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Session A-3 Organic Light Emitting Diodes (Room 211, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-3-1 | 9:00 | Improved the power efficiency of white phosphorescent organic light-emitting diode with thin double emitting-layers and hole-trapping mechanism | F. S. Juang, S. H. Wang, Y. S. Tsai, M. H. Gao, Y. Chi, H. P. Shieh | National Formosa Univ., National Tsing Hua Univ., National Chiao Tung Univ. | Taiwan |
| A-3-2 | 9:15 | Current Density Dependence of Transient Properties in Green Phosphorescent Organic Light-Emitting Diodes | H. Kajii, N. Takahota, Y. Wang, Y. Ohmori | Osaka Univ. | Japan |
| A-3-3 | 9:30 | High efficiency phosphorescent organic light-emitting diode by incorporating an electron transport material into emitting layer | F. S. Juang, S. H. Wang, Y. H. Tsai, B. S. Hsieh, Y. Chi,H. P. Shieh | National Formosa Univ., National Tsing Hua Univ., National Chiao Tung Univ. | Taiwan |
| A-3-4 | 9:45 | Enhancing Efficiency of Organic Light-Emitting Diodes Using a CsI-Doped Electron Transporting Layer | T. W. Kuo, S. H. Su, C. M. Su, M. Yokoyama | I-Shou Univ. | Taiwan |
| A-3-5 | 10:00 | Maskless Patterning of Vapor-Deposited Photosensitive Film and its Application to Organic Light-Emitting Diodes | M. Muroyama, W. Saito, S. Yokokura, K. Tanaka, H. Usui | Tokyo Univ. | Japan |
| A-3-6 | 10:15 | Direct Probing of Carrier Behavior in Electroluminescence IZO/α-NPD/Alq3/LiF/Al Diode by Time-Resolved Optical Second-Harmonic Generation | D. Taguchi, L. Zhang, J. Li, T. Manaka, M. Iwamoto | Tokyo Tech. | Japan |
Session A-4 Organic Memory and Related Materials (Room 211, 15:10-16:25, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-4-1 (Invited) | 15:10 | Non-Volatile Mplecular Memory nano-interfaced with organic molecules | H. Lee | Sungkynkwan Univ. | Korea |
| A-4-2 | 15:40 | The dry etching process for patterning P(VDF-TeFE) thin film with various conditions | D. Terashima, J. Jeong, C. Kimura, H. Aoki | Osaka Univ. | Japan |
| A-4-3 | 15:55 | The influence of the intensity of an electric field on properties of P(VDF-TeFE)thin films during the annealing process | J. H. Jeong, D. Terashima, C. Kimura, H. Aoki | Osaka Univ. | Japan |
| A-4-4 | 16:10 | Carrier Transport in Electrical Bistable Device based on Hyperbranched Polymer and Gold Nanoparticle Composite Thin Films | H. ICHIKAWA, Y. KEI,M. OZAWA, K. ODOI,K. FUJITA | Kyushu Univ., Nissan Chemical Indus. Ltd. | Japan |
Session A-5 Organic Electronics and Device Physics (Room 211, 16:50-17:35, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-5-1 | 16:50 | Surface Manipulation of Precursor Carbazole Dendron Polymer Thin Films by Conducting-AFM Nanolithography | A. Baba, R. Oyanagi, T. Mashima, Y. Ohdaira, K. Shinbo, K. Kato, F. Kaneko, G. Jiang, R. Advincula | Niigata Univ., University of Houston | Japan |
| A-5-2 | 17:05 | Computational Study of Electronic States around Defects in Organic Semiconductors | T. Shimada, M. Ohtomo, T. Yanase, T. Hasegawa | Hokkaido Univ., Tokyo Univ. | Japan |
| A-5-3 | 17:20 | Preparation of a Hybrid Sensor of Surface Plasmon Resonance and Quartz Crystal Micorobalance by Using Imprinted Grating Structure | K. Shinbo, K. Kuroki, Y. Tesuma, Y. Ohdaira, A. Baba, K. Kato, F. Kaneko | Niigata Univ. | Japan |
Session B-3 High-k Gate Stack (Room 212, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-3-1 (Invited) | 9:00 | Atomic mechanism of Flat band voltage shifts by Oxide dipole Layers in High K-Metal Gate Stacks | J. Robertson | Cambridge Univ. | UK |
| B-3-2 | 9:30 | Oxygen vacancy mobility and diffusion coefficient determined from current measurements in SiO2/HfO2/TiN stacks | S. Zafar, H. Jagannathan, L. F. Edge, D. Gupta | IBM | USA |
| B-3-3 | 9:50 | Fermi-Level Pinning and NBTI Free of CMOS HfO2 By Pre-CF4 Plasma Passivation | H. H. Chiu, C. S. Lai, J. C. Wang | Chang Gung Univ. | Taiwan |
| B-3-4 | 10:10 | Enhanced Electrical Uniformity and Breakdown of Multi-Step Deposited and Annealed HfSiO-Insight by Scanning Tunneling Microscopy | K. S. Yew, D. S. Ang, K. L. Pey, G. Bersuker, P. S. Lysaght, D. Heh | Nanyang Tech. Univ., SEMATECH | Singapore |
Session B-4 Process Integration (Room 212, 15:10-16:20, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-4-1 (Invited) | 15:10 | High-k/Metal Gate Technology for 22nm Generation and Beyond | M. Takayanagi | Toshiba America Electronic Components, Inc. | USA |
| B-4-2 | 15:40 | Analytical Approach for Enhancement of nMOSFET Performance with Si:C Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing | T. Yamaguchi, Y. Kawasaki, T. Yamashita, N. Miura, M. Mizuo, J. Tsuchimoto, K. Eikyu, K. Maekawa, M. Fujisawa, K. Asai | Renesas Electonics Corp. | Japan |
| B-4-3 | 16:00 | Mechanism to Achieve PMOS and NMOS Band Edge Work Function using Low Temperature Tuning Process for Low Power Application | C. S. Park, G. Bersuker, T. Ngai, J. Huang, K. H. Lin, J. Barnett, J. Price, K. Rader, P. Lysaght, B. Taylor, P. D. Kirsch, R. Jammy | SEMATECH,UMC | USA |
Session B-5 Advanced Gate Dielectries (Room 212, 16:50-18:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-5-1 | 16:50 | Asymmetric Gate-oxide Thickness Four-terminal FinFETs Fabricated using Low-Temperature and Atomically Flat interface Neutral-Beam Oxidation Process | A. Wada, K. Endo, M. Masahara, S. Samukawa | Tohoku Univ., AIST | Japan |
| B-5-2 | 17:10 | Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO2/Si MOSFETs | N. Miyata, H. Ishii, T. Itatani, T. Yasuda | AIST | Japan |
| B-5-3 | 17:30 | Robust Ultra-violet (UV) Analysis Technique for Band Diagram Extraction of Al/HfGdO/SiO2/p-Si Structure with Different Hf/Gd Dual-sputtered Ratio | P. C. Chou, J. C. Wang, C. S. Lai, J. Y. Lin, W. C. Chang, K. T. Chen, Y. C. Chung,Y. H. Lin, I. T. Wang,C. I. Wu, P. S. Wang | Chang Gung Univ., National Taiwan Univ. | Taiwan |
| B-5-4 | 17:50 | Stability origin of metastable higher-k phase HfO2 at room temperature | Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, A. Toriumi | Univ. of Tokyo | Japan |
Session C-3 Tunnel & Schottky-S/D FETs (Room 213, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-3-1 (Invited) | 9:00 | Tunnel FET Promise and Challenges | T. J. K. Liu | Univ. of California Berkeley | USA |
| C-3-2 | 9:30 | Optimization of Silicon ρ-channel Tunnel FET with Dual κ Spacer | H. Virani, S. Gundapaneni, A. Kottantharayil | Indian Inst. of Tech. | India |
| C-3-3 | 9:50 | Drive Current Improvement in Si Tunnel Field Effect Transistors by means of Silicide Engineering | D. Leonelli, A. Vandooren, R. Rooyackers, A. Verhulst, S. De Gendt, M. Heyns, G. Groeseneken | IMEC, Katholieke Univ. Leuven | Belgium |
| C-3-4 | 10:10 | Metal Schottky S/D Technology of Ultra Thin SOTB (Silicon on Thin Box) MOSFET | A. Shima, N. Sugii,N. Mise, D. Hisamoto,K. Takeda, K. Torii | Hitachi, Ltd. | Japan |
Session C-4 Tr & SRAM Variabilities (Room 213, 15:10-16:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-4-1 | 15:10 | Effective Suppression of Random-Dopant-Induced Characteristic Fluctuation Using Dual Material Gate Technique for 16 nm MOSFET Devices | K. F. Lee, Y. Li,C. Y. Yiu, T. T. Khaing | National Chiao Tung Univ. | Taiwan |
| C-4-2 | 15:30 | High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs | T. Tsunomura, A. Kumar, T. Mizutani, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto, T. Mogami | MIRAI-Selete, Univ. of Tokyo, Hiroshima City Univ. | Japan |
| C-4-3 | 15:50 | Device Engineering to Improve SRAM Static Noise Margin | J. Luo, L. Wei,F. Boeuf, D. Antoniadis, T. Skotnicki, H. S. P. Wong | Stanford Univ., STMicroelectronics, MIT | USA |
Session C-5 Si Nanowire Technology (Room 213, 16:50-18:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-5-1 | 16:50 | Fully Quantum Study of Silicon Devices with Scattering Based on Wigner Monte Carlo Approach | S. Koba, R. Aoyagi, H. Tsuchiya, | Kobe Univ. | Japan |
| C-5-2 | 17:10 | Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications | J. L. Huguenin, S. Monfray, G. Bidal, S. Denorme, P. Perreau, N. Loubet, Y. Campidelli, M. P. Samson, C. Arvet, K. Benotmane, F. Leverd, P. Gouraud, B. Le-Gratiet, C. De-Butet, L. Pinzelli, R. Beneyton, S. Barnola, T. Morel, A. Halimaoui, F. Boeuf, G. Ghibaudo, T. Skotnicki | STMicroelectronics, IMEP, CEA-LETI | France |
| C-5-3 | 17:30 | Heavily-Doped Poly-Si Gate and Epi-First Source/Drain Extension Technique in Strained Si Nanowire MOSFETs with Reduced Papasitic Resistance | Y. Nakabayashi, M. Saitoh, T. Ishihara, T. Numata, K. Uchida, J. Koga | Toshiba Corp., Tokyo Inst. of Tech. | Japan |
| C-5-4 | 17:50 | Low GIDL and Its Physical Origins in Si Nanowire Transistors | K. Zaitsu, M. Saitoh, Y. Nakabayashi, T. Ishihara, T. Numata, | Toshiba Corp. | Japan |
Session D-3 GaN LED (Room 221, 9:00-10:45, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-3-1 | 9:00 | InGaN-based Blue Light-Emitting Diodes with Electron Blocking Layer Fabricated on Patterned Sapphire Substrates | K. T. Liu, C. K. Hsu, S. J. Chang, | Univ. of Cheng Shiu, National Cheng Kung Univ. | Taiwan |
| D-3-2 | 9:15 | Enhanced Light Output of Vertical GaN-Based Light-Emitting Diodes with a Distributed Bragg Reflector and a Roughened GaOx Surface Film | W. C. Lee, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, P. H. Wang, S. J. Wang, | National Cheng Kung Univ., WuFeng Inst. of Tech. | Taiwan |
| D-3-3 | 9:30 | Epitaxial-Lateral-Overgrowth of Gallium Nitride for Embedding the Micro-Mirror Array | H. M. Ku, C. Y. Huang, C. Z. Liao, S. Chao | National Tsing Hua Univ., Indus. Tech. Res. Inst. | Taiwan |
| D-3-4 | 9:45 | High performance GaN-based light emitting diodes grown on 4-inch Si (111) | Y. Zhu, A. Watanabe,L. Lu, Z. Chen,T. Egawa, | Nagoya Inst. Of Tech. | Japan |
| D-3-5 | 10:00 | GaN based Light Emitting Diode with Enhanced Optical Output and Improved Luminescence by employing Excimer Laser Irradiation in contact formation | G. H. Wang, T. Sudhiranjan, T. C. Wong, X. Wang, H. Y. Zheng, T. K. Chan, T. Osipowicz, Y. L. Foo | Inst. Of Materials Res. And Eng.,Singapore Inst. Of Manufacturing Tech., National Univ. of Singapore | Singapore |
| D-3-6 | 10:15 | Light Emission Enhancement of GaN-Based Photonic Crystal With Ultraviolet AlN/AlGaN Distributed Bragg Reflector | C. C. Chen, J. R. Chen, Y. C. Yang, M. H. Shih, H. C. Kuo, | National Chiao Tung Univ., RCAS | Taiwan |
| D-3-7 | 10:30 | Light Output Enhancement of Ultraviolet Light Emitting Diodes with Pattern HfO2/SiO2 Distributed Bragg Reflector | B. S. Cheng, C. H. Chiu, M. H. Lo, H. C. Kuo, T. C. Lu,Y. J. Cheng, S. C. Wang, | National Chiao Tung Univ., Academia Sinica | Taiwan |
Session D-4 Photonic Crystal Devices (Room 221, 15:10-16:25, September 23) |
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| D-4-1 (Invited) | 15:10 | Information processing and sensing with photonic crystal microcavities in SOI | P. M. Fauchet | Univ. of Rochester | USA |
| D-4-2 | 15:40 | Pulse selection by on-the-fly wavelength conversion in 2D photonic crystals | T. Asano, J. Upham, Y. Tanaka, S. Noda | Kyoto Univ. | Japan |
| D-4-3 | 15:55 | Demonstration of a Silicon photonic Crystal Slab LED with Efficient Electroluminescence | S. Nakayama, S. Iwamoto, S. Ishida, Y. Arakawa | Univ. of Tokyo | Japan |
| D-4-4 | 16:10 | Optimized Micro-Cavity and Photonic Crystal in GaN-based Thin-Film Light-Emitting Diodes for Highly Directional Beam Profiles | C. F. Lai, C. H. Chao, W. Y. Yeh, | Industrial Technology Research Institute | Taiwan |
Session D-5 Quantum Dot (Room 221, 16:50-17:35, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-5-1 | 16:50 | Light emission from a strongly coupled single quantum dot-photonic crystal nanobeam cavity system | R. Ohta, Y. Ota, M. Nomura, N. Kumagai, S. Ishida, S. Iwamoto, Y. Arakawa, | Univ. of Tokyo | Japan |
| D-5-2 | 17:05 | Excited State Bilayer Quantum Dot Lasers at 1.3μm | M. A. Majid, D. T. D. Childs, H. Shahid, K. Kennedy, R. Airey, R. A. Hogg, E. Clarke, P. Spencer, R. Murray, | Univ. of Sheffield, Imperial College | UK |
| D-5-3 | 17:20 | A tunnel injection structure for speeding up carrier dynamics in InAs/GaAs quan-tum dots using a GaNAs quantum-well injector | C. Y. Jin, S. Ohta, M. Hopkinson, O. Kojima, T. Kita, O. Wada | Kobe Univ., Univ. of Sheffield | Japan |
Session E-3 Flash Memory II (Room 241, 9:00-10:45, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-3-1 (Invited) | 9:00 | Current Development Status and Future Challenges of Charge-Trapping NAND Flash | H. T. Lue | Macronix International Co., Ltd. | Taiwan |
| E-3-2 | 9:30 | Collective Tunneling Model in Charge Trap Type NVM Cell | M. Muraguchi, Y. Sakurai,T. Yukihiro, S. Yasuteru,I.. Mitsuhisa, M. Katsunori,M. Seiichi, N. Shintaro,S. Kenji, E. Tetsuo | Tohoku Univ., Univ. of Tsukuba, Hiroshima Univ., Univ. of Hyogo | Japan |
| E-3-3 | 9:50 | Bandgap Engineered Nanowire (BEN) SONOS NAND Flash Memory | J. G. Yun, D. W. Kwon, J. H. Lee, H. Shin, B. G. Park, | Seoul National Univ., Samsung Electronics Corp., Ltd. | Korea |
| E-3-4 | 10:10 | Atomistic Design of Guiding Principles for High Quality MONOS Memories-First Principles Study of H and O Incorporation Effects for N Vacancies in SiN Charge Trap Layers- | K. Yamaguchi, A. Otake, K. Shiraishi, | Univ. of Tsukuba | Japan |
| E-3-5 | 10:30 | Dynamics of the Charge Centroid in MONOS Memory Cells during Avalanche Injection and FN Injection Based on Incremental-Step-Pulse-Programming | J. Fujiki, T. Haimoto, N. Yasuda, M. Koyama | TOSHIBA Corp. | Japan |
Session E-4 Flash Memory III (Room 241, 15:10-16:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-4-1 | 15:10 | Y-disturb Study of Charge-trapping Type Non-volatile Memory Cell for 45nm Generation Node | T. F. Ou, C. H. Cheng, W. C. Tzeng, G. D. Lee, S. H. Ku,C. H. Liu, K. W. Liu, N. K. Zous, W. J. Tsai, S. W. Huang, M. S. Chen,W. P. Lu, K. C. Chen,C. Y. Lu | Ltd. of Macronix | Taiwan |
| E-4-2 | 15:30 | In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device | J. K. Park, | KAIST | Korea |
| E-4-3 | 15:50 | POST-BREAKDOWN RECOVERABLE METAL NANOCRYSTAL-BASED AL2O3/SIO2GATE STACK FOR NON-VOLATILE MEMORY | C.Yi Ning, P. Kin Leong, G. Kuan Eng Johnson, L. Zin Zar, S. Pawan, M. Souvik, W. Qing Xaio, Z. Jie | Nanyang Tech. Univ., Inst.of Material Res.and Eng., Indian Inst.of Tech.,GlobalFoundries Singapore Pte. Ltd | Singapore |
Session E-5 Flash Memory IV (Room 241, 16:50-17:30, September 23) |
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| E-5-1 | 16:50 | Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory Device | W. Kim, D. W. Kwon, J. H. Ji, J. H. Lee, B. G. Park, | Seoul National Univ. | Korea |
| E-5-2 | 17:10 | Band Energy Engineered Metal Nanodots Nonvolatile Memory to Achieve Long Retention Characteristics | T. Hiraki, Y. Pei, T. Kojima, J. C. Bea, H. Kino, M. Koyanagi, T. Tanaka, | Tohoku Univ. | Japan |
Session F-3 Spin Manipulation and Photon Detection (Room 242, 9:00-10:45, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-3-1 (Invited) | 9:00 | Quantum media conversion from a photon to an electron spin | H. Kosaka | Tohoku Univ. | Japan |
| F-3-2 | 9:30 | Spin-relaxation Dynamics of Excited Trion States in an InAs Quantum Dot | Y. Igarashi, M. Shirane, Y. Ota, M. Nomura, N. Kumagai, S. Ohkouchi, A. Kirihara, S. Ishida, S. Iwamoto, S . Yorozu, Y. Arakawa | NEC Corp., INQIE, Univ. of Tokyo | Japan |
| F-3-3 | 9:45 | Single-Photon Detection by Individual Dopants and the Effect of Channel Shape in SOI-FET | A. Udhiarto, D. Moraru, R. Nakamura, S. Miki, T. Mizuno,V. Mizeikis, M. Tabe | Univ. of Shizuoka, Univ. of Shizuoka | Japan |
| F-3-4 | 10:00 | Spin Resonant Tunneling through Quantum Dots with Engineered g-factors | S. M. Huang, Y. Tokura, H. Akimoto, K. Kono, J. J. Lin, S. Tarucha, K. Ono | Low temperature physics lab., RIKEN, Inst. of Physics, National Chiao Tung Univ., NTT basic research lab., NTT, Quantum spin information project, ICORP-JST, Univ. of Tokyo | Japan |
| F-3-5 | 10:15 | Coherent Manipulation and Bi-Directional Polarization of Nuclear Spins in a Quantum Dot Device | R. Takahashi, K. Kono, S. Tarucha, K. Ono | Tokyo Tech, RIKEN, Univ. of Tokyo, ICORP-JST, CREST-JST | Japan |
| F-3-6 | 10:30 | Transmission Characteristics of a Quantum Point Contact for Edge Magnetoplasmons | K. Washio, M. Hashisaka, H. Kamata, K. Muraki, T. Fujisawa | Tokyo Tech, NTT Basic Res. Labs. | Japan |
Session F-4 Quantum Dots (Room 242, 15:10-16:25, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-4-1 (Invited) | 15:10 | "Silicon Quantum Dots and Donors for Quantum Information Processing" | A. S. Dzurak | Univ. of New South Wales | Australia |
| F-4-2 | 15:40 | Simulation study of charge modulation in coupled quantum dots in silicon | T. Kambara, T. Kodera, G. Yamahata, K. Uchida, S. Oda | Tokyo Tech, Univ. of Tokyo | Japan |
| F-4-3 | 15:55 | Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically | M. A. Sulthoni, T. Kodera, K. Uchida, S. Oda | QNERC Tokyo Institute of Technology, Tokyo Tech | Japan |
| F-4-4 | 16:10 | Single Electron Transistors (SETs) for Reducing Source/Drain Resistance and MOS Current | J. E. LEE, W. B. Shim, J. G. Yun, K. C. Kang, J. H. Lee, H. Shin, B. G. Park | Seoul National Univ. | Korea |
Session F-5 New Functional MOS Structures (Room 242, 16:50-18:05, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-5-1 | 16:50 | Three Dimensional Floating Gate Memory with Multi-layered Nanodot Array Formed by Bio-LBL | K. Ohara, B. Zheng, M. Uenuma, I. Yamashita,Y. Uraoka | NAIST, CREST-JST | Japan |
| F-5-2 | 17:05 | Switching voltage reduction of resistance switching memory using Si/CaF2/CdF2 quantum-well structures | M. Watanabe, Y. Nakashouji, K. Tsuchiya | Tokyo Tech | Japan |
| F-5-3 | 17:20 | Time dependent analysis of the applied voltage operation for ensuring 10-year lifetime with SiN MOSFET noise source device | M. Matsumoto, T. Tanamoto, S. Yasuda, R. Ohba, S. Fujita | Toshiba Corp. | Japan |
| F-5-4 | 17:35 | Strong Stark effect of electroluminescence in thin SOI MOSFETs | J. Noborisaka, K. Nishiguchi, Y. Ono, H. Kageshima,A. Fujiwara | NTT Corp. | Japan |
| F-5-5 | 17:50 | Drive Current Enhancement with Invasive Source in Double Gate Tunneling Field-Effect Transistors | Y. Yang, P. F. Guo, G. Q. Han, C. L. Zhan, L. Fan, Y. C. Yeo | National Univ. of Singapore | Singapore |
Session G-3 Modeling, Variation and Reliability (Room 243, 9:00-10:50, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-3-1 (Invited) | 9:00 | A Practical Modeling Solution for the Nanodevices with Strain Engineering | C. S. Yeh | UMC | Taiwan |
| G-3-2 | 9:30 | Analysis of Within-Die and Die-to-Die CMOS-Process Variation With Reconfigurable Ring-Oscillator Arrays | T. Ansari, W. Imafuku, A. Kawabata, M. Yasuda, T. Koide, H. J. Mattausch | Hiroshima Univ. | Japan |
| G-3-3 | 9:50 | Large Scale Test Circuits for Systematic Evaluation of Variability and Noise of MOSFETs’ Electrical Characteristics | Y. Kumagai, K. Abe, T. Fujisawa, S. Watabe, R. Kuroda, N. Miyamoto, T. Suwa, A. Teramoto, S. Sugawa, T. Ohmi | Tohoku Univ. | Japan |
| G-3-4 | 10:10 | A 65nm CMOS 400ns Measurement Delay NBTI-Recovery Sensor by Minimum Assist Circuit | T. Matsumoto, H. Makino, K. Kobayashi, H. Onodera | Kyoto Univ., Kyoto Inst. Of Tech., CREST-JST | Japan |
| G-3-5 | 10:30 | Prediction of Circuit Degradation with Transient BTI and HC Simulations | D. Hagishima, T. Ishihara, K. Matsuzawa, K. Masuda | Toshiba Corp. | Japan |
Session G-4 Advanced Analog Circuits (Room 243, 15:10-16:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-4-1 | 15:10 | A Gate-drain Coupling Distributed Amplifier in 90-nm CMOS Technology | C. Y. Hsiao, W. B. W. Wang, T. Y. Su, Y. C. Wu, S. S. H. Hsu, | National Tsing Hua Univ. | Taiwan |
| G-4-2 | 15:30 | A 60dB SFDR Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems | K. Sueishi, T. Yoshida, Iwata, K. Matsushita, Hirata, . Suzuki | Hiroshima Univ., A-R-Tech Corp., Osaka Univ., Univ. of Tokyo | Japan |
| G-4-3 | 15:50 | Temperature Compensated Nano-Ampere CMOS Current Reference Circuit Using Small Offset Voltage | Y. Osaki, T. Hirose, N. Kuroki, M. Numa | Kobe Univ. | Japan |
Session G-5 Integrated MEMS/Bio Sensors (Room 243, 16:50-18:05, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-5-1 (Invited) | 16:50 | The Integrated CMOS-MEMS Technology and its Application. | K. Machida | NTT AT | Japan |
| G-5-2 | 17:20 | Polarization Analyzing Image Sensor with Monolithically Embedded Polarizer using 65nm CMOS Process | S. Shishido, T. Noda, K. Sasagawa, T. Tokuda, J. Ohta | NAIST | Japan |
| G-5-3 | 17:35 | Design and Fabrication of Smart All-in-one Chip for Electrochemical Measurement | T. Yamazaki, T. Ikeda, M. Ishida, K. Sawada | Toyohashi Univ. of Tech., HIOKI E.E. E. Corp., JST, CREST | Japan |
| G-5-4 | 17:50 | Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging: Circuit and Microelectrode Design Considerations | J. Hasegawa, S. Uno, K. Nakazato | Nagoya Univ. | Japan |
Session H-3 Oxides and Nanowires (Room 244, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-3-1 | 9:00 | Crack-Free Epitaxial ZnO film on Si(111) with Gd2O3(Ga2O3) buffer layer | B. H. Lin, W. R. Liu, C. C. Kuo, C. H. Hsu, W. F Hsieh,M. Hong, J. Kwo, | National Chiao Tung Univ., National Synchrotron Radiation Research Center, National Cheng Kung Univ., National Tsing Hua Univ. | Taiwan |
| H-3-2 | 9:15 | Optical properties of ZnO/Au core/shell nano-tips | Y. H. Ko, J. S. Yu | Kyung Hee Univ. | Korea |
| H-3-3 | 9:30 | Conductance of Zinc Oxide Nanocontacts Studied by In Situ Transmission Electron Microscopy | T. Kase, T. Kizuka | Univ. of Tsukuba | Japan |
| H-3-4 | 9:45 | The Role of Aluminum Catalyst Atoms in Shaping the Structural and Electrical Properties of Epitaxial Silicon Nanowires | O. Moutanabbir, S. Senz, M. Alexe, Y. Kim, R. Scholz,H. Blumtritt, C. Wiethoff,T. Nabbefeld, F. J. Meyer zu Heringdorf, M. Horn-von Hoegen, D. Isheim, D. N. Seidman | Max Planck Institute of Microstructure Physics, Univ. Duisburg-Essen,Northwestern Univ. | Germany |
| H-3‐5 | 10:00 | Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy | S. Fujisawa, T. Sato, S. Hara, J. Motohisa, K. Hiruma, T. Fukui | Hokkaido Univ. | Japan |
| H-3-6 | 10:15 | Fabrication of Rectifying Pt/TiOx/Pt by RF-Magnetron Sputtering | N. Zhong, H. Shima, H. Akinaga, | AIST,CREST-JST | Japan |
Session H-4 Carbon Interconnect (Room 244, 15:10-16:20, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-4-1 (Invited) | 15:10 | Thermal Transport in Graphene and Few-Layer Graphene: Applications in Thermal Management | A. A. Balandin | Univ. of California | USA |
| H-4-2 | 15:40 | Plasma Discharge Condition Dependence of the Crystallographic Quality of Networked Nanographite Grown by the Photoemission-Assisted Plasma-Enhanced CVD | S. Ogawa, T. Kaga, Y. Ohtomo, M. Sato, M. Nihei, Y. Takakuwa | Tohoku Univ., CREST-JST, Fujitsu Ltd. | Japan |
| H-4-3 | 16:00 | Carbon Nanotube Growth for Vias and Interconnects | J. Robertson, C. S. Esconjauregui, B. C. Bayer, F. Yan, G. Zhong, J. Dijon, H. Okuna | Cambridge Univ., CEA | UK |
Session H-5 Cu/Low-k Integration (Room 244, 16:50-18:00, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-5-1 (Invited) | 16:50 | Advanced organic polymers for the aggressive scaling of low-k materials | M. Pantouvaki | IMEC | Belgium |
| H-5-2 | 17:20 | DMOTMDS/MTMOS Multi-Stacked SiOCH films for Super-Low-k and Sufficient Modulus Formed by Damage-free Neutral Beam Enhanced CVD | T. Sasaki, S. Yasuhara, T. Shimayama, K. Tajima, H. Yano, S. Kadomura, M. Yoshimaru, N. Matsunaga, S. Samukawa | Tohoku Univ., STARC | Japan |
| H-5-3 | 17:40 | Improvement of Variability and Reliability in Low-k/Cu Interconnects by Selectivity Control in Dry-Etching Process | I. Kume, M. Ueki, N. Inoue, J. Kawahara, N. Ikarashi, N. Furutake, S. Saitoh, Y. Hayashi | Renesas Electronics Corp. | Japan |
Session I-3 III-V Devices Technologies (Room 245, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-3-1 (Invited) | 9:00 | Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diode | S. Suzuki | Tokyo Tech | Japan |
| I-3-2 | 9:30 | InSb MOS Diodes on a Si (111) Substrate Grown by Surface Reconstruction Controlled Epitaxy | A. Kadoda, T. Iwasugi, K. Nakatani, K. Nakayama, M. Mori, IK. Maezawa | Univ. of Toyama | Japan |
| I-3-3 | 9:45 | Effect of Fluorine Incorporation on Wsix/Al2O3/GaAs Gate Stack | B. S. Ong, K. L. Pey,C. Y. Ong, C. S. Tan, C. L. Gan, H. Cai, D. A. Antoniadis, E. Fitzgerald | Nanyang Technological University,Massachusetts Institute of Technology | Singapore |
| I-3-4 | 10:00 | Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors | T. Ando, H. taguchi, K. Uchimura, M. Mochiduki, T. Iida, Y. Takanashi | Tokyo Univ. of Sci. | Japan |
| I-3-5 | 10:15 | Defect-free GaAs/AlGaAs Heterostucture Etching Process by Chlorine/Argon Mixed Gas Neutral Beam | X. Y. Wang, C. H. Huang, Y. Ohno, M. Igarashi,A. Murayama, S. Samukawa | Tohoku Univ., Hokkaido Univ., CREST-JST | Japan |
Session I-4 Silicon Carbide Devices (Room 245, 15:10-16:10, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-4-1 (Invited) | 15:10 | SiC Power devices-Recent Progress and upcoming challenges | P. Friedrichs | SiCED Electronics Development GmbH & Co.KG | Germany |
| I-4-2 | 15:40 | Recombination Model at Perimeter of Stacking Faults in 4H-SiC pin Diode with Forward Voltage Drift | K. Nakayama, Y. Sugawara,H. Tsuchida, C. Kimura, H. Aoki, | The Kansai Electric Power Co., Inc.,Central Research Inst. Of Electric Power Industry,Osaka Univ. | Japan |
| I-4-3 | 15:55 | Influence of inserting AlN between AlSiON and 4H-SiC interface for MIS structure on SiC | N. Komatsu, T. Satoh, M. Honjo, T. Futatuki, C. Kimura, H. Aoki | Osaka Univ. | Japan |
Session I-5 Oxide Devices (Room 245, 16:50-17:50, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-5-1 | 16:50 | Zinc Oxide Based Transparent and Stretchable Thin Film Transistor on Rubber Substrate | K. Park, J. H. Ahn | SungKyunkwan Univ., SKKU Aadvanced Institute of Nanotechnology | Korea |
| I-5-2 | 17:05 | ZnO thin film fabricated by plasma assisted atomic layer deposition | Y. Kawamura, Y. Uraoka | Nara Institute of Science and Technology, CREST-JST | Japan |
| I-5-3 | 17:20 | The Unique Phenomenon in the Amorphous In2O3-Ga2O3-ZnO TFTs Degradation under the Dynamic Stress | M. Fujii, J. S. Jung, J. Y. Kwon, Y. Uraoka | NAIST, Samsung Advanced Inst. of Tech., CREST-JST | Japan |
| I-5-4 | 17:35 | Novel Passivation Layer for Improvement of Reliability In Amorphous Indium Gallium Zinc Oxide Thin Film Transistors (TFTs) | S. H. Choi, Y. W. Lee, J. Y. Kwon, M. K. Han | Seoul National Univ. | Korea |
Session J-3 Graphene Photonics and Electronics (Room 246, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-3-1 (Invited) | 9:00 | Graphene nanophotonics and nanoelectronics | F. Xia | IBM | USA |
| J-3-2 | 9:30 | Size and Chirality Dependence on Thermoelectric Properties of Graphene Nanoribbons | W. Huang, H. Liang | National Univ. of Singapore | Singapore |
| J-3-3 | 9:45 | Performance Potentials of Bilayer Graphene and Graphene Nanoribbon FETs | H. Hosokawa, H. Ando, H. Tsuchiya | Kobe Univ. | Japan |
| J-3-4 | 10:00 | Epitaxial Graphene-On-Silicon Logic Inverter | A. E. Moutaouakil, H. C. Kang,H. Handa, H. Fukidome, T. Suemitsu, E. Sano, M. Suemitsu, T. Otsuji | Tohoku Univ., Hokkaido Univ., CREST-JST | Japan |
| J-3-5 | 10:15 | Study of Hot Carriers in Optically Pumped Graphene | A. Satou, T. Otsuji, Ryzhii | Tohoku Univ., Univ. of Aizu, Japan Science and Technology Agency | Japan |
Session J-4 Graphene Electrical Properties (Room 246, 15:10-16:25, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-4-1 (Invited) | 15:10 | DOS Bottleneck for Contact Resistance in Graphene FETs | K Nagashio | Univ. of Tokyo | Japan |
| J-4-2 | 15:40 | Graphene layers dependent vibrational property of metal-graphene heterostructures | S. Entani, S. Sakai, Y. Matsumoto, H. Naramoto, T. Hao, K. Takanashi, Y. Maeda | JAEA, Tohoku Univ., Kyoto Univ. | Japan |
| J-4-3 | 15:55 | Observation of bandgap in epitaxial bilayer graphene field effect transistors | S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase,H. Hibino | NTT Corp. | Japan |
| J-4-4 | 16:10 | Bridging Growth and Electrical Properties of Single Carbon Nanowall | T. Kanda, H. Mikuni, K. Yamakawa, H. Kondo, M. Hiramatsu,M. Sekine, M. Hori | Nagoya Univ.,Katagiri Engineering Co., Ltd.,Meijo Univ. | Japan |
Session J-5 Graphene Devices (Room 246, 16:50-17:50, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-5-1 | 16:50 | Label-Free Immunosensors Based on Aptamer-Modified Graphene Field-Effect Transistors | Y. Ohno, K. Maehashi, K. Matsumoto | Osaka Univ. | Japan |
| J-5-2 | 17:05 | Performance Evaluation of Graphene Nanoribbon Heterojunction Tunneling Field Effect Transistors with various Source/Drain Doping Concentration and Heterojunction structure | H. Da, K. T. Lam, S. K. Chin, G. S. Samudra, Y. C. Yeo, G. Liang | National Univ. of Singapore, Institute of High Performance Computing | Singapore |
| J-5-3 | 17:20 | Impact of Surface Treatment of SiO2/Si Substrate on Mechanically Exfoliated Graphene | T. Yamashita, J. Fujita, K. Nagashio, T. Nishimura, K. Kita, A. Toriumi | Univ. of Tokyo | Japan |
| J-5-4 | 17:35 | Graphene based transversal-gated field effect transistor due to band gap modulation | S. B. Kumar, T. Fujita, G. Liang | National Univ. of Singapore | Singapore |
Session K-3 Compound Power Semiconductor Devices (Room 222, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-3-1 (Invited) | 9:00 | Recent Progress in High Voltage MOS-gated Power Transistors in GaN | T. P. Chow | Rensselaer Polytechnic Institute | USA |
| K-3-2 (Invited) | 9:30 | Progress in SiC Power Semiconductor Devices | T. Shinohe | Toshiba Corp. | Japan |
| K-3-3 | 10:00 | Effects of surface and crystalline defects on reverse characteristics of 4H-SiC JBS diodes | T. Katsuno, Y. Watanabe, H. Fujiwara, M. Konishi, T. Yamamoto, T. Endo | Toyota Central R&D Labs., Inc.,Toyota Motor Corp., DENSO Corp. | Japan |
| K-3-4 | 10:15 | High hole current achievement of hydrogen-terminated diamond MOSFETs coated with Poly-tetra-fluoro-ethylene | S. Sato, K. Tsuge, T. Tsuno, T. Ono, H. Kawarada | Waseda Univ. | Japan |
Session K-4 Next Generation Solar Cells and Systems (Room 222, 15:10-16:25, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-4-1 (Invited) | 15:10 | Next Generation PV-Inverters with SiC Semiconductors | B. Burger | Fraunhofer Institute of Solar Energy | Garmany |
| K-4-2 | 15:40 | Optical and Photoelectrical Characterizations of Wide-gap Nanocrystalline Silicon Layers | R. Mentek, B. Gelloz, M. Kawabata, N. Koshida | Tokyo Univ. of Agri. And Tech. | Japan |
| K-4-3 | 15:55 | Carrier Transfer Simulation on Si/SiC interface in Quantum Dot Solar Cells | S. Hirose, I. Yamashita, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, A. Miyamoto | Tohoku Univ. | Japan |
| K-4-4 | 16:10 | Development of Multi-Scale Simulation Method for Dye-Sensitized Solar Cells Including Effect of Photoelectrode Material Interface | M. Onodera, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, A. Miyamoto | Tohoku Univ. | Japan |
Session K-5 Compound Semiconductor Solar Cells (Room 222, 16:50-18:05, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-5-1(Invited) | 16:50 | Flexible Cu(In,Ga)Se2 Thin Film Solar Cells and Challenges for Low Temperature Growth | C. A. Kaufmann | Helmholtz Zentrum Berlin für Materialien und Energie | Germany |
| K-5-2 | 17:20 | First principles calculations of defect formation in In-free photovoltaic semiconductors Cu2ZnSnS4 and Cu2ZnSnSe4 | T. Maeda, S. Nakamura, T. Wada | Ryukoku Univ. | Japan |
| K-5-3 | 17:35 | Kinetics of strain relaxation in lattice-mismatched InxGa1-xAs/GaAs heteroepitaxy | T. Sasaki, H. Suzuki, M. Takahasi, S. Fujikawa, I. Kamiya, Y. Ohshita, M. Yamaguchi | Toyota Tech. Inst., Univ. of Miyazaki, JAEA | Japan |
| K-5-4 | 17:50 | Numerical Analysis of a Solar Cell with a Tensile-Strained Ge as a Novel Narrow Band Gap Absorber | Y. Hoshina, M. Shimizu, A. Yamada, M. Konagai | Tokyo Tech | Japan |
Session L-3 Nano Structures and Devices (Room 223, 9:00-10:30, September 23) |
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| Paper # | Start Time | Title | Authors | Affiliations | Country |
| L-3-1 (Invited) | 9:00 | Applications of Nanotechnology in Biomedical Micro/Nano Devices | Gou-Jen Wang | National Chung Hsing Univ. | Taiwan |
| L-3-2 | 9:30 | Development of Nanoscale Patterning Method of Self-Assembled Monolayer using Photothermal Desorption in Near-field | Y. Yamamoto, Y. Taguchi, Y. Nagasaka | Keio Univ. | Japan |
| L-3-3 | 9:45 | Positional control of crystal grains in silicon thin film utilizing cage shaped protein | Y. Tojo, A. Miura, I. Yamashita, Y. Uraoka | NAIST, National Chiao Tung Univ.,Panasonic Corp., CREST | Japan |
| L-3-4 | 10:00 | Control of Activation Energy for Electron Transport in Two-Dimensional Array of Si Nanodisks | M. Igarashi, C. H. Huang, T. Morie, S. Samukawa | Tohoku Univ., Kyushu Inst. of Tech. | Japan |
| L-3-5 | 10:15 | Optical Characteristics of Two-dimensional Array of Si Nano-disks Fabricated by Defect-free Neutral Beam Etching with Bio-template | C. H. Huang, M. Igarashi, M. F. Budiman, R. Oshima, I. Yamashita, Y. Okada, S. Samukawa | Tohoku Univ., Univ. of Tokyo, NAIST,CREST | Japan |