Ishikawa, S. Samukawa, | Tohoku Univ. | Japan |
| P-1-17 | A Novel Hot DI Water Rinse on SOD Filled Self-Aligned Shallow Trench Isolation for Highly Reliable NAND Flash Memory | C. H. Liu, Y. M. Lin, R. T. Peng, H. C. Wei, H. J. Chien, Y. T. Chiu, L. T. Kuo, H. P. Hwang, M. S. Lee, S. Pittikoun | Powerchip Semiconductor Corp. | Taiwan |
| P-1-18 | High-Performance Poly-Si TFTs with Novel FinFet-like Channel | Y. H. Lue, P. Y. Kuo, Y. H. Wu, T. S. Chao | National Chiao Tung Univ. | Taiwan |
| P-1-19 | Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure | H. Ofuchi, H. Kamada, S. Toyoda, H. Kumigashira, T. Sukegawa, K. Iwamoto, Z. Liu, M. Oshima | JASRI/Spring-8,Univ. of Tokyo, UT-SRRO,JST-CREST,STARC | Japan |
| P-1-20 | Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern | M. Tomita, D. Kosemura, M. Takei, K. Nagata, H. Akamatsu, A. Ogura | Meiji Univ., Research Fellow of the JSPS | Japan |
| P-1-21 | Development of an STM simulator for quantitative dopant profiling | M. Nishizawa, L. Bolotov, T. Tada, H. Fukutome, H. Arimoto, T. Kanayama | MIRAI-AIST,NIRC-AIST | Japan |
| P-2-1 | Development of Versatile Backside Via Technology for 3D System on Chip | Y. Ohara, K. Lee, T. Fukushima, T. Tanaka, M. Koyanagi, | Tohoku Univ. | Japan |
| P-2-2 | RF Modeling of Through Silicon Vias (TSVs) in 3D IC | C. W. Luo, Y. C. Wu, J. Y. Wang, S. S. H. Hsu | National Tsing Hua Univ. | Taiwan |
| P-2-3 | Stress Mapping of Silicon Surrounded by Various Through Silicon Via (TSV) Patterns using Polychromator-Based Multi-Wavelength Raman Spectroscopy | A. Trigg, H. Li, C. K. Cheng, R. Kumar, D. L. Kwong, T. Ueda, T. Ishigaki, K. Kang, W. S. Yoo, | Insitute of Microelectronics, WaferMasters, Inc. | Singapore |
| P-2-4 | Above-CMOS Metal-Pattern Technique for Flexible Inductance Adjustment in Rapid Prototyping of RF SoCs | K. Kotani, A. Sugimoto, Y. Omiya, T. Ito | Tohoku Univ. | Japan |
| P-2-5 | Modeling and Co-Design of Novel Packaging Interposer with IPD Layers | S. M. Wu, T. Y. Wu, B. H. Yu, C. C. Wang | National Univ. of Kaohsiung, Electrical Lab., Corp. Design Division, Corporate R&D, Advanced Semiconductor Engineering (ASE) Inc., Kaohsiung | Taiwan |
| P-2-6 | Multi-Line De-Embedding Technique for Millimeter-Wave Circuit Design | Q. H. Bu, N. Li, N. Takayama, K. Okada, A. Matsuzawa, | Tokyo Tech. | Japan |
| P-2-7 | Numerical Simulation of Organic Low-k Etching in H2/N2 Plasma | T. Yagisawa, T. Makabe | Keio Univ. | Japan |
| P-2-8 | Smooth Patterning of Ru Film by Electrochemical Etching using Organic based Solution | L. Yang, R. Sakae, M. Yashimaru, M. Yamaguchi, I. Kanno, M. Tanaka, C. Kimura, H. Aoki | Osaka Univ., STARC | Japan |
| P-2-9 | Effect of Annealing on Electrical Properties of Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD | M. Sato, S. Ogawa, T. Kaga, E. Ikenaga, Y. Takakuwa, M. Nihei, N. Yokoyama, | Fujitsu Ltd.,Fujitsu Labs Ltd., CREST-JST, Tohoku Univ., JASRI | Japan |
| P-2-10 | In Situ High-Resolution Transmission Electron Microscopy of Electromigration in Silver Nanocontacts | H. Masuda, T. Kizuka | Univ. of Tsukuba | Japan |
| P-3-1 | Experimental Investigations on Ballistic Transport in Multi-Bridged Channel Field Effect Transistors (MBCFETs) | Y. C. Jung, B. H. Hong, L. Choi, S. W. Hwang, K. H. Cho, S. Y. Lee, D. W. Kim, G. Y. Jin, K. S. Oh, | Korea Univ., Samsung Electronics Co., Ltd. | Korea |
| P-3-2 | The Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator (SOI) FinFETs by Quantum Transport Analysis | K. M. Liu, | National Dong Hua Univ. | Taiwan |
| P-3-3 | Technology Computer Aided Design of 65nm SOI MOSFETs through Integrated Process and Device Simulations | E. M. Bazizi, P. F. Fazzini, F. Cristiano, A. Pakfar, C. Tavernier, C. Zechner, N. Zographos, A. Claverie | Lab. CNRS-LAAS, STMicroelectronics, Synopsys Switzerland LLC | France |
| P-3-4 | Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET | L. Du, S. Zhang | Peking Univ. | China |
| P-3-5 | The Observation of the Random Dopant Fluctuation in Strained-SOI Devices | C. Y. Cheng, E. R. Hsieh, S. S. Chung, R. M. Huang, Y. H. Lin, C. T. Tsai, G. H. Ma, C. W. Liang | National Chiao Tung Univ., UMC | Taiwan |
| P-3-6 | Pattern effects induced by RTA and MilliSecond Anneals: Impact on intrafield devices and intrablock Analog resistor electrical dispersion | B. Dumont, P. Morin,H. Bono, R. Beneyton, A. Colin, F. Cacho, M. Haond | STMicroelectronics, CEA-LETI | France |
| P-3-7 | InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 Gate Stacks | S. Lee, R. Iida, S. H. Kim, M. Yokoyama, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Ishii, N. Miyata, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi | Univ. of Tokyo, NAIST, Sumitomo Chemical Co., Ltd. | Japan |
| P-3-9 | Characterization of Tunneling Resistance in Vertical Tunneling FETs | A. Tura, J. C. S. Woo | Univ. of California, Los Angeles | USA |
| P-3-10 | Improvement of High-k/metal Gate pMOSFET performances and reliability with Optimism Si Cap/SiGe channel structure | C. W. Hsu, Y. K. Fang, C. Y. Chen, W. K. Yeh, C. T. Lin, P. Y. Chen | National Cheng Kung Univ., National Univ. of Kaohsiung, UMC, I-Shou Univ. | Taiwan |
| P-3-11 | Electrically Detected Magnetic Resonance Study of Interfacial Traps in a Nitrided Submicron Metal-Oxide-Semiconductor Field Effect Transistor | Y. Yonamoto, N. Akamatsu | Hitachi, Ltd. | Japan |
| P-3-12 | Development of a Multi-Scale Time Dependent Dielectric Breakdown Simulator Based on TBQC and KMC Method: Application to the Evaluation of a Gate Oxide Film for CMOS Technology | H. Tsuboi, K. Inaba, Y. Hayashi, H. Sato, Y. Obara, Y. Suzuki, T. Miyagawa, S. Nakamura, R. Nagumo, R. Miura, A. Suzuki, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, A. Miyamoto | Tohoku Univ. | Japan |
| P-3-13 | Investigation of Low-Cost Stress Memorization Process on Layout and Low-Frequency Noise Performance for Strained-Si nMOSFETs | C. W. Kuo, S. L. Wu, H. Y. Lin, Y. T. Huang, S. J. Chang, D. G. Hong, C. Y. Wu, Y. C. Cheng, O. Cheng | National Cheng Kung Univ.,Cheng Shiu Univ.,UMC | Taiwan |
| P-3-14 | Characterization the random Telegraph noise in 32nm high-k/metal Gate CMOSFETs | W. K.Yeh, C. W. Hsu, Y. K. Fang, C. Y. Chen, C. T. Lin, P. Y. Chen | National Univ. of Kaohsiung, National Cheng Kung Univ., UMC, I-Shou Univ. | Taiwan |
| P-3-15 | Low-Frequency Noise Behavior of La-Doped Hf-Based Dielectric nMOSFETs | D. Y. Choi, C. W. Sohn, H. C. Sagong, M. S. Park, K. T. Lee, R. H. Baek, C. Y. Kang, Y. H. Jeong | POSTECH,SEMATECH | Korea |
| P-3-16 | The Compact Modeling of Zero Temperature Coefficient (ZTC) Point of DTMOS | K. T. Wang, W. C. Lin, T. S. Chao | National Chiao Tung Univ. | Taiwan |
| P-3-17 | A Simple Model for Threshold Voltage of Surrounding-gate MOSFETs With Interface Trapped Charges | C. T. Kuang, L. J. Fan, Y. M. jie | National Univ. of Kaohsiung | Taiwan |
| P-3-18 | A Forward Body Bias Characterization for Low Voltage CMOS Circuits | H. Aoki, M. Shimasue, M. Miyahara, A. Matsuzawa | MODECH Inc., Tokyo Tech | Japan |
| P-3-19 | Investigation of Illuminated High-Frequency Capacitance-Voltage Response in Deep Depletion of HfO2 and SiO2 MOS Capacitors with Ultra-thin Gate Oxides | J. Y. Cheng, J. G. Hwu | National Taiwan Univ. | Taiwan |
| P-3-20 | High Specific Contact Resistance of Ohmic Contacts to n-Ge Source/Drain and Low Transport Characteristics of Ge nMOSFETs | J. Oh, J. Huang, Y. T. Chen, I. Ok, K. Jeon, S. H. Lee, B. Sassman, W. Y. Loh, H. D. Lee, D. H. Ko, P. D. Kirsch, R. Jammy | SEMATECH, Univ.of Texas at Austin,Univ. of California Berkeley, Chungnam Nat'l Univ., Yonsei Univ. | USA |
| P-3-21 | Investigation of SACVD-Based STI Process on Electrical Characteristics of Nanoscale NMOSFETs | H. Y. Lin, S. L. Wu, C. W. Kuo, Y. T. Huang, S. J. Chang, D. G. Hong, C. Y. Wu, C. T. Huang, O. Cheng | National Cheng Kung Univ., Cheng Shiu Univ., United Microelectronics Corp. | Taiwan |
| P-3-22 | Calibration of Linear Piezo Resistance Coefficients using 3-Dimensional Stress Simulation of Si-MOSFETs Structures | A. Satoh, T. Tada, V. Poborchii, T. Kanayama, S. Satoh, H. Arimoto | AIST, Fujitsu Semiconductor Ltd. | Japan |
| P-3-23 | Investigation of Different Capping Layers and Strain Sources for SMT Process | C. C. Liao, M. C. Lin, T. S. Chao | National Chiao Tung Univ. | Taiwan |
| P-3-24 | X-Ray Radiation Effects on CMOS Image Sensor In-Pixel Devices | J. Tan, B. Buttgen, A. J. P. Theuwissen | Delft Univ. of Tech., Harvest Imaging | the Netherlands |
| P-3-25 | High-Performance (S. S.<100 mV/dec) Poly-Si TFTs with Laser Annealed Channel and High-κ Metal-Gate on Glass Substrate | Y. H. Lue, C. H. Chien, P. Y. Kuo, M. J. Yang, H. Y. Lin, T. S. Chao | National Chiao Tung Univ., Toppoly Optoelectronics Corp. | Taiwan |
| P-4-1 | Impedance analysis of controlled-polarization-type ferroelectric-gate TFT using RC distributed constant circuit | T. Fukushima, K. Maeda, T. Yoshimurai, A. Ashida, N. Fujimura | Osaka Prefecture Univ. | Japan |
| P-4-2 | Effect of MIM type selection device on readout margin of cross-point bipolar ReRAM | J. Shin, I.. Kim, J. Park, J. Lee, M. Jo, K. P. Biju, S. Jung, W. Lee, S. Kim, S. Park, D. Lee, H. Hwang | Gwangju Inst. of Sci. and Tech. | Korea |
| P-4-3 | One-Diode-One-Resistor Titanium-Oxide RRAM Fabricated at Room Temperature | C. W. Kuo, J. J. Huang, W. C. Chang, T. H. Hou | National Chiao Tung Univ. | Taiwan |
| P-4-4 | Improved Resistive Switching Uniformity of a Bilayer TiO2 Films | I.. Kim, S. Jung, J. Shin, K. P. Biju, K. Seo, M. siddik, X. J. Liu, K. Lee, H. Hwang | Gwangju Inst. of Sci.and Tech. | Korea |
| P-4-5 | Miniaturization Limit of Memory Cell in Polycrystalline-NiO-ReRAM | K. Dobashi, K. Kinoshita, T. Yoda, S. Kishida | Tottori Univ., Tottori Univ. Electronic Display Research Center | Japan |
| P-4-6 | The observation of "Conduction Spot" on NiO resistance RAM | T. Fujii, H. Kondo, H. Kaji, M. Arita, M. Moniwa, T. Yamaguchi, I.. Fujiwara, M. Yoshimaru, Y. Takahashi | Univ. of Hokkaido, STARC | Japan |
| P-4-7 | Impact of Engineered Buried Ti layer on the Memory Performance of HfOx RRAM | P. S. Chen, H. Y. Lee, Y. S. Chen, P. Y. Gu, F. Chen, M. J, Tsai | MingShin University of Science & Technology,Industrial Technology Research Institute, National Tsing Hua University | Taiwan |
| P-4-8 | High Efficiency Charge Storage Layer for MLC NAND Non-Volatile Memory | S. H. Liu, W. L. Yang, C. W. Chiu, T. S. Chao | Univ. of Feng Chia, Univ. of Feng Chia, Univ. of Chiao Tung | Taiwan |
| P-4-9 | Evaluation of ALD grown strontium-doped HfO2 thin films as capacitor dielectric for 40nm DRAM Device and beyond | J. S. Lim, J. H. Choi, S. J. Chung, S. Y. Kang, M. Y. Park, Y. Kim, K. Cho, C. Y. Yoo | Samsung Electronics Co., Ltd. | Korea |
| P-5-1 | A Low Loss High Selectivity Compact On-Chip Bandpass Filter for 60 GHz Milli-meter Wave CMOS SoC Solution Using Patterned Ground Shields | R. K. Pokharel, X. Liu, R. Dong, H. Kanaya, K. Yoshida, | Kyushu Univ. | Japan |
| P-5-2 | A 1 Gb/s Differential Input Threshold Detection Based BPSK Receiver For IR-UWB Communication Using 180 nm CMOS Technology | M. Hafiz, N. Sasaki, T. Kikkawa | Hiroshima Univ. | Japan |
| P-5-3 | A Fractional-N Frequency Synthesizer-Based Multi-standard I/Q Carrier Generation System in 0.13um CMOS | W. Lou, X. Yan, Z. Geng, N. Wu | Institute of Semiconductors, Chinese Academy of Sciences | China |
| P-5-4 | Digitally Controlled Ring Oscillator for Multi-Standard GHz Applications | A. Tomar, S. Lingala, R. K. Pokharel, H. Kanaya, K. Yoshida | Kyushu Univ. | Japan |
| P-5-5 | The Effect of Field-Plate Technique on CMOS Ring Oscillator | H. C. Chen, C. H. Kuo, S. S. Lu | National Taiwan Univ. of Sci. and Tech., National Taiwan Univ. | Taiwan |
| P-5-6 | A 12b Two-Stage Single-Slope ADC with Time to Digital Converter | M. Shin, M. Ikebe, J. Motohisa, E. Sano | Hokkaido Univ. | Japan |
| P-5-7 | Self-Dithered Digital Delta-Sigma Modulators for Fractional-N PLL Synthesizers | Z. Xu, J. G. Lee, S. Masui, | Tohoku Univ. | Japan |
| P-5-8 | gm/ID Lookup Table Based Operational Transconductance Amplifier Design Featuring Settling Time Optimization | T. Kashimura, T. Konishi, S. Masui, | Tohoku Univ. | Japan |
| P-5-9 | A Novel Soft-Start Control Circuit for Current-Mode Buck DC-DC Converters | K. Shibata, C. K. Pham | The University of Electro-Communications | Japan |
| P-5-10 | A Multiple Time Programmable On-chip Trimming Technique for CMOS Bandgap Reference Circuits | C. H. Wu, H. Lin, M. K. Wang | National Chung Hsing Univ. | Taiwan |
| P-5-11 | A Sub-nanoampere Two-stage Power Management Circuit in 0.35-µm CMOS for Dust-Size Batteryless Sensor Nodes | M. Ugajin, T. Slimamura, S. Mutoh, M. Harada | NTT Corp. | Japan |
| P-5-12 | An Energy Harvest Current-Mode Demodulator for Low Power 3-D Stacked Retinal Prosthesis | K. Kiyoyama, T. Fukushima, M. Koyanagi, T. Tanaka | Nagasaki Institute of Applied Science, Tohoku Univ. | Japan |
| P-5-13 | A Novel RectifierArchitecture for UHF RFID Transponder | J. Cui, J. Akita, A. Kitagawa | Univ. of Kanazawa | Japan |
| P-5-14 | Distribution of Characteristic Changes in MOSFETs Induced by Resin-Molded Packaging Stress | N. Ueda, E. Nishiyama,H. Watanabe, | RICOH Company Ltd. | Japan |
| P-6-1 | Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor | K. Yamaki, S. Sekino, T. Tai, S. Nakamura, T. Yoshitake, A. Furukawa | Tokyo Univ. of Sci., NEC Corp. | Japan |
| P-6-2 | Low Gate Leakage Current InAlAs/InGaAs Metamorphic HEMTs Using HBr + UV Illumination Gate Treatment Technology | C. H. Chen, C. W. Yang, C. K. Lin, H. C. Chiu | Chang Gung Univ. | Taiwan |
| P-6-3 | The low frequency noise analysis in bottom-gated ZnO Thin film Transistors with different active layer thickness | K. S. Jeong, Y. S. Kim, J. G. Park, S. D. Yang, Y. M. Kim, H. J. Yun, H. D. Lee, G. W. Lee | Chungnam National Univ., National NanoFab Center | Korea |
| P-6-4 | Submicron GaN Gunn Diodes with Different Electron Launcher Structures at Terahertz Frequencies | L. A. Yang, Y. Hao, C. Yu, J. Zhang | Xidian Univ. | China |
| P-6-5 | Short Channel Effect of Indium-Gallium-Zinc-Oxide Thin Film Transistors | S. H. Kuk, D. W. Kang,J. S. Lee, S. J. Kim, J. Y. Kwon, M. K. Han | Seoul National Univ. | Korea |
| P-6-6 | Physics-Based Modeling and Analysis of Compound Semiconductor Devices and Circuits in Extreme Environments | M. Turowski, A. Raman, A. Fedoseyev | CFD Research Corp. (CFDRC) | USA |
| P-6-7 | Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs | C. W. Lin, C. K. Lin, H. C. Chiu | Chang Gung Univ. | Taiwan |
| P-6-8 | 10-Gb/s InGaAs P-I-N photodetector with planar buried heterostructure | Y. S. Wang, S. J. Chang, Y. Z. Chiou, S. P. Chang, Y. H. Wu, R. T. Hsu, W. Lin | National Cheng Kung Univ., Southern Taiwan University, LandMark Optoelectronics Corp. | Taiwan |
| P-6-9 | Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation | S. Liu, J. Wang, R. Gong, Z. Dong, M. Yu, C. P. Wen, C. Zeng, Y. Cai, B. Zhang | Peking Univ., Suzhou Inst. of Nano-tech and Nano-bionics | China |
| P-6-10 | Current stress instability analysis of amorphous InGaZnO thin film transistors | J. H. Kang, E. N. Cho, I. Yun, | Yonsei Univ. | Korea |
| P-6-11 | High-Mobility a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric | C. J. Chiu, S. P. Chang, C. Y. Lu, S. J. Chang | National Cheng Kung Univ. | Taiwan |
| P-6-12 | Normally-off GaN MOSFET with ITO Schottky Barrier Source/Drain and (NH4)2SX Surface Treatment | T. H. Kim, C. J. Lee, D. S. Kim, S. Y. Sung, B. K. Jung, Y. W. Heo, J. H. Lee, S. H. Hahm | Kyungbook National Univ., Electronics and Telecommunications Res. Inst. | Korea |
| P-6-13 | Improved optical properties of a-plane InGaN/GaN multiple quantum wells with gradient-stages MQW structure | H. C. Hsu, Y. K. Su, S. J. Huang, C. Y. Cheng, H. C. Chen, J. H. Hong, K. C. Chen, Y. J. Wang, C. Y. Wu, M. C. Chou | National Cheng Kung Univ., Kun Shan Univ. of Tech.,ITRI South Micro Systems Tech. Center | Taiwan |
| P-6-14 | Investigation of Bias Temperature Instability in HfInZnO Thin Film Transistor | J. S. Chang, S. W. Kim, D. W. Kwon, J. H. Kim, J. C. Park, I. Song, U. I. Jung, C. J. Kim, B. G. Park | Natl. Univ. of Seoul,Samsung Adv. Inst. of Tech. | Korea |
| P-6-15 | Study of the CeO2/HfO2/InAs metal-oxide-semiconductor capacitors with different post-deposition-annealing temperatures | T. E. Shie, C. H. Chang, Y. C. Lin, K. Kakushima, H. Iwai, P. C. Lu, T. C. Lin, G. N. Huang, E. Y. Chang | National Chiao-Tung Univ., Tokyo Institute of Tech. | Taiwan |
| P-7-1 | Electrorefractive Effect in Strained InGaAs/InAIAs Five-Layer Asymmetric Coupled Quantum Well | T. Wajima, T. Arakawa, K. Tada | Yokohama National Univ., Kanazawa Inst. Of Tech. | Japan |
| P-7-2 | Modification of Material Parameters for InGaAs/InAlAs Quantum Wells | H. Yamada, Y. Iseri, T. Arakawa, | Yokohama National Univ. | Japan |
| P-7-3 | Influence of Intrinsic Layer Impurity in InGaAs/InAlAs Asymmetric Triple Coupled Quantum Well on Its Electrorefractive Index Change | Y. Amma, K. Ema, T. Arakawa, | Yokohama National Univ. | Japan |
| P-7-4 | Dry Etching of Al-rich AlxGa1-xAs Holes with High Aspect Ratio for Photonic Crystal Fabrication | M. Mochizuki, T. Nakajima, D. Satoi, F. Ishikawa, M. Kondow, M. Hara, H. Aoki | Osaka Univ. | Japan |
| P-7-5 | Two-terminal device based on white-light emitting in GaAs single layer | S. Choi, Y. W. Lee, B. J. Kim, J. Choi, G. W. Seo, H. T. Kim | ETRI,Pukyong National Univ., Univ. of Science and Tech. | Korea |
| P-7-6 | Optical Characterization of Broadband Asymmetrical Quantum Well for Laser Array Application | W. L. Chen | National Changhua Univ. of Edu. | Taiwan |
| P-7-7 | The Output Characteristics of a Soliton Cavity Laser Diode | M. C. Shih, W. C. Su, C. S. Chen | National Univ. of Kaohsiung | Taiwan |
| P-7-8 | Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughening Using Sizu-Controllable SiO2 Nanotube Arrays | D. M. Kuo, S. J. Wang, K. M. Uang, T. M. Chen, W. C. Lee, P. R. Lee | National Cheng Kung Univ.,Wufeng Inst. Of Tech. | Taiwan |
| P-7-9 | Efficiency droop reduction in GaN-based light-emitting diodes by gra-dient-thickness multiple quantum wells | C. H. Wang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang | National Chiao Tung Univ. | Taiwan |
| P-7-10 | An Investigation of GaN-Based LED with MBE Grown Nanopillars by MOCVD. | K. L. Chuang, J. R. Chang, P. M. Tu, C. H. Chiu, Y. J. Li, H. W. Zan, H. C. Kuo, C. Y. Chang | National Chiao Tung Univ. | Taiwan |
| P-7-11 | High Quality Vertical LEDs Fabrication by Means of Mechanical Lift-off | P. M. Tu, S. C. Hsu, M. H. Lo, H. W. Zan, H. C. Kuo, S. C. Wang, Y. J. Cheng, C. Y. Cheng | National Chiao Tung Univ., Tamkang Univ., Academia Sinica | Taiwan |
| P-7-12 | The Improvement of Light Intensity for Nitride-Based MQW LEDs by Gradient-Stage Emitter Layer | S. J. Huang, Y. K. Su, C. Y. Tseng, S. C. Lin, H. C. Hsu, | National Cheng Kung Univ., National Cheng Kung Univ. | Taiwan |
| P-7-13 | Manipulative Polarization of a-plane InGaN/GaN Photonic Crystals for Enhanced Spontaneous Emission | Y. C. Lee, H. H. Huang, Y. R. Wu, P. Yu | National Chiao Tung Univ., National Taiwan Univ. | Taiwan |
| P-7-14 | Reduction in efficiency droop in InGaN/GaN MQWs light-emitting diodes grown on free standing GaN substrate | C. H. Chiu, C. L. Chao, D. W. Lin, Z. Y. Li, H. C. Kuo, T. C. Lu, S. C. Wang, | National Chiao Tung Univ., Industrial Technology Research Inst. | Taiwan |
| P-7-15 | Estimating the Junction Temperature of InGaN and AlGaInP LEDs | Y. J. Lee, C. J. Lee, C. H. Chen | National Taiwan Normal Univ. | Taiwan |
| P-7-16 | Characteristics of μ-Slice InGaN/GaN Light Emitting Diodes Formed by Focused Ion Beam Process | C. K. Hsu, J. K. Sheu, J. K. Wang, M. L. Lee, K. H. Chang, S. J. Tu, W. C. Lai, | National Cheng Kung Univ., Univ. of Southern Taiwan | Taiwan |
| P-7-17 | GaN-based MIS Ultra-violet Photodetectors with the ZrO2 Insulating Layer | C. H. Chen, Y. H. Tsai, S. Y. Tsai, C. F. Cheng | Cheng Shiu Univ. | Taiwan |
| P-7-18 | Fabrication of Multi-Stack Ge Quantum-Dots for Blue to Near-Ultraviolet MOS Photodetectors | R. H. Yeh, S. Y. Lo, C. H. Yang, J. T. Horng, J. W. Hong, | Asia Univ., National Central Univ. | Taiwan |
| P-7-19 | Efficiency Improvement of GaN-Based LEDs with SiO2 Nanorod Array and Nano-Scale Patterned Sapphire Substrate | J. K. Huang, H. W. Huang, K. Y. Lee, H. C. Kuo | National Chiao Tung Univ., Unilite Corp. | Taiwan |
| P-7-20 | Mach-Zehnder Electro-Optic Modulator Fabricated on Silicon-on-Insulator (SOI) Substrate Based on the Multimode Interference (MMI) Effect | R. W. Chuang, M. T. Hsu, Y. C. Chang, S. H. Chou,Y. J. Lee | AOTC, National Cheng Kung Univ., National Nano Device Laboratories | Taiwan |
| P-7-21 | Low loss junction of Si-wire waveguides and silica based waveguides for a hybrid waveguide photonic integrated circuit | Y. Wakayama, T. Kita, H. Yamada | Tohoku Univ. | Japan |
| P-7-22 | Migration-limited relaxation in ErxY2-xSiO5 crystals | T. Nakajima, T. Kimura, H. Isshiki | Univ. of Electro-Communications | Japan |
| P-7-23 | Transmission enhancement of metal-patterned resonant filters on silicon substrates in terahertz frequencies | P. K. Chung, H. C. Huang, S. T. Yen | National Chiao Tung Univ. | China |
| P-8-1 | Growth of semipolar InN (10-13) on LaAlO3(112) substrate | W. C. Chen, S. Y. Kuo, W. T. Lin, J. S. Tian, F. I. Lai, C. N. Hsiao, L. Chang, | National Applied Research Labs., Chang Gung Univ., Yuan-Ze Univ., National Chiao Tung Univ. | Taiwan |
| P-8-2 | Growth Mechanism of Nonpolar A-Plane GaN on Patterned M-Plane Sapphire | K. L. Chuang, J. R. Chang, S. P. Chang, P. M. Tu, Y. C. Hsu, W. Y. Chen, H. W. Zan, T. C. Lu, H. C,. Kuo, C. Y. Chang | National Chiao Tung Univ. | Taiwan |
| P-8-3 | Investigation of etch characteristics of nonpolar GaN by wet chemical etching | H. C. Hsu, Y. K. Su, S. H. Cheng, S. J. Huang, C. Y. Cheng, J. M. Cao, K. C. Chen, Y. J. Wang, C. Y. Wu, M. C. Chou | National Cheng Kung Univ., Kun Shan Univ. of Tech., ITRI South Micro Systems Tech. Center | Taiwan |
| P-8-4 | Laser Treatment of AlN Co-doped ZnO Film for p-type ZnO Fabrication | L. W. Lai, K. W. Lin, C. H. Chang, J. T. Chen | Indus. Tech. Res. Inst. | Taiwan |
| P-8-5 | Zinc oxide (ZnO) grown by Vertical-Plasma-Enhanced Metal Organic Chemical Vapor Deposition (VPEMOCVD) | P. H. Lei, H. F. Kao, F. S. Juang, X. M. Wu | National Formosa Univ. | Taiwan |
| P-8-6 | Fabrication of transparent p-NiO/n-ZnO heterojunction diodes for ultraviolet photodetector | S. Y. Tsai, M. H. Hon, Y. M. Lu, | National Cheng Kung Univ., National University of Tainan | Taiwan |
| P-8-7 | Preparation and Characterization of white ZnS:Pr,Mn,KCl Phosphor | S. H. Yang, C. H. Wang, Y. H. Ling, C. F. Do | National Kaohsiung University of Applied Sciences | Taiwan |
| P-8-8 | Growing evaporated Ge dots with high crystallinity on patterned Si substrate by post thermal annealing | C. W. Chiu, T. W. Liao, H. J. Huang, J. H. Lin, C. H. Kuan | National Taiwan Univ. | Taiwan |
| P-8-9 | Site- and shape-controlled growth of single and pair of InAs quantum dots using AFM anodic oxidation | K. M. Cha, K. Shibata, I. Horiuchi, T. Ueda, K. Hirakawa | IIS/INQIE,CREST-JST | Japan |
| P-8-10 | Graphene Layers on Sapphire Substrates Grown by Alcohol CVD method | Y. Miyasaka, A. Nakamura, J. Temmyo | Shizuoka Univ. | Japan |
| P-8-11 | High electron mobility InSb films grown on Si (111) substrate via √7×𕔇-In and 2×2-In surface reconstructions | S. Khamseh, K. Nakatani, K. Nakayama, M. Mori, K. Maezawa, | Univ. of Toyama | Japan |
| P-8-12 | Facile Fabrication of Two-dimensional Assemblies of Gold Nanoparticles by Using Solvent evaporation method | K. Sugawa, Y. Tanoue, D. Tanaka, T. Sakai | Nihon Univ. | Japan |
| P-8-13 | Fabrication and Photoelectrochemical Properties of Multilayer Assemblies Consisting of Silver-nanoparticles, Polydiacetylene, and Polyions | T. Akiyama, A. Masuhara, Y. Matsuda, T. Arakawa, T. Munaoka, T. Onodera, H. Okikawa, S. Yamada | The University of Shiga Prefecture, Yamagata Univ., Tohoku Univ., Kyushu Univ. | Japan |
| P-8-14 | Self-assembly Patterning of “Quasi-Superparamagnetic” Magnetite Nanooctahedra | J. M. Xue | National Univ. of Singapore | Singapore |
| P-8-15 | Efficient Preparation of Size-Controlled Nanoparticles using Thin Film Laser Ablation in Water | M. Fukudome, H. Ikenoue | Kochi Nat`l Col. of Tech. | Japan |
| P-8-16 | Degradation Mechanism for CLC Poly-Si n-TFTs under Low Vertical-Field HC Stress with Different Laser Annealing Powers | S. Y. Chang, M. C. Wang, Z. Y. Hsieh, C. Chen | Ming Hsin University of Science & Technology, National Taipei Univ. of Tech., National Chiao Tung Univ. | Taiwan |
| P-8-17 | Polarized Thermoreflectance and Reflectance Study of ReS2 and ReS2:Au Single Crystals | T. P. Huang, D. Y. Lin, J. D. Wu, Y. S. Huang | National Changhua Univ. of Edu., National Taiwan Univ. of Sci. Tech. | Taiwan |
| P-9-1 | Full-dimensional analysis of coherent spin dynamics in a semiconductor | T. Inagaki, H. Kosaka, Y. Rikitake, H. Imamura, Y. Mitsumori, K. Edamatsu | Tohoku Univ., CREST-JST, Sendai National College of Technology, AIST | Japan |
| P-9-2 | Ultrasonic wave induced mechanoluminescence | N. Terasaki, H. Yamada, C. N. Xu, | AIST, JST | Japan |
| P-9-3 | Effects of interface grading on electronic states and optical transitions in GaAb type-II quantum dots in GaAs | T. Kawazu, H. Sakaki | NIMS, Toyota Technological Inst. | Japan |
| P-9-4 | Source Engineering for Tunnel Field-Effect Transistor: Elevated Source with Vertical Silicon-Germanium/Germanium Heterostructure | G. Han, P. Guo, Y. Yang, L. Fan, Y. S. Yee, C. Zhan, Y. C. Yeo, | Univ. of Singapore | Singapore |
| P-9-5 | NIS tunneling junction fabricated by superconducting Boron-doped diamond | R. Nomura, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, H. Kawarada | Waseda Univ., NIMS | Japan |
| P-9-6 | Improved Characteristics of MOCVD Grown ZnO TFTs by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified TFT Layer Structure | K. Remashan, Y. S. Choi, S. J. Park, J. H. Jang | GIST | Korea |
| P-9-7 | High-Performance Polycrystalline Silicon Thin-Film Transistor with Nickel-Titanium Oxide by Sol-Gel Spin-Coating and Fluorine Implantation | S. C. Wu, T. H. Hou, S. H. Chuang, H. C. Chou, P. Y. Kuo, T. S. Chao, T. F. Lei, | National Chiao Tung Univ., National Univ. of Kaohsiung | Taiwan |
| P-9-8 | Correlating phonon frequency shift with magnetoelectric effect in the PbTiO3-CoFe2O4 multiferroic system due to interfacial stress | C. Y. Tsai, T. C. Huang, W. F. Hsieh, | National Chiao Tung Univ., National Taiwan Univ., National Cheng Kung Univ. | Taiwan |
| P-9-9 | Light Enhancement of Si-Nanocrystals-Embedded SiOx film on Silicon-on-Insulator Substrate | C. C. Chen, Y. H. Lin, M. H. Shih, G. R. Lin, H. C. Kuo | National Chiao Tung Univ., National Taiwan Univ.,Research Center for Applied Sciences,National Taiwan Univ., National Chiao Tung Univ. | Taiwan |
| P-9-10 | Multistep Electron Injection in a PtSi-Nanodots/Silicon-Quantum-Dots Hybrid Floating Gate in nMOSFETs | M. Ikeda, S. Nakanishi, N. Morisawa, A. Kawanami, K. Makihara, S. Miyazaki | Hiroshima Univ. | Japan |
| P-9-11 | Monolithic Integration of Ni-SPC Poly-Si TFTs and Lateral Large-grained Poly-Si TFTs | A. Hara, K. Kondo, T. Sato, T. Sato | Tohoku Gakuin Univ. | Japan |
| P-9-12 | Electric properties of SONOS memories with embedded silicon nanocrystals in nitride | M. C. Hsieh, T. Y. Chiang, H. A. Dai, C. C. Chen, C. H. Chiang, J. F. Wang, Y. J. Lin, J. Y. He, Y. N. Chen, T. S. Chao, J. F. Chen | National Chiao Tung Univ. | Taiwan |
| P-9-13 | Analysis of MOSFET Electrometer Sensitivity by Radio-Frequency Reflection | M. Kawai, V. Singh, M. Nagasaka, H. Satoh, H. Inokawa, | Shizuoka Univ. | Japan |
| P-10-1 | A stacked organic/inorganic vapor barrier structure encapsulated flexible plastic substrates prepared using plasma-enhanced chemical vapor deposition | M. S. Jeng, C. S. Chuang, L. W. Lai, B. Y. Lin, D. S. Liu, | National Formosa Univ.,Indus. Techn. Res. Inst. | Taiwan |
| P-10-2 | Roll-type Micro-contact printing process with PDMS stamp for patterning conductive Metal Line with Ag ink | J. H. Kim, M. Y. Lee, Y. J. Park, C. K. Song | Dept. of Electronics Eng. Dong-A Univ., Media Device Lab. Dong-A Univ. | Korea |
| P-10-3 | Synthesis and Optical Properties of Polysilanes Containing Anthryl Groups | S. Ishibe, T. Mizuno, H. Tachibana | AIST | Japan |
| P-10-4 | Effects of pore on dielectric constants of films deposited by PECVD | S. Park, K. Kim, G. Chulmin, L. Naeil, K. Youngsoo, L. Dohyung, K. Moosung | R&D Center ATTO.Co,.Ltd, Air Products and chemicals Korea Manufac. | Korea |
| P-10-5 | Estimation of Electron Injection Barrier Height at Metal/ Polymer Interface by Internal Photoemission Spectroscopy and its Schottky Current Analysis | E. Itoh, S. Takaishi | Shinshu Univ. | Japan |
| P-10-6 | Extraction of Energy Density Profile of Bulk and Interface Trap States in Pentacene | S. H. Jeong, C. K. Song | Dong-A Univ. | Korea |
| P-10-7 | Effect of Device Structure on Electrical Conduction of Terphenyl-based Molecule | T. Goto, H. Inokawa, Y. Ono, A. Ono, K. Torimitsu, | NTT Labs., Shizuoka Univ. | Japan |
| P-10-8 | High Efficiency Electrophosphorescence Red OLEDs Using a Thin BPY-OXD Cleaving Layer in an Ir-complex Doped Emitter Layer | C. H. Chen, K. R. Wang, Y. H. Tsai, S. F. Yen, P. Y. Su, C. F. Cheng | Cheng Shiu Univ. | Taiwan |
| P-10-9 | Oriented PFO Films Dye-Doped for Whitening of Polarized EL Devices | C. Heck, T. Mizokuro, N. Tanigaki, | National Institute of Advanced Industrial Science and Technology - AIST | Japan |
| P-10-10 | Application of a Porous Titanium Film to a Counter Electrode of a Dye-sensitized Solar Cell | M. Rahman, R. Kojima, E. F. F. Mehdi, Y. Kimura, M. Niwano | Tohoku Univ. | Japan |
| P-10-11 | Annealing Effects on Polymer Solar Cells with High Polythiophene- fullerene Concentrations | C. S. Ho, E. L. Huang, W. C. Hsu, C. S. Lee, Y. N. Lai, W. H. Lai | National Cheng Kung Univ., Feng Chia Univ. | Taiwan |
| P-10-12 | Construction and Evaluation of Organic Solar Cells Using a Spray-Coating Method | Y. Murakami, H. Ishihara, T. Mizutani, K. Kojima, S. Ochiai | Aich Inst. of Tech | Japan |
| P-10-13 | Silver Nanoparticle-Assisted Photocurrent Generation in Polythiophene-Fullerene Thin Films | J. You, T. Arakawa, H. Yoneda, T. Akiyama, S. Yamada | Kyushu Univ. | Japan |
| P-10-14 | Performance Improvement of OTFT by controlling Crystal Morphology of TIPS-Pentacene | M. J. Kim, G. S. Ryu, J. W. Hwang, C. K. Song | Dong-A Univ., Media Device Lab., | Korea |
| P-10-15 | Numerical Simulation of Contact Resistance in Organic Field-Effect Transistors | S. Nishigami, T. Nagase, T. Kobayashi, H. Naito | Osaka Prefecture Univ., The Research Inst. for Molecular Electronic Device | Japan |
| P-10-16 | Frequency Response of Polymer Field-Effect Transistors Fabricated by a Self-Aligned Method | H. Hatta, Y. Miyagawa, T. Nagase, T. Kobayashi, S. Murakami, M. Watanabe, K. Matsukawa, H. Naito | Univ. of Osaka Prefecture, The Res. Inst. for Molecular Electronic Devices,Tech. Res. Inst. of Osaka Prefecture, Osaka Municipal Technical Res. Inst. | Japan |
| P-10-17 | UV-patternable polymer dielectric for organic thin film transistors | C. M. Wu, H. T. Wang, S. H. Su, M. Yokoyama | I-Shou Univ. | Taiwan |
| P-10-18 | Improvement of Pentacene Organic Thin-Film Transistor Considering Quantum Effect | A. Heya, N. Matsuo | Univ. of Hyogo | Japan |
| P-10-19 | Temperature Dependence of Charge Transport in Polythiophene-Based Field-Effect Transistors | M. Yoshikawa, T. Banno, T. Nagase, T. Kobayashi, S. Murakami, H. Naito | Osaka Prefecture Univ., The Res. Inst. for Molecular Electronic Device, Tech. Res. Inst. of Osaka Prefecture | Japan |
| P-10-20 | Reverser off-set Printing Process for Gate Electrodes of OTFT-Backplane | J. E. Park, M. Y. Lee, S. Chung-kun, | Univ. of Dong-A,Univ. of Dong-A, Media device lab | Korea |
| P-10-21 | Wettability Improvement by Silica Nanoparticle Addition in Solution-Processed TIPS-Pentacene Field-Effect Transistors | S. Yamazaki, T. Hamada, S. Tokai, M. Yoshikawa, T. Nagase, T. Kobayashi, Y. Michiwaki, S. Watase, M. Watanabe, K. Matsukawa, H. Naito, | Citizen Holdings Co., LTD., Osaka Prefecture Univ., Res. Inst. Molecular Electronic Dev., Fuso Chemical Co., LTD., Osaka Municipal Technical Res. Inst. | Japan |
| P-11-1 | Detection of Antigen-Antibody Reaction Using Si Ring Optical Resonators Functionalized with an Immobilized Antibody-Binding Protein | M. Nishida, M. Fukuyama, Y. Abe, Y. Amemiya, T. Ikeda, A. Kuroda, S. Yokoyama, | Hiroshima Univ. | Japan |
| P-11-2 | Control of Supported Lipid Bilayer Self-Spreading through Nanogap by Local Electric Field | Y. Kashimura, K. Furukawa, K. Torimitsu, | NTT Basic Res. Labs. | Japan |
| P-11-3 | Surface Infrared Spctroscopic Study of ATP Synthesis in Mitochondria | Y. Aonuma, R. Yamaguchi, M. Abe, A. Hirano-Iwata, Y. Kimura, Y. Shinohara, M. Niwano | Tohoku Univ., Japan Sci.and Tech.Agency, PRESTO, JST, Univ. of Tokushima | Japan |
| P-11-4 | Rapid Biosensing Platform based on Monitoring Changes in the Optical Reflectance of Porous Silicon due to Penetration by Functionalized Superparamagnetic Beads | P. J. Ko, Y. Morimoto, R. Ishikawa, B. Cho, H. Sohn, A. Sandhu | Tokyo Inst. of Tech., Tokyo Tech. Global COE program, Chosun Univ., Toyohashi Univ. of Tech. | Japan |
| P-11-5 | Differential setup of light-addressable potentiometric sensor with an enzyme reactor | K. Miyamoto, M. Yoshida, T. Wagner, Y. Tatsuo, M. J. SchOning, | Tohoku Univ., Aachen Univ. of Applied Sciences, Research Centre Julich | Japan |
| P-11-6 | Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing | T. C. Yu, C. E. Lue, W. Y. Chuang, C. M. Yang, D. Pijanowska, C. S. Lai | Chang Gung Univ., Device Section, Department of WAT and Devices, Inotera Memories Inc.,Institute of Biocybernetics and Biomedical Engineering, Polish Academy of Sciences | Taiwan |
| P-11-7 | A study of olfactory signal sensing with FET biosensor | M. S. Kim, W. J. Cho, J. Y. Choi, J. O. Lim | Kwangwoon Univ., Kyungpook National Univ. | Korea |
| P-11-8 | Impact of Quantum Mechanical Effects on Silicon Nanowire Biosensors | B. K. Y. Lu, P. Su | National Chiao Tung Univ. | Taiwan |
| P-11-9 | A glucose biosensor based on pH-sensitive Sm2TiO5 electrolyte-insulator-semiconductor | T. M. Pan, C. W. Lin, C. H. Chiang, M. D. Huang, C. Y. Chou, | Chang Gung Univ. | Taiwan |
| P-11-10 | Novel Reference Electrode-Insulator-Nitride-Oxide-Semiconductor (RINOS) Structure with Sm2O3 Sensing Membrane for pH-sensor Application | H. Y. Shih, J. C. Wang, T. L. Lu, C. S. Lai, C. H. Kao, T. M. Pan | Chang Gung Univ. | Taiwan |
| P-11-11 | Compact Electro-Magnetically Operated Microfluidic System for Detection of sub-200 nm Magnetic Labels for Biosensing without External Pumps | T. Takamura, Y. Morimoto, A. Sandhu | Tokyo Tech, Toyohashi Univ. of Tech. | Japan |
| P-11-12 | Monodisperse silver nanoparticles of controlled size for biomedical applications | A. P. Z. Stevenson, D. Blanco Bea, S. Antoranz Contera, A. Iglesias Cerbeto, S. Trigueros | Univ. of Oxford, National Center for Scientific Research | UK |
| P-11-13 | Fabrication of various metallic nanogap electrodes using molecular ruler technique | T. Nishino, R. Negishi, H. Tanaka, T. Ogawa, K. Ishibashi | RIKEN,Chiba Univ.,Osaka Univ. | Japan |
| P-11-14 | Study of electronic structure of catalyst at Triple Phase Boundary in the cathode catalyst layer of PEFCs by using computational chemistry method | D. Kim, H. Kobayashi, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, A. Miyamoto | Univ. of Tohoku | Japan |
| P-12-1 | Power-Aware Bit-Serial Binary Content-Addressable Memory Using Magnetic-Tunnel-Junction-Based Fine-Grained Power-Gating Scheme | S. Matsunaga, M. Natsui, H. Ohno, T. Hanyu | Tohoku Univ. | Japan |
| P-12-2 | Fan-out Value in a Current-Field Driven Spin Transistor | K. Konishi, T. Nozaki, H. Kubota, A. Fukushima, S. Yuasa, M. Shiraishi, Y. Suzuki, | Osaka Univ., AIST | Japan |
| P-12-3 | Operational Conditions of Proposed Spin-Photon Memory | V. Zayets, H. Saito, S. Yuasa, K. Ando | AIST | Japan |
| P-12-4 | HCP-disordered CoPt electrode and exchange control layer for MgO based perpendicular magnetic tunnel junctions | W. Lim, S. C. Oh, J. H. Jeong, W. J. Kim, Y. H. Kim, H. J. Shin, J. E. Lee, S. Choi, C. Chung, | Samsung Electronics Co., Ltd. | Korea |
| P-12-5 | Co Doping Enhanced Giant Magnetocaloric Effect In Mn1-xCoxAs Films Epitaxied On GaAs Films Epitaxied on GoAs(001) | P. Xu, S. Nie, K. Meng, S. Wang, L. Chen, J. Zhao | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences | China |
| P-12-6 | Magnetic properties of quaternary magnetic semiconductor (Cd,Mn,Cr)Te grown by MBE | K. Ishikawa, S. Kuroda | Inst. Mater. Sci., Univ. Tsukuba | Japan |
| P-13-1 | Operation Mechanism of Single-Wall Carbon Nanotube Network FET Studied by Scanning Gate Microscopy | N. Aoki, T. Yahagi, K. Maeda, Y. Ochiai | Chiba Univ | Japan |
| P-13-2 | Simple Fabrication Technique for an Array of Field-effect Transistor Using High-quality as-grown Single-walled Carbon Nanotube from Dip-coated Catalyst by Substrate Surface Modification | S. Aikawa, R. Xiang, E. Einarsson, S. Chiashi, J. Shiomi, E. Nishikawa, S. Maruyama | Univ. of Tokyo,Tokyo Univ. of Sci. | Japan |
| P-13-3 | Electrical Performance Improvement of Carbon Nanotube Network Transistors by Direct Microwave Treatment | J. Y. Han, U. J. Kim, W. Park | Hanyang Univ., Samsung Advanced Inst. Of Tech | Korea |
| P-13-4 | DFT Study on the Adsorption and Dissociation of Hydrogen Peroxide on Fe-filled Single-walled Carbon ￢Nanotubes | J. Moreno, M. David, T. Roman, M. Sakaue, H. Kasai | Osaka Univ.,De La Salle Univ. | Japan |
| P-13-5 | Investigation of UV Polymerized Fullerene Nano Whisker by ESR and FET Characteristics | T. Doi, K. Koyama, N. Aoki, J. P. Bird, Y. Ochiai, | Chiba Univ., Univ. at Buffalo | Japan |
| P-13-6 | Dependency of Young's modulus on diameter in Crystalline C70 Nanotubes | T. Tokumine, K. Miyazawa, T. Kizuka, | Univ. of Tsukuba, National Institute for Material Science | Japan |
| P-13-7 | Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric | M. H. Jung, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, | Tohoku Univ. | Japan |
| P-13-8 | Study on the graphene transfer process from graphitized SiC substrates | S. K. Lim, C. H. Cho, S. Y. Lee, H. J. Hwang, C. G. Kang, Y. G. Lee, J. Ahn, B. H. Lee | Gwangju Inst. Of Sci. and Tech, Hanyang Univ. | Korea |
| P-13-9 | A New Design Window of Fully Depleted Si Nanowire FETs | C. Y. Chen, J. T. Lin, M. H. Chiang, | National Sun Yat-Sen Univ., National Ilan Univ. | Taiwan |
| P-13-10 | Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires | N. Mori, H. Minari, S. Uno, J. Hattori | Osaka Univ., Nagoya Univ., CREST-JST | Japan |
| P-13-11 | Anomalous piezoresistive phenomenon in ultra strained silicon nanowires | A. Lugstein, M. Steinmair, A. Steiger, E. Bertagnolli | Vienna University of Technology | Austria |
| P-13-12 | Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate- All-Around PMOS Silicon Nanowire Field-Effect-Transistors | B. H. Hong, S. J. Lee, S. W. Hwang, Y. Y. Lee, D. Ahn, K. H. Cho, K. H. Yeo, D. W. Kim, G. Y. Jin, D. Park | Korea Univ., Univ. of Seoul,Samsung Electronics Corp. | Korea |
| P-13-13 | Performance Comparisons of Schottky Barrier Transistors Using Si-, Ge- and Ge-Si Core-Shell Nanowires as Channels | J. Pu, L. Sun, R. Han | Peking Univ. | China |
| P-13-14 | Monoclinic-Ga2O3 nanowire-based solar-blind photodetectors | W. Y. Weng, S. J. Chang, G. J. Huang, S. P. Chang | National Cheng Kung University | Taiwan |
| P-13-15 | Enhanced Efficiency of ZnO Nanowires Based Dye-Sensitized Solar Cells with Hetrosensitizer | P. H. Wang, S. J. Wang, K. M. Uang, T. M. Chen, P. R. Wang, T. C. Wang, R. M. Ko, | National Cheng Kung Univ., WuFeng Institute of Technology | Taiwan |
| P-13-16 | Tip engineering of hydrothermally grown ZnO nanorods and its application in low-voltage operable field emitters | C. Y. Kuo, S. J. Wang, W. I. Hsu, F. S. Tsai, R. M. Ko, W. C. Hsu | National Cheng Kung Univ. | Taiwan |
| P-13-17 | Synthesis of Co-Doped Fullerene Nanowhiskers and Cobalt-Encapsulated Carbon Nanocapsules | D. Matsuura, K. Miyazawa, T. Kizuka, | Univ. of Tsukuba, National Institute for Material Science | Japan |
| P-14-1 | Lateral High-Voltage 4H-SiC MOSFETs | W. S. Lee, C. W. Lin, M. S. Yang, C. F. Huang, J. Gong, Z. Feng | National Tsing Hua Univ., TongHai Univ., University of South Carolina | Taiwan |
| P-14-2 | First Principles Calculations on CSL Grain Boundary Impurities in Multicrystalline Silicon | A. Suvitha, N. S. Venkataramanan, R. Sahara, H. Mizuseki, Y. Kawazoe, | Tohoku Univ. | Japan |
| P-14-3 | Omnidirectional antireflective Indium-Tin-Oxide Nanorods on trapezoid-cone nanostructures for crystalline silicon photovoltaics | H. C. Chen, P. C. Tseng, M. A. Tsai, H. C. Kuo | National Chiao Tung Univ. | Taiwan |
| P-14-4 | Material Research on High Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells | T. Tachibana, T. Sameshima, Y. Iwashita, Y. Kiyota, T. Chikyow, H. Yoshida, K. Arafune, S. Satoh, A. Ogura, | Meiji Univ., NIMS, Univ. of Hyogo, CREST-JST | Japan |
| P-14-5 | a-Si:H Solar Cell with Hexagonal Nano-Cylinder Array on Glass Substrate | W. C. Tu, Y. T. Chang, C. H. Yang, D. J. Yeh, C. I. Ho, S. C. Lee | National Taiwan Univ. | Taiwan |
| P-14-6 | Application of sputtered ZnO1-xSx buffer layer for Cu(In, Ga)Se2 solar cells | A. Okamoto, T. Minemoto, H. Takakura, | Ritsumeikan Univ. | Japan |
| P-14-7 | Surface morphology and device performance of CuInS2 solar cells prepared by single and two step evaporation methods | S. Fukamizu, T. Kondo, Y. Oda, T. Minemoto, H. Takakura, | Ritsumeikan Univ. | Japan |
| P-14-8 | Improvement of Film Quality in CIS Thin Films Fabricated by Non-vacuum, Nanoparticles-based Approach | Y. Zhang, M. Ito, A. Yamada, M. Konagai | Tokyo Tech, Toppan Printing Corp., Ltd. | Japan |
| P-14-9 | Interpretation of Crossover in J-V Characteristics of Cu(In,Ga)Se2 Solar Cell Using Lift-off Process | Y. Abe, T. Minemoto, H. Takakura | Ritsumeikan Univ. | Japan |
| P-14-10 | Simulation of temperature characteristics of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light. | Y. Sakurada, Y. Ota, K. Nishioka | Univ. of Miyazaki | Japan |
| P-14-11 | Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence | M. Inagaki, H. Suzuki, A. Suzuki, K. Mutaguchi, A. Fukuyama, N. Kojima, Y. Ohshita, M. Yamaguchi | Toyota Technological Inst., Univ. of Miyazaki | Japan |
| P-14-12 | Enhancement of the efficiency of GaAs-based solar cells by sol-gel-synthesized ZnO nanowire arrays as the antireflection layer | Y. K. Su, C. Y. Cheng, J. Y. Huang, Y. W. Lee | National Cheng Kung Univ. | Taiwan |
| P-14-13 | Fabrication of high quality TiO2 thin films for high conversion efficiency dye-sensitized solar cells by multiple electrophoresis depositions | W. H. Chiu, K. M. Lee, W. F. Hsieh | National Chiao Tung Univ., Industrial Tech. Res. Inst., National Cheng Kung Univ. | Taiwan |