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COMMITTEES

Program Committee

Chair:

A. Toriumi (Univ. of Tokyo)

Vice-Chair:

Y. Hirayama (NTT)
K. Kim (Samsung Electronics)
H. Matsuoka (Hitachi)

Secretary:

T. Ichiki (Univ. of Tokyo)


Subcommittee Members:

[1] Advanced Gate Stack / Si Processing Science

Chair:

Y. Nara (Selete)

Members:

T. Aoyama (Fujitsu Labs.)
H. Hwang (Gwangju Inst. of Sci. & Tech.)
S. Miyazaki (Hiroshima Univ.)
B. Mizuno (UJT Lab.)
A. Sakai (Nagoya Univ.)
H. Satake (ASET)
K. Shiraishi (Univ. of Tsukuba)
Y. Tsunashima (Toshiba)
R. M. Wallace (Univ. of Texas at Dallas)
J. Yugami (Renesas)


[2] Characterization and Materials Engineering for Device Integration

Chair:

S. Ogawa (Matsushita Electric)

Members:

K. Char (Seoul National Univ.)
S. C. Chen (TSMC)
N. Hata (AIST)
M. Kodera (Ebara)
M. Matsuura (Renesas)
F. Mizuno (Meisei Univ.)
M. Nihei (Fujitsu Labs.)
T. Tatsumi (Sony)
K. Ueno (NEC)
T. Yoda (Toshiba)


[3] CMOS Devices / Device Physics

Chair:

K. Shibahara (Hiroshima Univ.)

Members:

D. Hisamoto (Hitachi)
K. Kurimoto (Matsushita Electric)
H. C. Lin (National Chiao Tung Univ.)
Y. Momiyama (Fujitsu)
H. Oda (Renesas)
M. Ogawa (Kobe Univ.)
K. Ohuchi (Toshiba)
K. Takeuchi (NEC)
J. C. S. Woo (UCLA)
C. C. Wu (TSMC)


[4] Advanced Memory Technology

Chair:

A. Nitayama (Toshiba)

Members:

I. Asano (Elpida)
T. Eshita (Fujitsu)
C. Hsu (eMemory Tech.)
N. Ishiwata (NEC)
H. S. Jeong (Samsung Electronics)
T. Kobayashi (Hitachi)
Y. Ohji (Renesas)
Y. Yamauchi (Sharp)


[5] Advanced Circuits and Systems

Chair:

H. Kobayashi (Gunma Univ.)

Members:

R. Fujimoto (Toshiba)
T. Hamasaki (Texas Instruments Japan)
W. H. Ki (Hong Kong Univ. of Sci. & Tech.)
T. Komuro (Agilent Technologies International Japan)
K. Masu (Tokyo Tech.)
M. Mizuno (NEC)
H. Yamauchi (Sanyo Electric)


[6] Compound Semiconductor Circuits, Electron Devices and Device Physics

Chair:

M. Kuzuhara (Univ. of Fukui)

Members:

Y.-J. Chan (National Central Univ.)
T. Enoki (NTT)
T. Hashizume (Hokkaido Univ.)
R. Hattori (Ion Engineering Research Inst.)
S. Kuroda (Eudina Devices)
K. Maezawa (Nagoya Univ.)
A. Nakagawa (New Japan Radio)
Y. Ohno (Univ. of Tokushima)
S. Tanaka (NEC)
T. Tanaka (Matsushita Electric)


[7] Photonic Devices and Device Physics

Chair:

M. Sugawara (Univ. of Tokyo)

Members:

C. Chang-Hasnain (Univ. of California)
M. Ezaki (Toshiba)
T. Hatta (Mitsubishi Electric)
K. Komori (AIST)
Y. Lee (Hitachi)
S. Noda (Kyoto Univ.)
M. Tokushima (NEC)
O. Wada (Kobe Univ.)


[8] Advanced Material Synthesis and Crystal Growth Technology

Chair:

H. Yamaguchi (NTT)

Members:

H. Asahi (Osaka Univ.)
Y. Awano (Fujitsu)
T. Fukui (Hokkaido Univ.)
Y. Nanishi (Ritsumeikan Univ.)
R. Notzel (Eindhoven Univ. of Tech.)
Y. Ochiai (NEC)
S. Shimomura (Osaka Univ.)
M. Tanaka (Univ. of Tokyo)
K. Yamaguchi (Univ. of Electro-Communications)


[9] Physics and Applications of Novel Functional Materials and Devices

Chair:

Y. Takahashi (Hokkaido Univ.)

Members:

T. Fujisawa (NTT)
K. Ishibashi (RIKEN)
K. Matsumoto (Osaka Univ.)
H. Mizuta (Tokyo Tech.)
J. Motohisa (Hokkaido Univ.)
Y. Nakamura (NEC)
Y. Ohno (Tohoku Univ.)
B. G. Park (Seoul National Univ.)
M. Tabe (Shizuoka Univ.)
T. Usuki (Fujitsu)


[10] Organic Materials Science, Device Physics, and Applications

Chair:

K. Kudo (Chiba Univ.)

Members:

M. Iwamoto (Tokyo Tech.)
T. Kamata (AIST)
K. Kato (Niigata Univ.)
Y. Ohmori (Osaka Univ.)
Y. W. Park (Seoul National Univ.)
T. Sano (Sanyo Electric)
A. Sugimura (Osaka Sangyo Univ.)
H. Usui (Tokyo Univ. of Agri. & Tech.)


[11] Micro / Nano Electromechanical and Bio-Systems

Chair:

H. Tabata (Osaka Univ.)

Members:

S. A. Contera (Univ. of Oxford)
T. Nishimoto (Shimadzu)
H. Oana (Univ. of Tokyo)
T. Ono (Tohoku Univ.)
K. Sawada (Toyohashi Univ. of Tech.)
H. Sugihara (Matsushita Electric)
Y. Takamura (JAIST)
Y. Yoshino (Murata Mfg.)


Persons in charge of online paper submission and registration:

M. Nagata (Kobe Univ.)
Y. Kamakura (Osaka Univ.)