| Session A-6 Organic Transistors and Device Physics I (Room 211, 9:00-10:30, September 24) | |||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-6-1 (Invited) | 9:00 | Ink-jet Printing of Organic Thin-Film Transistors | T. Kawase | Seiko Epson Corp. | Japan |
| A-6-2 | 9:30 | Organic CMOS Logic Papers with In-Field User Customizability | T. Sekitani, K. Ishida, N. Masunaga, R. Takahashi, S. Shino, U. Zschieschang, H. Klauk, M. Takamiya, T. Sakurai, T. Someya | Tokyo Univ. of Sci., Tokyo Univ., Mitsubishi Paper Mills Ltd., Max Planck Inst. for Solid State Research, Tokyo Univ., Tokyo Univ. | Japan |
| A-6-3 | 9:45 | Effects of an Interface Dipole Monolayer on Pentacene Organic Field-Effect Transistors | W. Ou-Yang, K. Lee, M. Weis, T. Manaka, M. Iwamoto | Tokyo Tech., Slovak Aca. Sci. | Japan |
| A-6-4 | 10:00 | Organic transistors and circuits with parylene gate dielectric manufactured using subfemtoliter inkjet | T. Yokota, Y. Noguchi, Y. Kato, T. Sekitani, S. Takao | Tokyo Univ. | Japan |
| A-6-5 | 10:15 | Effects of Gold Nanoparticles on Pentacene Organic Field-effect Transistors | K. Lee, W. Ou-Yang, M. Weis, D. Taguchi, T. Manaka, M. Iwamoto | Tokyo Tech, Slovak Aca. Sci | Japan |
Session A-7 Organic Transistors and Device Physics II (Room 211, 11:15-12:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-7-1 | 11:15 | A Proposal of High Performance and Highly Fabricable Complementary Organic Thin Film Transistor Structure | A. Sugawara, Y. Wada, Y. Ishikawa, T. Toyabe | Tokyo Univ. | Japan |
| A-7-2 | 11:30 | Charge modulated reflectance measurement for probing carrier distribution in the pentacene field effect transistor | T. Manaka, S.Kawashima, Y. Tanaka, M. Iwamoto | Tokyo Tech. | Japan |
| A-7-3 | 11:45 | Bias-temperature-instability and thermal anneal effects of organic thin-film transistors | P. H. Chen, P. Y. Lo, T. S. Hu, P. Li | National Central Univ., Indus. Tech. Res. Institute | Taiwan |
| A-7-4 | 12:00 | Transport Mechanism at the First-layered Pentacene Grains and Grain Boundaries | Y. Hu, L. Wang, Q. Qi, C. Jiang | National Center for Nanoscience and Tech., Chinese Academy of Sci. | China |
Session A-8 Organic Transistors and Device Fabrication I (Room 211, 13:30-15:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-8-1 (Invited) | 13:30 | Materials and Processes for Air-Stable n-Channel Organic Transistors | Z. Bao | Stanford Univ. | USA |
| A-8-2 | 14:00 | 3 V-driven flexible organic transistors with mobility exceeding 2 cm2/Vs | K. Fukuda, N. Uchiyama, T. Sekitani, U. Zschieschang, H. Klauk, T. Yamamoto, K. Takimiya, T. Someya | Tokyo Univ., Tokyo Univ., Max Planck Inst., Hiroshima Univ. | Japan |
| A-8-3 | 14:15 | Different interfacial carrier behaviors between k-NPD and pentacene double-layer device with a polyimide blocking-layer by time-resolved optical second harmonic generation | L. Zhang, D. Taguchi, J. Li, T. Manaka, M. Iwamoto | Tokyo Tech. | Japan |
| A-8-4 | 14:30 | Megahertz Operation of Rectifier Circuits using Pentacene Thin-Film Transistors | M. Kitamura, Y. Arakawa | Tokyo Univ. | Japan |
| A-8-5 | 14:45 | Realization of Pentacene-based Thin Film Transistor Arrays for Large-area Organic Electronics Being Compatible with the Roll-to-Roll Manufacturing Technique | L. Wang, D. Li, C. Jiang | National Center for Nanoscience and Tech., Chinese Academy of Sci. | China |
Session A-9 Organic Transistors and Device Fabrication II (Room 211, 15:30-17:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| A-9-1 | 15:30 | Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON higk-k gate insulator | M. Liao, Y. U. Song, J. Ishikawa, T. Sano, J. Gao, H. Ishiwara, S. Ohmi | Tokyo Tech. | Japan |
| A-9-2 | 15:45 | Oxygen Plasma Process of Self-assembled Monolayer Gate Dielectric for 2-V Operation High-mobility Organic TFT | K. Kuribara, T. Nakagawa, K. Fukuda, T. Yokota, T. Sekitani, U. Zschieschang, H. Klauk, T. Someya, T. Yamamoto, K. Takimiya | Tokyo Univ., Max Planck Inst for Solid State Res., Hiroshima Univ. | Japan |
| A-9-3 | 16:00 | Direct observation of carrier behavior leading to electroluminescence in tetracene field-effect transistor | Y. Ohshima, H. Satou, T. Manaka, H. Kohn, N. Hirako, M. Iwamoto | Tokyo Tech. | Japan |
| A-9-4 | 16:15 | Diffuser micropump structured with extremely flexible diaphragm of 2 micron-thick polyimide film | Y. Liu, H. Komatsuzaki, Z. Duan, Y. Nishioka | Nihon Univ. | Japan |
| A-9-5 | 16:30 | Printed Electrode for All-Printed Polymer Diode | M. Yoshida, K. Suemori, S. Uemura, S. Hoshino, N. Takada, T. Kodzasa, T. Kamata | AIST | Japan |
| A-9-6 | 16:45 | A Tunable Emission Prepared by Novel Photo-induced Color-Change Materials | W. T. Liu, W. Y. Huang | National Sun Yat-sen Univ. | Taiwan |
Session B-6 Junction Technology (Room 212, 9:00-10:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-6-1 (Invited) | 9:00 | Overview and Challenges in Source/Drain Formation Technology in High Performance Transistors. | K. Suguro | Toshiba Corp. | Ｊａｐａｎ |
| B-6-2 | 9:30 | Raised S/D for Advanced Planar MOSFET devices: Challenges and Applications for the 20nm Node and Beyond | N. Loubet, P. Khare, S. Mehta, S. Ponoth, B. Haren, Q. Liu, K. Cheng, J. Kuss, T. Adam, B. Doris, V. Paruchuri, W. Kleemeier, R. Sampson | STMicroelectronics, IBM | USA |
| B-6-3 | 9:50 | Raman Spectroscopy Measurement of Silicidation Induced Stress in Si and its Impact on Performances of Metal Source/Drain MOSFETs | S. Migita, V. Poborchii, T. Tada, Y. Morita, W. Mizubayashi, H. Ota | AIST | Japan |
| B-6-4 | 10:10 | Accurate Measurement of Silicide Specific Contact Resistivity by Cross Bridge Kelvin Resistor for 28 nm CMOS technology and Beyond | K. Ohuchi, N. Kusunoki, F. Matsuoka | Toshiba America Electronics Components, Inc. | USA |
Session B-7 Dopant Characterization (Room 212, 11:15-12:25, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-7-1 (Invited) | 11:15 | Dopant/carrier profiling in nanostructures. | W. Vandervorst | IMEC | belgium |
| B-7-2 | 11:45 | Hole generation in B-implanted Ge without annealing: Formation of B12 cluster acting as a double acceptor | M. Koike, Y. Kamimuta | MIRAI-Toshiba | Japan |
| B-7-3 | 12:05 | Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily B-doped Silicon | H. Itokawa, A. Ohta, M. Ikeda, I. Mizushima, S. Miyazaki |
Toshiba Corp., Hiroshima Univ. | Japan |
Session B-9 Interface and Strain Characterization (Room 212, 15:30-17:10, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| B-9-1 | 15:30 | Measurements of Electrostatic Potential Across p-n Junctions on Oxidized Si Surfaces by Scanning Multi-Mode Tunneling Spectroscopy | L. Bolotov, T. Tada, M. Iitake, M. Nishizawa, T. Kanayama | AIST | Japan |
| B-9-2 | 15:50 | Interfacial atomic structure between Pt-added NiSi and Si (001) | N. Ikarashi, M. Narihiro, T. Hase | Renesas Electronics Corp. | Japan |
| B-9-3 | 16:10 | TO- and LO-mode analyses in asymmetric stretching vibrations in ultra thin thermally grown GeO2 on Ge substrate | M. Yoshida, T. Nishimura, C. H. Lee, K. Kita, K. Nagashio, A. Toriumi | Univ. of Tokyo, JST-CREST | Japan |
| B-9-4 | 16:30 | Quantitative Analysis of Stress Relaxation in TEM specimen fabrication by Raman Spectroscopy with High-NA Oil-Immersion Lens | D. Kosemura, A. Ogura | Meiji Univ. | Japan |
| B-9-5 | 16:50 | Uniaxial and Biaxial Strain Distribution Mapping in SOI Micro-Structures by Polarized Raman Spectroscopy | M. Kurosawa, T. Sadoh, M. Miyao | Kyushu Univ., JSPS | Japan |
Session C-6 Advanced CMOS Technology (Room 213, 9:00-10:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-6-1 (Invited) | 9:00 | Extremely-Thin SOI (ETSOI) for Mainstream CMOS: Challenges and Opportunities |
A. Khakifirooz | IBM | USA |
| C-6-2 | 9:30 | Variability in Variable Body Factor Silicon on Thin Box MOSFETs (SOTB MOSFETs) | Y. Yunxiang, D. Gang, H. Ruqi, L. Xiaoyan | Peking Univ. | China |
| C-6-3 | 9:50 | Universal Relationship between Settling Time of Floating-Body SOI MOSFETs and the Substrate Current in their Body-Tied Counterparts | A. Toda, K. Ohyama, N. Higashiguchi, D. Hori, M. Miyake, S. Amakawa, J. Ida, M. Miura-Mattausch | Hiroshima Univ., Kanazawa Inst. Of Tech. | Japan |
| C-6-4 | 10:10 | Ion-Ioff performance analysis of FDSOI MOSFETs with low processing temperature | C. Xu, P. Batude, C. Rauer, C. Le Royer, L. Hutin, A. Pouydebasque, C. Tabone, B. Previtali, O. Faynot, M. Mouis, V. Vinet | CEA-LETI/MINATEC, IMEP | France |
Session C-7 FinFET Devices (Room 213, 11:15-12:35, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-7-1 | 11:15 | Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication | T. Kamei, Y. Liu, K. Endo, S. Ouchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, T. Matsukawa, K. Sakamoto, A. Ogura, M. Masahara | Meiji University, AIST | Japan |
| C-7-2 | 11:35 | High-k Metal Gate FinFET SRAM Cell Optimization Considering Variability due to NBTI/PBTI and Surface Orientation | V. P. H. Hu, K. L. Fan, C. Y. Hsieh, P. Su, C. T. Chuang | National Chiao Tung Univ. | Taiwan |
| C-7-3 | 11:55 | Advantage of Plasma Doping for Source/Drain Extension for Bulk-FinFET | T. Izumida, K. Okano, T. Kanemura, M. Kondo, S. Inaba, S. Itoh, N. Aoki, Y. Toyoshima | Toshiba Corp. | Japan |
| C-7-4 | 12:15 | FinFETs Junctions Optimization by Conventional Ion Implantation for (Sub-)22nm Technology Nodes Circuit Applications | A. Veloso, A. De Keersgieter, S. Brus, N. Horiguchi, P. P. Absil, T. Hoffmann | IMEC | Belgium |
Session C-8 Gate-Insulation Reliability (Room 213, 13:30-15:10, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-8-1 | 13:30 | Using Power Transform to Study DC and AC CHC Effects on nMOSFETs in 65 nm Technology | S. Y. Chen, C. H. Tu, M. X. Wu, H. S. Huang, Z. W. Jhou, S. Chou, J. Ko | National Taipei Univ. of Tech., United Microelectronics Corp. | Taiwan |
| C-8-2 | 13:50 | Effect of Hot-Carrier Stress on the Recoverable and Permanent Components of Negative-Bias Temperature Instability | J. J. T. Ho, D. S. Ang, C. M. Ng | Nanyang Tech. Univ., GLOBALFOUNDRIES Singapore Pte. Ltd. | Singapore |
| C-8-3 | 14:10 | Effect of Positive Gate Stressing on the Recoverable Component of Negative-Bias Temperature Instability | A. A. Boo, D. S. Ang, Z. Q. Teo, C. M. Ng | Nanyang Tech. Univ., GLOBALFOUNDRIES Singapore Pte. Ltd. | Singapore |
| C-8-4 | 14:30 | Investigation of Recovery Effects on Degraded pMOSFETs of 65 nm Technology with Different Annealing Temperatures | S. Y. Chen, C. H. Tu, Y. F. Chen, H. S. Huang, Z. W. Jhou, S. Chou, J. Ko | National Taipei Univ. of Tech., United Microelectronics Corp. | Taiwan |
| C-8-5 | 14:50 | Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications | G. Bersuker, D. Heh, J. Huang, C.S. Park, A. Padovani, L. Larcher, P. Kirsch, R. Jammy | SEMATECH, Univ. di Modena e Reggio Emilia | USA |
Session C-9 Emerging Device Technology (Room 213, 15:30-17:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| C-9-1 (Invited) | 15:30 | CVD Graphene for High Speed Electronics | J. C. S. Woo | UCLA | USA |
| C-9-2 | 16:00 | High Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization | J. Mitard, B. De Jaeger, E. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G. Winderickx, E. Vrancken, W. E. Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. Absil, S. Biesemans, T. Hoffmann | IMEC,K.U Leuven, FWO, Univ. of Warwick, Stanford Univ., TSMC, IMEC | Belgium |
| C-9-3 | 16:20 | Ge FETs Gate Stack Passivation Options and their Scalability to low EOT | F. Bellenger, B. De Jaeger, L. Nyns, M. Zahid, M. Houssa, E. Vrancken, J. Tseng, M. Caymax, M. Meuris, K. De Meyer, M. Heyns, T. Hoffmann | IMEC, KULeuven, TSMC | Belgium |
| C-9-4 | 16:40 | Analysis of the Junctionless Transistor Architecture | J. P. Colinge, J. P. Raskin, A. Kranti, I. Ferain, C. W. Lee, N. Dehdashti Akhavan, P. Razavi, R. Yan, R. Yu, | Tyndall National Institute,Universite catholique de Louvain | Ireland |
Session D-6 Photonic and Electronic Integration (Room 221, 9:00-10:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-6-1 (Invited) | 9:00 | Membrane-type photonic devices for optical circuits on SOI | S. Arai, N. Nishiyama |
Tokyo Tech | Japan |
| D-6-2 | 9:30 | Towards Optical Networks-on-Chip Using CMOS Compatible III-V/SOI Technology | L. Grenouillet, P. Philippe, J. Harduin, N. Olivier, P. Grosse, L. Liu, T. Spuesens, P. Régreny, F. Mandorlo, P. Rojo-Romeo, R. Orobtchouk, D. Van Thourhout, J. M. Fedeli, | CEA-LETI/MINATEC, Ghent Univ., Technical Univ of Denmark, Institut des Nanotechnologies de Lyon INL | FRANCE |
| D-6-3 | 9:45 | Design and Fabrication of Flip-Chip Micro-LED Arrays with PWM Driver for Heterogeneous Optoelectronic Integrated Circuit Device | S. B. Shin, J. Chiba, H. Okada, S. Iwayama, A. Wakahara, | Univ. of Toyohashi of Tech., Stanley Electric Co. Ltd. | Japan |
| D-6-4 | 10:00 | Monolithic One-bit Counter Circuit with Light Emitting Diode Indicators Fabricated in Si/III-V-N/Si Heterostructure | S. Tanaka, K. Noguchi, K. Yamane, Y. Deguchi, Y. Furukawa, H. Okada, A. Wakahara, H. Yonezu | Toyohashi Univ. of Tech. | Japan |
| D-6-5 | 10:15 | Monolithic Integration of Ga(NAsP) laser on Si (001) Substrate | S. Liebich, M. Zimprich, P. Ludewig, A. Beyer, B. Kunert, N. Hossain, S. Jin, S. J. Sweeney, K. Volz, W. Stolz | Philipps Univ. Marburg, NAsP III/V GmbH, Univ. of Surrey | Germany |
Session D-7 Nano Photonics (Room 221, 11:15-12:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-7-1 | 11:15 | InGaAs Nano-Photodiode enhanced by Polarization-Insensitive Surface-Plasmon Antenna | D. Okamoto, J. Fujikata, K. Ohashi, | NEC Corp. | Japan |
| D-7-2 | 11:30 | Metallic Nano-Slit Array Lens for Spatial Resolution Improvement of In-vivo CMOS image sensor | K. Sasagawa, T. Noda,T. Tokuda, M. Islam, J. Ohta, | NAIST, JST-CREST, Univ. of California at Davis | Japan |
| D-7-3 | 11:45 | Enhanced Sensitivity of SOI Photodiode by Au Nanoparticles | Y. Matsuo, A. Ono, H. Satoh, H. Inokawa | Shizuoka Univ. | Japan |
Session D-8 Si Photonics (1) (Room 221, 13:30-15:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-8-1 (Invited) | 13:30 | Nanophotonic On-Chip Interconnection Networks for Energy-Performance Optimized Computing | K. Bergman | Columbia Univ. | USA |
| D-8-2 | 14:00 | Loss Measurement of Multiple Layer a-Si Waveguides toward 3D Si-Optical Circuits | J. H. Kang, K. Inoue, Y. Atsumi, N. Nishiyama, S. Arai, | Tokyo Tech | Japan |
| D-8-3 | 14:15 | Analysis of Vertically Stacked Structures of 2D PC Cavity and Amorphous-Silicon-Wire Waveguide with Low-Refractive-Index Material Cladding | T. Yamada, M. Okano, Y. Sakakibara, T. Kamei, J. Sugisaka, N. Yamamoto, M. Itoh, T. Sugaya, K. Komori, M. Mori | Univ. of Tsukuba, AIST | Japan |
| D-8-4 | 14:30 | Polarization-independent 5.4-ns Group Delay for Entire C-band by Integrated Delay Line of Si Rib Waveguide | M. Tokushima, T. Chu, A. Kamei, T. Horikawa | AIST | Japan |
| D-8-5 | 14:45 | Bandgap Control Using Strained Beam Structures for Si-Based Photonic Devices | K. Yoshimoto, R. Suzuki, Y. Ishikawa, K. Wada | Univ. of Tokyo | Japan |
| D-8-6 | 15:00 | Strained SiGe-on-Si beam for tunable near-infrared light emission | R. Suzuki, K. Yoshimoto, L. Décosterd, Y. Ishikawa, K. Wada | Univ. of Tokyo, Ecole Polytechnique Federale de Lausanne | Japan |
Session D-9 Si Photonics (2) (Room 221, 15:30-17:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| D-9-1 | 15:30 | Real-time synchrotoron radiation X-ray diffraction and abnormal temperature dependence of photoluminescence from erbium silicates on SiO2/Si substrates | H. Omi, T. Tawara, M. Tateishi, H. Komatsu, S. Takeda, Y. Tsusaka, Y. Kagoshima, J. Matsui | NTT Basic Res. Labs., Univ. of Hyogo, CAST | Japan |
| D-9-2 | 15:45 | Evaluation of optical absorption and light propagation loss in ErxY2-xSiO5 crystal waveguides | K. Homma, T. Nakajima, T. Kimura, H. Isshiki | Univ. of Electro-Communications | Japan |
| D-9-3 | 16:00 | Design and Simulation of Silicon Ring Optical Modulator with p/n Junctions along Circumference | Y. Amemiya, H. Ding, S. Yokoyama, | Hiroshima Univ. | Japan |
| D-9-4 | 16:15 | Design of Broadband Optical Switch Based on Mach-Zehnder Interferometer with Si wire Waveguides | K. Kintaka, Y. Shoji, S. Suda, H. Kawashima, T. Hasama, H. Ishikawa | AIST | Japan |
| D-9-5 | 16:30 | Development of Accelerometer Using Mach-Zehnder Interferometer Type Optical Waveguide | M. Suzuki, K. Nishioka, T. Takahashi, S. Aoyagi, Y. Amemiya, M. Fukuyama, S. Yokoyama, | Kansai Univ., Hiroshima Univ. | Japan |
| D-9-6 | 16:45 | 10-GHz Operation of a PLZT Electro-Optic Modulator with a Ring Resonator Formed on a Silicon Substrate | T. Shimizu, M. Nakada, H. Tsuda, H. Miyazaki, J. Akedo, K. Ohashi | MIRAI-Selete,NEC Corp.,AIST | Japan |
| D-9-7 | 17:00 | Crosstalk inprovement in Si-wire optical cross-bar switch | H. Kawashima, Y. Shoji, K. Kintaka, S. Suda, T. Hasama, H. Ishikawa | AIST | Japan |
Session E-6 FeRAM (Room 241, 9:00-10:20, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-6-1 (Invited) | 9:00 | Current Status and Future Challenge of Fe-NAND/SRAM Cell Technology | K. Takeuchi | Univ. of Tokyo | Japan |
| E-6-2 (Invited) | 9:30 | Current Development Status and Future Challenges of FeRAM | Y. Fujimori | ROHM Co., Ltd. | Japan |
| E-6-3 | 10:00 | Synthesis of pure phase BiFeO3 films grown on Iridium electrode by MOCVD for ferroelectric memories | Y. Kumura, S. Y. Yang, P. Yu, J. Zhang, J. Seideil, A. I. Khan, R. Ramesh | Toshiba Corporation, University of California Berkeley | Japan |
Session E-7 MRAM (Room 241, 11:15-12:05, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-7-1(Invited) | 11:15 | Current Status and Future Challenge of Embedded High-speed MRAM | S. Fukami | NEC Corp. | Japan |
| E-7-2 | 11:45 | Phenomenological model for stress and relaxation processes of resistance drift in magnetic tunnel junctions | Y. Kamakura, S. Nakano, K. Taniguchi, | Osaka Univ. | Japan |
Session E-8 PRAM/ReRAM (Room 241, 13:30-15:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-8-1 (Invited) | 13:30 | A Survey of Cross Point Phase Change Memory Technologies | D. Kau | Intel Corp. | USA |
| E-8-2 | 14:00 | A SiO2 Nano-thermal Unipolar 0T-1R ReRAM Device with Built-in Diode Isolation | K. P. Chang, H. T. Lue, K. Y. Hsieh, C. Y. Lu | Macronix Int'l Co., Ltd. | Taiwan |
| E-8-3 | 14:20 | Resistive Switching Device for Neuromorphic Device Application | K. Seo, I. Kim, S. Park, S. Jung, M. Jung, J. Park, J. Kong, K. Lee, B. Lee, H. Hwang | GIST | Korea |
| E-8-4 | 14:40 | A Novel Ni/WOX/W ReRAM with Excellent Retention and Low Switching Curren | W. C. Chien, Y. C. Chen, F. M. Lee, Y. Y. Lin, E. K. Lai, Y .D. Yao, J. Gong, S. F. Horng, C. W. Yeh, S. C. Tsai, C. H. Lee, Y. K. Huang, C. F. Chen, H. F. Kao, Y. H. Shih, K. Y. Hsieh, C. Y. Lu | Macronix Int'l Corp. Ltd., Fu Jen Univ., National Tsing Hua Univ. | Taiwan |
Session E-9 ReRAM (Room 241, 15:30-17:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| E-9-1 (Invited) | 15:30 | Overview and Future Challenge of Hafnium Oxide ReRAM | Y. S. Chen | ITRI | Taiwan |
| E-9-2 | 16:00 | A New Tunneling Barrier Width Model of the Switching Mechanism in Hafnium Oxide-Based Resistive Random Access Memory | Y. H. Tseng, S. S. Chung, S. Shin, S. S. M. Kang, H. Y. Lee, M. J. Tsai | National Chiao Tung University, University of California, Merced,ITRI | Taiwan |
| E-9-3 | 16:20 | High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process | K. Okamoto, M. Tada, K. Ito, Y. Saito, S. Ishida, H. Hada | NEC Corp. | Japan |
| E-9-4 | 16:40 | Effects of Reactive Ti Creating Oxygen Vacancy Inside TiO2 on Resistive Switching Characteristics in Resistive Random Access Memory Device | S. J. Kim, M. G. Sung, W. G. Kim, J. Y. Kim, J. H. Yoo, J. N. Kim, B. G. Gyun, J. Y. Byun, M. S. Joo, J. S. Roh, S. K. Park | Hynix Semiconductor Inc. | Korea |
Session F-6 Spintronics (I) –Spin-related Phenomena and Applications– (Room 242, 9:30-10:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-6-1 | 9:30 | Semiconductor / Ferromagnetic Metal Hybrid Optical Isolators using Nonreciprocal Polarization Rotation | H. Shimizu, S. Goto, T. Mori | Tokyo Univ. of Agri. and Tech. | Japan |
| F-6-2 | 9:45 | Fabrication of MgO-based Magnetic Tunnel Junctions for Magnetic Field Sensor | K. Fujiwara, O. Mikihiko, K. Futoyoshi, N. Hiroshi, Y. Ando | Tohoku Univ., RICOH COMPANY,LTD. | Japan |
| F-6-3 | 10:00 | First-Principles Calculations of Quantum Transport Properties of Fe/Fe2VAl/Fe Trilayers | S. Yabuuchi, I. Kitagawa, T. Hamada | Hitachi Ltd. | Japan |
| F-6-4 | 10:15 | Highly spin-polarized tunneling in Heusler-alloy-based magnetic tunnel junctions with a Co2MnSi upper electrode and a MgO barrier | H. x. Liu, T. Taira, Y. Honda, K. Matsuda, T. Uemura, M. Yamamoto | Hokkaido Univ. | Japan |
| F-6-5 | 10:30 | Temperature Dependence of Magnetic Damping in Heusler Alloy Thin Films | M. Oogane, S. Mizukami, Y. Kota, T. Kubota, H. Naganuma, A. Sakuma, Y. Ando | Tohoku Univ. | Japan |
Session F-7 Spintronics (II) –New Applications– (Room 242, 11:15-12:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-7-1 (Invited) | 11:15 | Three-Terminal Spin-Torque-Based Magnetic Memory Element | M. C. Gaidis | IBM | USA |
| F-7-2 (Invited) | 11:45 | Spin dice-random number generator using current induced magnetization switching in MgO-MTJ | A. Fukushima | AIST | Japan |
| F-7-3 | 12:15 | High-speed MRAM Random Number Generator using Error-Correcting Code | T. Tetsufumi, N. Shimomura, S. Ikegawa, M. Matsumoto, S. Fujita, H. Yoda | Toshiba Corp. | Japan |
Session F-8 Spintronics (III) –Semiconductors– (Room 242, 13:30-15:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-8-1 (Invited) | 13:30 | Magnetic properties of GaMnAs and its application for multi-valued memory device | S. Lee | Korea Univ. | Korea |
| F-8-2 (Invited) | 14:00 | Electrical Detection of Spin Transport in Si using high-quality Schottky Contacts | K. Hamaya | Kyushu Univ. | Japan |
| F-8-3 | 14:30 | Spin injection into GaAs from Fe/GaOx Tunnel Injector | H. Saito, J. Le Breton, V. Zayets, Y. Mineno, S. Yuasa, K. Ando | National Inst. of Adv. Indus. Sci. and Tech, Univ. of Twente, Toho Univ. | Japan |
| F-8-4 | 14:45 | Large magnetoresistance of Ge1-<i>x</i>Mn<i>x</i> single films and heterostructures with magnetic nanocolumns | S. Yada, R. Okazaki, M. Tanaka | Univ. of Tokyo | Japan |
Session F-9 Spintronics (IV) –Device and Circuits– (Room 242, 15:30-16:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| F-9-1 (Invited) | 15:30 | Spin transfer torque effects in nanopillar devices with perpendicular anisotropy | S. Mangin | IJL – Nancy Université | France |
| F-9-2 | 16:00 | High Speed Spin-Transfer Switching in GMR Nanopillars with Perpendicular Anisotropy | H. Tomita, T. Nozaki, T. Seki, T. Nagase, E. Kitagawa, M. Yoshikawa, T. Daibou, M. Nagamine, S. Ikegawa, N. Shimomura, H. Yoda, Y. Suzuki | Osaka Univ, Toshiba R & D center | Japan |
| F-9-3 | 16:15 | Hierarchical Nonvolatile Memory with Perpendicular Magnetic Tunnel Junctions for Normally-Off Computing | K. Abe, K. Nomura, S. Ikegawa, T. Kishi, H. Yoda, S. Fujita | Toshiba Corp. | Japan |
| F-9-4 | 16:30 | Design of a Process-Variation-Aware Nonvolatile MTJ-Based Lookup-Table Circuit | D. Suzuki, M. Natsui, H. Ohno, T. Ohno | Tohoku Univ. | Japan |
Session G-6 Image Sensors and Interface Circuits (Room 243, 9:00-10:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-6-1 (Invited) | 9:00 | CMOS High–Speed Image Sensors –Pixel Devices, Circuits and Architectures– | S. Kawahito | Shizuoka Univ. | Japan |
| G-6-2 | 9:30 | A Column Parallel Cyclic ADC with an Embedded Programmable Gain Amplifier for CMOS Image Sensors | T. Iida, M. A. Mustafa, L. Zhuo, K. Yasutomi, S. Itoh, S. Kawahito | Shizuoka Univ. | Japan |
| G-6-3 | 9:50 | A CMOS Image Sensor with an Automatic Pixel-Sensitivity Adjustment Function | G. Ramos, Y. Hirata, Y. Arima, | Kyushu Inst. of Tech., Fukuoka Indus., Sci. and Tech. Foundation | Japan |
| G-6-4 | 10:10 | A Subnanowatt Vibration-sensing Circuit for Dust-size Battery-less Sensor Nodes | T. Shimamura, H. Morimura, M. Ugajin, S. Mutoh | NTT Microsystem Integration Laboratories | Japan |
Session G-7 Data Converter Circuits (Room 243, 11:15-12:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-7-1 | 11:15 | Qpix v.1: A high speed 400-pixels readout LSI with 10-bit 10MSps pixel ADCs | F. Li, V. M. Khoa, M. Miyahara, A. Matsuzawa | Tokyo Tech | Japan |
| G-7-2 | 11:35 | A 0.5V 1.4mW 750MHz 10b CMOS Current Steering DAC | N. Shimasaki, R. Ito, M. Miyahara, A. Matsuzawa | Tokyo Tech | Japan |
| G-7-3 | 11:55 | Low-Complexity Time-Domain Winner-Take-All Circuit with High Time-Difference Resolution Limited only by With-In-Die Variation | M. Yasuda, T. Ansari,W. Imafuku, A. Kawabata,T. Koide, H. J. Mattausch | Hiroshima Univ. | Japan |
Session G-8 Bio Nanofusion Technologies (Room 243, 13:30-15:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-8-1 (Invited) | 13:30 | Novel Quantum Effect Devices realized by Fusion of Bio-template and Defect-Free Neutral Beam Etching | S. Samukawa | Tohoku Univ. | Japan |
| G-8-2 | 14:00 | Planer Multi Electrode Array Coupled CMOS Image Sensor for in vitro Electrophysiology | A. Nakajima, T. Noda, K. Sasagawa, T. Tokuda, Y. Ishikawa, S. Shiosaka, J. Ohta | NAIST, JST-CREST | Japan |
| G-8-3 | 14:15 | Atmospheric Pressure Micro Inductively Coupled Plasma Light Source toward Portable Spectrometry System | S. Kumagai, H. Matsuyama, M. Hori, M. Sasaki | Toyota Technological Inst., Nagoya Univ. | Japan |
| G-8-4 | 14:30 | Controlled Thermal Emission of Narrow-band IR Waves for Downsizing Sensor Module | K. Masuno, S. Kumagai, M. Sasaki | Toyota Technological Inst. | Japan |
| G-8-5 | 14:45 | Fabrication and Location of 3-nm Pt Wires onto Silicon Surfaces | M. Kobayashi, K. Onodera, Y. Watanabe, K. Shiba, I. Yamashita | Japanese Foundation for Cancer Res., NAIST, Univ. of Tokyo, Panasonic Corp. | Japan |
Session G-9 Nanomaterial Applications (Room 243, 15:30-16:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| G-9-1 | 15:30 | Free-Standing Lipid Bilayers Based on Nanoporous Alumina Films | A. Hirano-Iwata, T. Taira,A. Oshima, Y. Kimura, M. Niwano | Tohoku Univ., PRESTO, JST | Japan |
| G-9-2 | 15:45 | Fabrication of CMOS-compatible Poly-Si Nanowire FET Sensor | H. Y. Chen, C. Y. Lin,M. C. Chen, H. C. Chen,C. C. Huang,C. H. Chien | National Chiao Tung Univ., National Nano Device Labs. | Taiwan |
Session H-6 Cu Reliability (Room 244, 9:10-10:50, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-6-1 (Invited) | 9:10 | Cu Alloys and Noble Metal Liner Materials to Extend Damascene Copper Interconnect Schemes | T. Nogami | IBM | USA |
| H-6-2 | 9:40 | Migration of Copper through Tungsten-Filled Via on Single Damascene Copper Interconnect | B. Kim, J. Kim, B. Seo, J. Oh, J. Cho, J. Lee, K. Hong, B. Choi, S. Park | Hynix Semiconductor Inc. | Korea |
| H-6-3 (Invited) | 10:00 | Electromigration Void Dynamics in Copper-Based Interconnects | C.V. Thompson | MIT | USA |
| H-6-4 | 10:30 | Structure Analyses of Ti-Based Self-Formed Barrier Layers | K. Kohama, K. Ito,Y. Sonobayashi, K. Ohmori,K. Mori,K. Maekawa,Y. Shirai, M. Murakami | Kyoto Univ.,Renesas Tech. Corp., Ritsumeikan Univ. | Japan |
Session H-7 3D Interconnect (Room 244, 11:15-12:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-7-1 (Invited) | 11:15 | 3D Integration Technology and 3D System-on- a Chip | M. Koyanagi | Tohoku Univ. | Japan |
| H-7-2 | 11:45 | Evaluation of Copper Diffusion in Thinned Wafer with Extrinsic Gettering for 3D-LSI by Capacitance-Time(C-t) measurement" | J. Bea, K. Lee, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi | Tohoku Univ. | Japan |
| H-7-3 | 12:05 | Through Silicon Photonic Via with Si core for Low loss and High Density Vertical Optical Interconnection in 3D-LSI | A. Noriki, K. Lee, J. Bea, T. Fukushima, T. Tanaka, M. Koyanagi | Tohoku Univ. | Japan |
Session H-8 3D Integration (Room 244, 13:30-15:10, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-8-1 (Invited) | 13:30 | Low temperature bonding for 3D integration | T. Suga | Univ. of Tokyo | Japan |
| H-8-2 | 14:00 | Self-Assembly with Metal Microbump-to-Microbump Bonding for Advanced Chip-to-Wafer 3D Integration | E. Iwata, Y. Ohara, K. W. Lee, T. Fukushima, T. Tanaka, M. Koyanagi | Tohoku Univ. | Japan |
| H-8-3 | 14:20 | Metal Micro-Bump Induced Stress in 3D-LSIs _a micro-Raman Study | M. Murugesan, Y. Ohara, J. C. Bea, K. W. Lee, T. Fukushima, T. Tanaka, M. Koyanagi | Tohoku Univ. | Japan |
Session H-9 Image Sensor (Room 244, 15:30-16:10, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| H-9-1 | 15:30 | Characterization of LTO coating on microlens of CMOS image sensor | J. Gambino, B. Leidy,C. Musante, K. Ackerson,B. Guthrie,J. Twombly, E. Cooney,P. Pokrinchak,D. Meatyard, J. Adkisson, R. Rassel, M. Jaffe | IBM | USA |
| H-9-2 | 15:50 | Near-Infrared Image Sensor Fabricated Using Compliant Bump | N. Watanabe, F. Hoashi,Y. Nagai, H. Inada, Y. Iguchi,T. Asano | Kyushu Univ., Sumitomo Electric Industries, Ltd. | Japan |
Session I-6 GaN Power Transistors (Room 245, 9:00-10:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-6-1 (Invited) | 9:00 | GaN Based Power Deviices:A New Era in Power Electronics | M. A. Briere | Executive Scientific Consultant ACOO Enterprises LLC Under contract with International Rectifier | USA |
| I-6-2 | 9:30 | Thermally Stable Isolation of AlGaN/GaN Transistors by Using Fe Ion Implantation | H. Umeda, T. Takizawa,Y. Anda, T. Ueda, T. Tanaka, | Panasonic Corp. | Japan |
| I-6-3 | 9:45 | AlGaN/GaN MOS-HEMT Single-Chip DC/DC Boost Converter Using High-k Gd2O3 Insulator | C. W. Yang, S. W. Peng,C. K. Lin, H. C. Chiu | Chang Gung Univ. | Taiwan |
| I-6-4 | 10:00 | Reduction of current collapse in AlGaN/GaN HEMTs using thick GaN cap layer | H. Chonan, Y. Sakamura, G. Piao, T. Ide, M. Shimizu, Y. Yano, H. Nakanishi, | Tokyo Univ. of Sci., AIST, Taiyo Nippon Sanso Corp. | Japan |
| I-6-5 | 10:15 | Reduced contact resistance and Improved surface morphology for Ohmic Contacts on AlGaN/GaN based Semiconductors employing KrF Laser Irradiation | G. H. Wang, T. Sudhiranjan, X. Wang, H. Y. Zheng, T. K. Chan, T. Osipowicz, Y. L. Foo, | Insititute of Materials Research and Engineering, Singapore Inst. Of Manufacturing Tech., National Univ. of Singapore | Singapore |
| I-6-6 | 10:30 | Nonequilibrium Carrier Transport Observed in Pnp AlGaN/GaN HBTs | K. Kumakura, T. Makimoto | NTT Corp. | Japan |
Session I-7 Processing and Interface Technologies (Room 245, 11:15-12:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-7-1 | 11:15 | Deep level characterization of MOVPE-grown AlGaN with high Al compositions | S. Okuzaki, K. Sugawara, H. Taketomi, H. Miyake, K. Hiramatsu, T. Hashizume | Hokkaido Univ., Mie Univ. | Japan |
| I-7-2 | 11:30 | Direct Liquid Cooling Technology for Power Semiconductor Devices | N. Otsuka, S. Nagai, M. Yanagihara, Y. Uemoto, D. Ueda, | Panasonic Corp. | Japan |
| I-7-3 | 11:45 | Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure | P. Bidzinski, M. Miczek, B. Admowicz, C. Mizue, T. Hashizume, | Silesian Univ. of Tech. Hokkaido Univ. | Poland |
| I-7-4 | 12:00 | Quantum Efficiency of H2 Generation by Water Decomposition Using p-GaN Photoelectrode | T. Shimazaki, N. Kobayashi, M. Kako, J. Yamamoto, Y. Ban, K. Matsumoto | Univ. of Electro-Communications, TNEMC Ltd. | Japan |
| I-7-5 | 12:15 | New Stacked MIM Capacitors with a Side-contact Formation Technology | T. Tsutsumi, S. Sugitani,K. Nishimura, M. Ida | NTT Corp. | Japan |
Session I-8 Crystalline and Thin Film Silicon Solar Cell (Room 245, 13:30-15:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-8-1 (Invited) | 13:30 | Crystalline Silicon Solar Cells, Thinner the Better | Y. Hayashi | Nanosystem Research Institute, National Institute of AIST | Japan |
| I-8-2 | 14:00 | Enhanced Power Conversion Efficiency for Silicon Solar Cells Utilizing a Uniformly Distributed Indium-Tin-Oxide Nano-Whiskers | C. H. Chang, M. H. Hsu, W. L. Chang, W. C. Sun, P. Yu | National Chiao Tung Univ., Industrial Technology Research Institute | Taiwan |
| I-8-3 | 14:15 | Microstructures of polycrystalline silicon films formed through explosive crystallization induced by flash lamp annealing | K. Ohdaira, S. Ishii, T. Tomura, H. Matsumura | JAIST, JST | Japan |
| I-8-4 | 14:30 | Stacked Solar Cells using Transparent and Conductive Adhesive | J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, M. Kondo | Tokyo Univ. of Agri. And Tech., AIST | Japan |
| I-8-5 | 14:45 | In-situ observation of polycrystalline Si thin films grown using Al-doped ZnO on glass substrate by the aluminum-induced crystallization | M. Jung, A. Okada,T. Saito, T. Suemasu,N. Usami, | Tohoku Univ.,Univ. of Tsukuba | Japan |
| I-8-6 | 15:00 | Photothermal Spectroscopy by Atomic Force Microscopy on Crystalline Silicon Solar Cell Materials | K. Hara, T. Takahashi | Univ. of Tokyo | Japan |
Session I-9 Crystalline and Thin Film Silicon Solar Cell (Room 245, 15:30-16:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| I-9-1 (Invited) | 15:30 | Impact of impurities on the solar cell performance | G. Coletti | ECN Solar Energy | the Netherlands |
| I-9-2 | 16:00 | Optimum design of a-Si:H/uc-Si:H tandem thin film solar cells with a low-refractive-index AZO transparent conducting oxide | J. W. Leem, J. S. Yu | Kyung Hee Univ. | Korea |
| I-9-3 | 16:15 | Efficiency enhancement of a-Si thin film solar cells by using different light trapping structures | C. W. Kuo, W. P. Chu, J. S. Lin, T. C. Lin, Y. S. Tsai, F. S. Juang, M. H. Chung, T. E. Hsieh, M. O. Liu | National Formosa Univ., Osaka Univ., Industrial Tech. Res. Inst.,KunSan Univ., National Chiao Tung Univ. | Taiwan |
| I-9-4 | 16:30 | Three-terminal a-Si solar Cells | C. H. Tai, C. H. Lin, C. M. Wang, C. C. Lin | National Dong Hua Univ. | Taiwan |
Session J-6 Nanowire Transistors (Room 246, 9:00-10:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-6-1 (Invited) | 9:00 | Circuit Implementation of InAs Nanowire FET | W. Prost | Solid-State Electronics Department, CeNIDE, University of Duisburg-Essen, Duisburg, Germany | Germany |
| J-6-2 | 9:30 | Transport Physics of Quasi-Ballistic Nanowire MOSFETs | K. Natori | Tokyo Inst. Tech. | Japan |
| J-6-3 | 9:45 | Body-biased steep-subthreshold-swing MOS (BS-MOS) with small hysteresis, off current, and drain voltage | K. Nishiguchi, A. Fujiwara | NTT Corp. | Japan |
| J-6-4 | 10:00 | Impacts of Diameter-Dependent Annealing in Silicon Nanowire MOSFETs | R. Wang, T. Yu, W. Ding, R. Hung | Peking Univ. | China |
| J-6-5 | 10:15 | Single-electron transport through a Germanium-Nanowire Quantum Dot | S. K. Shin, S. Huang, N. Fukata, K. Ishibashi | RIKEN, Tokyo Inst. of Tech., National Inst. for Materials Sci. | Japan |
| J-6-6 | 10:30 | A Theoretical Study of Electron Wave Function Penetration Effects on Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs | J. Hattori, S. Uno,N. Mori, K. Nakazato | Nagoya Univ., Osaka Univ., CREST-JST | Japan |
Session J-7 Nanowire Growth and Applications (Room 246, 11:15-12:15, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| J-7-1 | 11:15 | Al-doped Zinc Oxide Field Emitter Array Controlled by High-Voltage Poly-Si Thin Film Transistor | P. Y. Yang, J. L. Wang,W. C. Tsai, S. J. Wang, J. C. Lin, I. C. Lee, C. T. Chang, H. C. Cheng | National Chiao Tung Univ., Ming Chi Univ. of Technology, National Cheng Kung Univ., St. John's Univ. | Taiwan |
| J-7-2 | 11:30 | Nanoarchitecture Light Emitting Diode Microarrays Using Position-Controlled GaN/ZnO Coaxial Nanotube Heterostructures | C. H. Lee, J. Yoo, Y. J. Hong, J. Cho, Y. J. Kim, S. R. Jeon, J. H. Baek, G. C. Yi | Seoul National Univ., POSTECH, Korea Photonics Tech. Inst. | Korea |
| J-7-3 | 11:45 | Electrical Characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process | Y. Kohashi, T. Sato, K. Tomioka, S. Hara, T. Fukui, J. Motohisa | Hokkaido Univ., JST-PRESTO. | Japan |
| J-7-4 | 12:00 | Lateral GaAs nanowires with triangular and trapezoidal cross-sections grown on (311)B and (001) substrates | G. Zhang, K. Tateno,H. Gotoh, T. Sogawa | NTT Corp. | Japan |
| J-7-5 | 12:15 | C-V Characteristics and Analysis of Undoped Gate-All-Around Nanowire FET Array | R. H. Baek, C. K. Baek, S. H. Lee, S. D. Suk, M. Li, Y. Y. Yeoh, K. H. Yeo, D. W. Kim, J. S. Lee, D. M. Kim, Y. H. Jeong | POSTECH, Korea Institute for Advanced Study (KIAS), NCNT | Korea |
Session K-6 Quantum Dots (Room 222, 9:00-10:45, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-6-1 (Invited) | 9:00 | Quantum Dot Superlattice for High Efficiency Intermediate Band Solar Cell | Y. Okada | Univ. of Tokyo | Japan |
| K-6-2 | 9:30 | Energy transfer in multi-stacked InAs quantum dots | K. Akahane, N. Yamamoto, M. Naruse, T. Kawazoe, T. Yatsui, M. Ohtsu | National Inst of Information and Communications Tech., Univ. of Tokyo | Japan |
| K-6-3 | 9:45 | Enhanced Photoluminescence Properties from Self-Assembled InAs Surface Quantum Dots by Antimony Incorporation | C. H. Chiang, Y. H. Wu, M. C. Hsieh, C. H. Yang, J. F. Wang, Y. C. Chang, L. Chang, J. F. Chen | National Chiao Tung Univ. | Taiwan |
| K-6-4 | 10:00 | Structure changes caused by quenching of InAs/GaAs(001) quantum dots | M. Takahasi, | JAEA | Japan |
| K-6-5 | 10:15 | High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si | M. Deura, Y. Kondo, M. Takenaka, S. Takagi,Y. Shimogaki, Y. Nakano, M. Sugiyama, | Univ. of Tokyo | Japan |
| K-6-6 | 10:30 | Growth of InAs Quantum Dots with Various Charged States on a Wafer Utilizing Concentric Distribution | N. Kumagai, S. Ohkouchi, M. Shirane, Y. Igarashi, M. Nomura, Y. Ota, S. Yorozu, S. Iwamoto, Y. Arakawa, | Univ. of Tokyo, NEC Corp. | Japan |
Session K-7 Growth and Characterization of Nitrides (Room 222, 11:15-12:30, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-7-1 (Invited) | 11:15 | Droplet elimination process by radical beam irradiation for the growth of InN-based III-nitrides and its application to device structure | T. Yamaguchi | Ritsumeikan Univ. | Japan |
| K-7-2 | 11:45 | Reduction of S-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Its Comparative Study with Photoluminescence Spectroscopy | H. Nakamoto, F. Ishikawa, M. Kondow, Y. Oshima, A. Yabuchi, M. Mizuno, H. Araki, Y. Shirai | Osaka Univ., Kyoto Univ. | Japan |
| K-7-3 | 12:00 | Nucleus and Spiral Growth of GaN Studied by Selective-Area Metalorganic Vapor Phase Epitaxy | T. Akasaka, Y. Kobayashi,M. Kasu, | NTT Corp. | Japan |
| K-7-4 | 12:15 | Enhanced optical characteristics of light-emitting-diode by localized surface plasmon of Ag/SiO2 nanoparticles | L. W. Jang, T. Sahoo, D. S. Jo, J. W. Yoo, J. W. Jeon, S. M. Li, Y. H. Cho, I. H. Lee | Chonbuk National Univ., KAIST | Korea |
Session K-8 Si and Ge-bansed Materials and Devices (Room 222, 13:30-15:00, September 24) |
|||||
| Paper # | Start Time | Title | Authors | Affiliations | Country |
| K-8-1 | 13:30 | Very high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition | M. Myronov, K. Sawano, D. R. Leadley, Y. Shiraki | Univ. of Warwick, Tokyo City Univ. | UK |
| K-8-2 | 13:45 | Formation of Pyramidal-shaped Etch Pits on Germanium Surfaces Using Catalytic Reactions with Metallic Nanoparticles in Water | T. Kawase, K. Nishitani, K. Dei, J. Uchikoshi, M. Morita, K. Arima | Osaka Univ. | Japan |
| K-8-3 | 14:00 | Fabrication of defect-free and relaxed Ge-rich SGOI-wire structures for CMOS applications | M. Oda, Y. Moriyama, K. Ideda, Y. Kamimuta, T. Tezuka, | MIRAI-TOSHIBA | Japan |
| K-8-4 | 14:15 | Fabrication of Poly-Si TFT on Polycarbonate Substrate at Temperatures below 135oC | G. Nakagawa, N. Kawamoto, T. Imamura, Y. Tomizawa, T. Miyoshi, K. Tadatomo, T. Asano, | Kyushu Univ., Yamaguchi Univ., TEIJIN Ltd. | Japan |
| K-8-5 | 14:30 | Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization | S. Fujii, S. I. Kuroki, K. Kotani, T. Ito | Tohoku Univ. | Japan |
| K-8-6 | 14:45 | Epitaxial NiSi2 Buffer Technique for Fluoride Resonant Tunneling Devices on Si | K. Takahashi, Y. Yoshizumi,Y. Fukuoka, N. Saito, K. Tsutsui, | Tokyo Inst. of Tech. | Japan |