SSDM 2013

SCOPE

CORE AREAS

Area 1

Advanced LSI Processing & Materials Science
(Chair: K. Kita, Univ. of Tokyo)

Papers related to advanced LSI process technologies are solicited, including: (1) gate stack with gate dielectrics, metal gates, channel materials, 3D channels; (2) processes, including scaling-limit breakthroughs, diffusion/oxidation, dry/wet etching, 3D structures, semiconductor surface preparation; (3) reliability physics; (4) material characterization and modeling.

Area 2

Advanced Interconnect / Interconnect Materials and Characterization
(Chair:T. Fukushima, Tohoku Univ.)

Papers related to advanced interconnect materials and processes are solicited including (1) Cu/low-k and packaging technologies; (2) passive components for RF or high-speed operation; (3) TSV, optical interconnects and devices; (4) printable, molecular, and carbon-based interconnects; (5) characterization; (6) reliability phenomena and their physics.

Area 3

CMOS Devices / Device Physics
(Chair:D. Hisamoto , Hitachi)

Papers related to advanced silicon device technologies and physics are solicited, including: (1) advanced or extended CMOS devices; (2) performance-boosting technologies; (3) physics, modeling or simulation of emerging transistors; (4) reliability assessment; (5) circuit-design interaction; (6) manufacturing and yield sciences.

Area 4

Advanced Memory Technology
(Chair: T. Endoh , Tohoku Univ.)

Papers related to advanced memory technology are solicited, including: (1) any volatile or nonvolatile memory devices; (2) memory-function related circuit elements; (3) memory device physics, modeling, simulation; (4) process and characterization; (5) materials, reliability or quality; (6) novel applications.

Area 5

Advanced Circuits and Systems
(Chair: M. Ikebe , Hokkaido Univ.)

Papers related to advanced circuits and systems are solicited, including: (1) digital, analog or mixed-signal circuits or memory; (2) high-speed and high-frequency communication circuits; (3) SoC or SiP technology; (4) device, interface or interconnect design, modeling and related technology; (5) circuits, systems and interfaces for image sensors, smart sensors or MEMS devices, including RF MEMS. Joint session: Area 11 on MEMS.

Area 6

Compound Semiconductor Electron Devices & Related Technologies
(Chair: Y. Miyamoto , Tokyo Tech)

Papers related to compound semiconductor devices are solicited, including: (1) FETs, HFETs, HEMTs, HBTs, or other novel devices; (2) high-voltage or high-temperature electron devices; (3) high-speed devices and ICs; (4) advanced sensors; (5) transparent TFTs; (6) device physics; (7) process and characterization; (8) stability and reliability; (9) novel applications. Joint session: Area 14.

Area 7

Photonic Devices and Optoelectronic Integration
(Chair: Y. Tanaka, Fujitsu Labs. Ltd.)

Papers related to all photonic devices are solicited, including: (1) light sources and photodetectors; (2) amplifiers/attenuators, waveguides, optical wiring and photonic ICs; (3) functional optical devices including MEMS; (4) photonic, plasmonic or optical quantum structures; (5) optical signal-processing; (6) optoelectronic integration; (7) implementation and packaging; (8) novel phenomena and applications; (9) fabrication process and characterization.

Area 8

Advanced Material Synthesis and Crystal Growth Technology
(Chair: K. Hara, Shizuoka Univ.)

Papers related to advanced materials and structures are solicited, including: (1) novel fabrication methods; (2) materials including silicon-related materials, III-V compounds with nitrides, carbon nanomaterials, functional oxides; (3) nanowires and nanoparticles; (4) self-assembly and nanoscale structures; (5) characterization. Joint session: Areas 9 and 13 on graphene and nanowires.

Area 9

Physics and Applications of Novel Functional Devices and Materials
(Chair:H. Gotoh, NTT Corp.)

Papers related to novel materials and devices are solicited, including: (1) quantum phenomena in nanostructures; (2) low-dimensional structures; (3) single electron, hole, exciton, photon, and other quanta based devices; (4) solid state quantum computing and communications; (5) nanoscale characterization; (6) self-assembly and nanofabrication; (7) other novel functional devices and materials. Joint session: Area 8 and 13 on graphene and nanowires.

Area 10

Organic Materials Science, Device Physics, and Applications
(Chair: T. Someya, Univ. of Tokyo)

Papers related to organic materials are solicited, including: (1) organic transistors and circuits; (2) organic light emitting devices; (3) organic diodes, photodetectors or photovoltaics; (4) sensors; (5) molecular electronics; (6) organic-inorganic hybrid systems; (7) interfacial phenomena; (8) process and characterization. Joint session: Area 15 on photovoltaics.