| Session A-1 Organic Device Physics (Room 211, 13:30-14:15, September 22) | |||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-1-1 (Invited) | 13:00 | Electronic Structures and Electric Properties of Rubrene Single Crystal Studied By Photoemission, Time-of-Flight, and Displacement Current Measurements | H. Ishii | Chiba Univ. | Japan |
| A-1-2 | 13:30 | Carrier Propagation Dependence on Applied Potentials in Pentacene OFET Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques | J. Lin, M. Weis,D. Taguchi, T. Manaka, M. Iwamoto | Tokyo Tech., Slovak Aca. Sci | Japan |
| A-1-3 | 13:45 | Transient Absorption Decay Characteristics at Visible Wavelength Region for Nme2-Silole:Fluorene Blend Film | T. Fukuda, A. Furube,R. Kobayashi, N. Kamata,K. Hatano | Saitama Univ., AIST | Japan |
| A-1-4 | 14:00 | Computational Analysis of Electron Injection on Light-Emitting Polymer/Cathode Interface | I. Yamashita, H. Onuma, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, A. Miyamoto | Tohoku Univ. | Japan |
Session A-2 Electric Characterization of Organic Semiconductors (Room 211, 14:45-15:45, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-2-1 (Invited) | 14:45 | Non-Contact Measurement of Charge Carrier Mobility in Inorganic and Organic Semiconductor Materials | S. Seki | Osaka Univ. | Japan |
| A-2-2 | 15:15 | Probing of Transient Electric Field Distribution in ITO/PI/P3HT/Au Using Time-Resolved Second Harmonic Generation Measurement | R. Miyazawa, D. Taguchi, T. Manaka, M. Iwamoto | Tokyo Tech. | Japan |
| A-2-3 | 15:30 | Grain boundary effect on charge transport in pentacene thin films | M. Weis, K. Gmucova, V. Gmucova, D. Hasko, D. Taguchi, T. Manaka, M. Iwamoto | Slovak Academy of Sciences, International Laser Centre, Tokyo Tech. | Slovakia |
Session B-1 Ge MOS Technology 1 (Room 212, 13:00-14:10, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-1-1 (Invited) | 13:00 | Defect-Free GOI (Ge on Insulator) by SiGe Mixing-Triggered Liquid-Phase Epitaxy | M. Miyao | Kyushu Univ. | Japan |
| B-1-2 | 13:30 | Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation | C. H. Lee, T. Nishimura, T. Tabata, S. Wang, K. Nagashio, K. Kita, A. Toriumi | Univ. of Tokyo, JST-CREST | Japan |
| B-1-3 | 13:50 | Nature of Interface Traps in Ge MIS Structures with GeO2 Interfacial Layers | N. Taoka, W. Mizubayashi,Y. Morita, S. Migita, H. Ota, S. Takagi | MIRAI-NIRC, Univ. of Tokyo | Japan |
Session B-2 Ge MOS Technology 2 (Room 212, 14:45-16:05, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-2-1 | 14:45 | Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks | F. I. Alzakia, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi | Univ. of Tokyo, JST-CREST | Japan |
| B-2-2 | 15:05 | Single-Crystalline (100) Ge Stripes with High Mobilities Formed on Insulating Substrates by Rapid-Melting-Growth with Artificial Single-Crystal Si Seeds | K. Toko, T. Sakane, H. Yokoyama, M. Kurosawa, T. Sadoh, M. Miyao | Kyushu Univ. | Japan |
| B-2-3 | 15:25 | Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2 | R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi | Univ. of Tokyo | Japan |
| B-2-4 | 15:45 | GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy (TDS) Analysis | S. K. Wang, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi | Univ. of Tokyo, JST-CREST | Japan |
Session C-1 Low Frequency Noise (Room 213, 13:00-14:20, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-1-1 | 13:00 | Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al2O3/InGaAs Capacitors | Y, Urabe, N. Miyata, T. Yasuda, H. Yamada, M. Hata, N. Taoka, T. Hoshii, M. Takenaka, S. Takagi | AIST, Sumitomo Chemical Co., Ltd., Univ. of Tokyo | Japan |
| C-1-2 | 13:20 | New Insights into Flicker Noise Improvement Mechanism Using Random Telegraph Signal Technique | T. L. Li, S. Y. Huang, B. Hung, C. Y. Tzeng, S. Chou | United Microelectronics Corp. | Taiwan |
| C-1-3 | 13:40 | Drastic reduction of the low frequency noise in Si(100) p-MOSFETs | P. Gaubert, A. Teramoto,R. Kuroda, Y. Nakao,H. Tanaka,T. Ohmi | Tohoku Univ. | Japan |
| C-1-4 | 14:00 | Layout Dependent STI Stress Effect on High Frequency Performance and Flicker Noise in Nanoscale CMOS Devices | K. L. Yeh, C. Y. Ku,J. C. Guo | National Chiao Tung Univ. | Taiwan |
Session C-2 Transport Physics (Room 213, 14:45-16:05, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-2-1 | 14:45 | Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates | T. Mizuno, M. Hasegawa,K. Ikeda, M. Nojiri,T. Horikawa | Kanagawa Univ., MIRAI-NIRC, MIRAI-Toshiba, AIST | Japan |
| C-2-2 | 15:05 | Impact of Transistor Layout Configuration on Current Drive Performance in (100)/<110> and (100)/<100> SiGe channel pMOSFETs: Comparative Study to Si channel | K. Nakatsuka, H. Okamoto, H. Itokawa, K. Okano, T. Izumida, M. Kondo, T. Morooka, I.. Mizushima, A. Azuma, N. Aoki, S. Inaba, Y. Toyoshima | Toshiba Corp. | Japan |
| C-2-3 | 15:25 | Experimental Investigation and Modeling for Surface Roughness Limited Mobility in Strained pMOSFETs | W. P. N. Chen, J. J. Y. Kuo,B. K. Y. Lu, P. Su | National Chiao Tung Univ. | Taiwan |
| C-2-4 | 15:45 | Impact of the Channel Direction Dependent Low Field Hole Mobility on Si(100) | R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi | Tohoku Univ. | Japan |
Session D-1 Nonlinear Optics (Room 221, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-1-1 (Invited) | 13:00 | Roadmap of ultrafast energy-saving optical semiconductor devices to Year 2025 | Y. Ueno | Univ. of Electro-Communications | Japan |
| D-1-2 | 13:30 | Quasi-Phase-Matched Difference Frequency Generation at 3.4 um in High-Quality GaAs/AlGaAs Waveguides | K. Hanashima, I. Ohta,J. Ota, T. Matsushita, T. Kondo, | Univ. of Tokyo | Japan |
| D-1-3 | 13:45 | Experimental Observation of Self-Phase Modulation in ZnO Channel Waveguides | E. Y. Morales Teraoka, D. H. Broaddus, T. Kita, A. Tsukazaki, M. Kawasaki, A. L. Gaeta, H. Yamada, | Tohoku Univ., Cornell Univ., PRESTO, Japan Science and Technology Agency, WPI Advanced Institute for Materials Research, CRESTO, Japan Science and Technology Agency | Japan |
| D-1-4 | 14:00 | Remarkable Enhancement of Optical Kerr Signal by increasing Quality Factor in a GaAs/AlAs Multilayer Cavity | K. Morita, T. Takahashi,T. Kitada, T. Isu | Univ. of Tokushima | Japan |
Session D-2 Advanced Design and Measurement (Room 221, 14:45-15:45, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-2-1 | 14:45 | Time-Resolved Measurements on Sum Frequency Generation Strongly Enhanced in (113)B GaAs/AlAs Coupled Multilayer Cavity | F. Tanaka, T. Takimoto, K. Morita, T. Kitada, T. Isu, | Univ. of Tokushima | Japan |
| D-2-2 | 15:00 | Development of half-cladding semiconductor photonic device structure for surface transmission of light waves | N. Yamamoto, D. Murakami, H. Fujioka, K. Akahane, T. Kawanishi, H. Sotobayashi, H. Takai, | NICT,Tokyo Denki Univ.,Aoyama Gakuin Univ. | Japan |
| D-2-3 | 15:15 | Design Riles and Characterisation of Electrically Pumped VECSELS | D. T. D. childs, J. Orchard, L. C. Lin, B. J. Stevens, D. Williams, R. A. Hogg | Univ. of Sheffield | UK |
| D-2-4 | 15:30 | Programmable optically reconfigurable gate array using a silver-halide holographic memory including six configuration contexts | S. Kubota, M. Watanabe | Shizuoka Univ. | Japan |
Session E-1 DRAM (Room 241, 13:00-14:20, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-1-1 | 13:00 | Performance Improvement of a Novel Capacitor-less 1T-DRAM Based on a Lateral p Type Doped Region | G. Guegan, G. Molas,S. Puget, C. Raynaud | CEA - LETI - Minatec, STMicroelectronics | France |
| E-1-2 | 13:20 | Characterization of junctionless Z-RAM cell | L. Chi-Woo, O. Serguei,N. Mikhail, K. Abhinav, F. Isabelle, A. Nima, R. Pedram, Y. Ran, Y. Ran, C. Jean-Pierre | Tyndall Inst.,Innovative Silicon | Ireland |
| E-1-3 | 13:40 | A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-nm Saddle-Fin Transistor DRAM Technology | S. W. Ryu, C. Sung-Kil, J. Taesu, L. Buyoung, L. Dongmin, Y. Minsoo, C. Seonyong, J. J. Goan, H. Sung-Joo, | Hynix Semiconductor Inc. | Korea |
| E-1-4 | 14:00 | An analysis of Conduction Mechanism and Reliability Characteristics of MIM Capacitor with Single ZrO2 Layer | H. M. Kwon, I.. S. Han,S. U. Park, J. D. Bok,Y. J. Jung,H. S. Shin,C. Y. Kang, B. H. Lee,R. Jammy,H. D. Lee | Univ. of Chungnam National, SEMATECH, GIST | Korea |
Session E-2 Flash Memory I (Room 241, 14:45-16:05, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-2-1 | 14:45 | Improvement of Data Retention in NAND Flash Memory for beyond 3x nm using HTO Liner and IPD Thickness Optimization | J. S. Leem, J. Seo, B. K. Kim, K. S. Kim, H. H. Chang, K. O. Ahn, S. K. Lee, S. J. Hong | Hynix Semiconductor Inc. | Korea |
| E-2-2 | 15:05 | The Operation Algorithm for Improving the Reliability of Triple Level Cell NAND Flash Characteristics | B. Park, D.W. Lee, S. Cho, B. W. Kang, S. Park, M. K. Cho, K. O. Ahn, Y. Koh | Hynix Semiconductor Inc. | Korea |
| E-2-3 | 15:25 | The Evaluation Method and Characteristics of IPD layer in TLC (Triple Level Cell) NAND Flash | B. D. Jo, Y. Jeong, J. Y. Park, P. H. Kim, S. J. Park, M. K. Cho, K. O. Ahn, Y. Koh | Hynix Semiconductor Inc. | Korea |
| E-2-4 | 15:45 | A Low Power and Improving Read Disturb Characteristics by Using Multi-CSL Architecture in MLC NAND Flash Memory | M. Kang, K. T. Park,Y. Song, S. Lee, Y. Lim,K. D. Suh,H. shin, | Seoul National Univ., Samsung Electronics Corp., Ltd.Sungkyunkwan Univ. | Korea |
Session F-1 Graphene Structures and Transport (Room 242, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-1-1 (Invited) | 13:00 | STS Observations of Topological Dirac Fermion on Graphite Surafaces | T. Matsui | Univ. of Tokyo | Japan |
| F-1-2 (Invited) | 13:30 | Electronic Transport Properties in Graphene Nanoribbons and Junctions | K. Wakabayashi | National Institute for Materials Science | Japan |
| F-1-3 | 14:00 | Field-Effect in Multiple Graphene Layer Structures | M. Ryzhii, T. Otsuji,V. Mitin, M. S. Shur, V. Ryzhii, | Univ. of Aizu, Tohoku Univ., J. Sci. Technol. Agency, Univ. at Buffalo,Rensselaer Polytech. Inst. | Japan |
Session F-2 Novel Structures (Room 242, 14:45-16:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-2-1 | 14:45 | Piezoelectric control of coupled vibration in elastically coupled nanomechanical oscillators | H. Okamoto, C. Y. Chang, K. Onomitsu, E. Y. Chang, H. Yamaguchi | NTT Basic Research Labs., National Chiao Tung Univ. | Japan |
| F-2-2 | 15:00 | Ge nanowires for nanoscale nonvolatile memory applications | S. Maikap, S. Majumdar, W. Banerjee, S. Mondal, S. Manna, S. K. Ray | Chang Gung University,Indian Institute of Technology, Kharagpur | Taiwan |
| F-2-3 | 15:15 | Observation of Resistive Switching in ZnO Single Crystal Whiskers | R. Mohan, S.J. Kim | Jeju Nat. Univ. | Korea |
| F-2-4 | 15:30 | Formation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications | C. C. Wang, K. H. Chen,C. Y. Chien, P. W. Li | National Central Univ. | Taiwan |
| F-2-5 | 15:45 | KFM Observation of Single-Electron Filling in Isolated and Clustered Dopants | M. Anwar, D. Moraru,M. Ligowski, T. Mizuno,R. Jablonski,Y. Ono,M. Tabe | Shizuoka Univ., Warsaw Univ. of Tech., NTT Basic Res. Labs. | Japan |
Session G-1 RF Circuits and Systems (1) (Room 243, 13:00-14:10, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-1-1 (Invited) | 13:00 | Evolutions of Transceiver Architectures toward Software-Defined and Cognitive Radios | T. Tsukahara | The University of Aizu | Japan |
| G-1-2 | 13:30 | A 6-10 GHz CMOS Tunable Power Amplifier for Reconfigurable RF Transceivers | J. Y. Hong, D. Imanishi, K. Okada, A. Matsuzawa | Tokyo Inst. of Tech. | Japan |
| G-1-3 | 13:50 | RF Signal Generator Based on Time-to-Analog Converter Using Multi-Ring Oscillators in 90nm CMOS | K. Nakano, S. Amakawa, N. Ishihara, K. Masu | Tokyo Inst. of Tech. | Japan |
Session G-2 RF Circuits and Systems (2) (Room 243, 14:45-16:05, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-2-1 | 14:45 | A 5.4-9.2 GHz 19.5 dB CMOS UWB Receiver Frontend Low Noise Amplifier for Confocal Imaging System | A. Azhari, S. Kubota, A. Toya, N. Sasaki, T. Kikkawa, | Hiroshima Univ | Japan |
| G-2-2 | 15:05 | Confocal Imaging System Using 28.2 Gsample/s UWB Sampling Circuit | A. Toya, N. Sasaki, S. Kubota, T. Kikkawa | Hiroshima Univ. | Japan |
| G-2-3 | 15:25 | Wide-Frequency-Range Low-Noise Injection-locked Ring VCO for UWB Applications in 90 nm CMOS | S. Y. Lee, S. Amakawa, N. Ishihara, K. Masu | Tokyo Institute of Tech. | Japan |
| G-2-4 | 15:45 | A 26GHz Transceiver Chipset for Short Range Radar using Post-Passivation Interconnection | S. Ujita, Y. Kawai, K. Kaibara, N. Negoro, T. Fukuda, H. Sakai, T. Ueda, T. Tanaka | Panasonic Corp. | Japan |
Session H-1 New Functional Materials (Room 244, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-1-1 (Invited) | 13:00 | Let us update the present status of research on magnetic semiconductors | H. Munekata | Tokyo Tech | Japan |
| H-1-2 | 13:30 | In situ Observation of Fe growth on GaAs(001) and InAs(001) by X-ray diffraction | S. Fujikawa, M. Takahasi | JAEA | Japan |
| H-1-3 | 13:45 | Luminescence Characteristics and Annealing Effect of Tb-doped AlBNO Films for Inorganic Electroluminescence Devices | K. Masumoto, A. Semba, C. Kimura, T. Taniguchi, K. Watanabe, H. Aoki | Osaka Univ., National Inst. for Materials Sci. | Japan |
| H-1-4 | 14:00 | Influence of Nitrogen Doping on the LaAlO Film Properties | M. Honjo, N. Komatsu,C. Kimura, H. Aoki | Osaka Univ. | Japan |
Session H-2 Growth of Graphene for Electronics Applications (Room 244, 14:45-16:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-2-1 (Invited) | 14:45 | Towards Industrial Applications of Graphene Electrodes | B. H. Hong | Sungkyunkwan Univ. | Korea |
| H-2-2 | 15:15 | Uniformity of Graphene CVD Growth Depending on the Thickness and Domain Structure of Epitaxial Metal Films | S. Yoshii, K. Nozawa,K. Toyoda, N. Matsukawa | Panasonic Corp. | Japan |
| H-2-3 | 15:30 | Synthesis of High Quality Graphene Using Diamond-Like Carbon (DLC) as Solid Carbon Source | B. Liu, G. Han, M. C. Yang, Q. Zhou, S. M. Koh, Y. C. Yeo | National University of Singapore (NUS),Data Storage Institute | Singapore |
| H-2-4 | 15:45 | TEM characterization of epitaxial graphene formed on Si(111), Si(110), Si(100) | H. Handa, R. Takahashi, S. Abe, K. Imaizumi, M. H. Jung, S. Ito, H. Fukidome, M. Suemitsu | Tohoku Univ., CREST-JST | Japan |
Session I-1 III-V High Speed and High Frequency Transistors (Room 245, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-1-1 (Invited) | 13:00 | Adding Value to CMOS through Heterogeneous Integration | Y. Royter | HRL Laboratories, LLC | USA |
| I-1-2 | 13:30 | InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer | T. Kanazawa, R. Terao, Y. Yamaguchi, S. Ikeda, Y. Yanai, Y. Miyamoto | Tokyo Tech | Japan |
| I-1-3 | 13:45 | Source/Drain Engineering for In0.7Ga0.3As N-MOSFETs: Raised Source/Drain with In Situ Doping for Series Resistance Reduction | X. Gong, H. C. Chin, S.M. Koh, L. Wang, Ivana, Z. Zhu, B. Wang, C.K. Chia, Y.C. Yeo, | National Univ. of Singapore,Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. | Singapore |
| I-1-4 | 14:00 | A sub 350C GaSb pMOSFET with ALD high-k dielectric | A. Nainani, T. Irisawa, Y. Sun, F. Crnogorac, K. Saraswat, | Standford Univ. | USA |
Session I-2 GaN HEMTs (Room 245, 14:45-16:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-2-1 (Invited) | 14:45 | Integration Technologies for GaN Power Transistors | T. Ueda | Panasonic Corp. | Japan |
| I-2-2 | 15:15 | High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator | A. M. H. Kwan, K. Y. Wong, X. Liu, K. J. Chen | Hong Kong Univ. of Sci. and Tech. | Hong Kong |
| I-2-3 | 15:30 | Suppression of gate leakage and enhancement of breakdown voltage using Al2O3 nano particles as gate dielectric for AlGaN/GaN MOS-HEMTs | J. Freedsman, T. Kubo, A. Watanabe, S. L. Welvaraj, T. Egawa, | Nagoya Inst. of Tech. | Japan |
| I-2-4 | 15:45 | In situ Silane Surface Passivation for Gate-First Undoped AlGaN/GaN HEMTs with Minimum Current Collapse and High-Permittivity Dielectric | X. Liu, H. C. Chin, E. D. F. Low, W. Liu, L. S. Tan, Y. C. Yeo | National University of Singapore, Institute of Materials Research and Engineering, Agency for Science Technology and Research | Singapore |
Session J-1 Carbon Nanotube Devices (Room 246, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-1-1 (Invited) | 13:00 | Synthesis and dry depositon of SWCNT networks for flexible, transparent conductors and field effect transistors | E. I. Kauppinen | Aalto University, Department of Applied Physics | FINLAND |
| J-1-2 | 13:30 | Characterization of Carbon Nanotube Thin Film Transistors by Scanning Probe Microscopy | Y. Okigawa, Y. Ohno, S. Kishimoto, T. Mizutani | Nagoya Univ. | Japan |
| J-1-3 | 13:45 | Study on Device Parameters of Carbon Nanotube FETs to Realize Steep Subthreshold Slope of less than 60 mV/decade | B. P. Algul, T. Kodera,S. Oda, K. Uchida | Tokyo Ins. of Tech., QNERC | Japan |
| J-1-4 | 14:00 | Metal-Catalyst-Free Growth of Carbon Nanotubes for CMOS Integration | T. Uchino, G. N. Ayre, D. C. Smith, J. L. Hutchison, C. H. de Groot, P. Ashburn | Univ. of Southampton, Univ.of Oxford | UK |
Session J-2 Carbon Nanotube Properties and Transport (Room 246, 14:45-16:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-2-1 | 14:45 | Single Wall Carbon Nanotube Growth from Boron- and Nitrogen-Containing Feedstocks | S. Suzuki, H. Hibino | NTT Corp. | Japan |
| J-2-2 | 15:00 | Transient thermal response of an individual carbon nanotube | Y. Ohshima, T. Arie,S. Akita | Osaka Prefecture Univ. | Japan |
| J-2-3 | 15:15 | Doubly-suspended carbon nanotube resonator for ultrasensitive mass measurement | K. Oda, T. Arie,S. Akita | Osaka Prefecture Univ., CREST-JST | Japan |
| J-2-4 | 15:30 | Electronic transport of single-wall carbon nanotubes with superconducting contacts | M. Shimizu, H. Akimoto, K. Ishibashi | RIKEN, Tokyo Univ. of Science | Japan |
Session K-1 Modelinf of Power LDMOSFE (Room 222, 13:00-14:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-1-1 | 13:30 | Multi-fingered LDMOS thermal analysis based on a distributed thermal network | S. Hniki, G. Bertrand, A. Canepari, M. Minondo, H. Jaouen, F. Morancho | STMicroelectronics,CNRS-LAAS, Universite de Toulouse | France |
| K-1-2 | 13:45 | Modeling of RESURF LDMOS for Accurate Prediction of Junction Condition on Device Characteristics | T. Saito, T. Tanaka, T. Hayashi, K. Kikuchihara, T. Kanamoto, H. Masuda, M. Miyake, S. Amakawa, H. J. Mattausch, M. Miura-Mattausch | Renesas Electronics Corp., Hiroshima Univ. | Japan |
Session K-2 Power Module Technology (Room 222, 14:45-15:45, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-2-1 (Invited) | 14:45 | “High Performance Silicon Carbide Power Modules for Extreme Environment Applications” | A. B. Lostetter | Arkansas Power Electronics International, Inc. | USA |
| K-2-2 (Invited) | 15:15 | Reliability estimation of power modules using advanced electro-thermal modeling techniques | P. Mawby | School of Engineering, University of Warwick, UK | UK |
Session L-1 Biosensors (Room 223, 13:00-14:15, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| L-1-1 (Invited) | 13:00 | Detection of biomolecular recognition using bio-transistors | Y. Miyahara | National Institute for Materials Science | Japan |
| L-1-2 | 13:30 | Sensitivity Improvement of Biosensors Using Si Ring Optical Resonators | M. Fukuyama, Y. Amemiya, Y. Abe, Y. Onishi, A. Hirowatari, K. Terao, T. Ikeda,A. Kuroda,S. Yokoyama | Hiroshima Univ. | Japan |
| L-1-3 | 13:45 | Fast DNA sequencing with nanopore-embedded graphene electrodes | Y. He, R. H. Scheicher, A. Grigoriev, R. Ahuja, S. Long, Z. Ji, Z. Yu, M. Liu | Laboratory of nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University,Applied Materials Physics, Department | China |
| L-1-4 | 14:00 | Poly Crystalline Silicon Nanowire Field-Effect Transistor for Real-Time Detection of Influenza Virus DNA | C. Y. Hsiao, W. T. Lai, M. P. Lu, Y. S. Yang | National Chiao Tung Univ, National Nano Device Labs. | Taiwan |
Session L-2 Silicon Bansed Biomedical Devices (Room 223, 14:45-16:00, September 22) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| L-2-1 (Invited) | 14:45 | Advanced Silicon Integration Technologies for Lab-on-chip and Implantable Device Applications | C. Van Hoof | IMEC | Belgium |
| L-2-2 | 15:15 | Electronic immunochromatography embedding RFID sensor | Y. Yazawa, C. Gouda, A. Shiratori, T. Oonishi, K. Watanabe, K. Uchida | Hitachi, Ltd. | Japan |
| L-2-3 | 15:30 | Highly Accurate Optical Stimulation of Neuron using Si Neural Probe with Optical Waveguide | R. Kobayashi, S. Lee, S. Kanno, Y. Yukita, K. Lee, T. Fukushima, T. Ishizuka, H. Mushiake, H. Yao, M. Koyanagi, T. Tanaka | Tohoku Univ. | Japan |
| L-2-4 | 15:45 | Fabrication and in vivo Evaluation of High Performance Stimulus Electrodes Employed in a CMOS Chip for Retinal Prosthesis | T. Noda, S. Tomimatsu, K. Sasagawa, T. Tokuda, Y. Terasawa, K. Nishida, T. Fujikado, T. Fujikado | NAIST, NIDEK Co., Ltd., Osaka Univ. | Japan |