Core Areas

Area 1 Advanced LSI Processing & Materials Science

Chair : S. Migita, AIST

Papers related to advanced LSI process technologies and science are solicited, including:
(1) Gate stack and FET processes for Si, Ge, III-V, and emerging materials of high mobility channel, steep-slope transistor, and etc; (2) Science and characterizations of nano electronic materials and their interfaces, including memory applications; (3) Reliability physics and modeling; (4) Theoretical and simulation studies for device designs.

Area 2 Interconnect Technologies and 3D Integration / Sensor / MEMS Integration / Materials and Characterization

Chair : H. Ishii, Toyohashi Univ. of Tech

Papers related to interconnect materials, processes and devices are solicited including (1) TSV, microbump, wafer level packaging, 3D integration and, Sensor/MEMS integration; (2) Cu/low-k and packaging; (3) RF or high-speed operation dvice/MMIC integration; (4) optical interconnect; (5) printable, molecular, and carbon-based interconnects; (6) characterization; (7) reliability phenomena and their physics.
Joint session: Area 5, 7, 10, and 13

Area 3 CMOS Devices / Device Physics

Chair : M. Masahara, AIST

Papers related to advanced CMOS device technologies and physics are solicited, including: (1) advanced or extended CMOS devices; (2) energy efficiency optimization technologies including performance-boosting, subthreshold-slope steepening, etc; (3) physics, modeling or simulation of emerging transistors; (4) reliability assessment; (5) circuit-design interaction; (6) manufacturing and yield sciences.

Area 4 Advanced Memory Technology

Chair : K. Hamada, Micron Memory Japan Inc.

Papers related to advanced memory technology are solicited, including: (1) any volatile or nonvolatile memory devices; (2) memory-function related circuit elements; (3) memory device physics, modeling, simulation; (4) process and characterization; (5) materials, reliability or quality; (6) novel applications.
Joint session: Area 5, 9, 12 on Advanced Circuits & Systems, Physics and Applications of Novel Functional Devices and Materials, and Spintronics Materials and Devices.

Area 5 Advanced Circuits and Systems

Chair : Y. Mita, Univ. of Tokyo

Papers related to advanced circuits and systems are solicited, including: (1) digital, analog, or mixed-signal circuits; (2) high-speed and high-frequency communication circuits; (3) SoC or SiP technology; (4) device, interface or interconnect design, modeling and related technology; (5) circuits, systems, and interfaces for image sensors, smart sensors, memory or MEMS devices, including RF MEMS.
Joint session: Area 4, 10, 11, 12 on Memory, Organic Circuits, and MEMS.

Area 6 Compound Semiconductor Electron Devices & Related Technologies

Chair : N. Hara, Fujitsu Labs. Ltd.

Papers related to compound semiconductor electron devices are solicited, including: (1) FETs, HFETs, HEMTs, HBTs, or other novel devices; (2) high-voltage or high-temperature electron devices; (3) high-speed devices and ICs; (4) advanced sensors; (5) transparent TFTs; (6) device physics; (7) process and characterization; (8) stability and reliability; (9) novel applications.
Joint session: Area 14 on Power Devices, and Area 8 on Oxide Devices.

Area 7 Photonic Devices and Related Technologies

Chair : Y. Ishikawa, Univ. of Tokyo

Papers related to photonic devices are solicited, including: (1) lasers, LEDs, photodetectors, optical modulators, optical amplifiers, optical isolators, optical waveguides, wavelength filters and other photonic devices; (2) photonic/optoelectronic integration such as Si photonics; (3) optical interconnects; (4) optical signal processing; (5) optical sensing, (6) device physics; (7) materials and process technologies; (8) implementation and packaging; (9) novel optical phenomena and applications.
Joint session : Area 2 and 12

Area 8 Advanced Material Synthesis and Crystal Growth Technology

Chair : T. Suemasu, Univ. of Tsukuba

Papers related to advanced materials and structures are solicited, including: (1) novel fabrication methods; (2) materials including silicon-related materials, III-V compounds with nitrides, carbon nanomaterials, functional oxides; (3) nanowires and nanoparticles; (4) self-assembly and nanoscale structures; (5) characterization.

Area 9 Physics and Applications of Novel Functional Devices and Materials

Chair : T. Machida, Univ. of Tokyo

Papers related to new physics and its applications in novel materials and nanodevices are solicited, including: (1) quantum-mechanical phenomena in low-dimensional structures such as quantum dots, nanowires, and two-dimensional electron systems; (2) emerging material systems such as graphene, 2D crystals, and topological insulators; (3) nanodevices utilizing single electron, exciton, photon, plasmon, and other quanta.

Area 10 Organic Materials Science, Device Physics, and Applications

Chair : K. Fujita, Univ. of Kyushu

Papers related to organic materials are solicited, including: (1) organic transistors and circuits; (2) organic light emitting devices; (3) organic diodes, photodetectors or photovoltaics; (4) sensors; (5)molecular electronics; (6) organic-inorganic hybrid systems; (7)interfacial phenomena; (8) process and characterization.
Joint session: Area 11 on Organic Bio-electronics and Area 15 on Organic Solar Cells.

Strategic Areas

Area 11 Sensors and Materials for Biology, Chemistry and Medicine

Chair : J. Ohta, NAIST

Papers related to biological, chemical and medical applications are solicited, including: (1) MEMS/NEMS, bio-CMOS, and other chemical/biomedical related devices; (2) µ-TAS and LOC; (3) chemical and medical sensors; (4) imaging and spectroscopy systems; (5) sensors and materials in biological environments.
Joint session: Area 5 on Circuit & Systems for Biomedical Applications and Area 10 on Organic Bio-electronics.

Area 12 Spintronics Materials and Devices

Chair : Y. Suzuki, Osaka Univ.

Papers related to spin-related physics and spintronic materials are solicited, including (1) spin transport; (2) spin-based devices; (3) interaction with light and high-frequency electromagnetic waves; (4) novel material systems.
Joint session: Area 4 on Memory, 5 on Circuit & System, and 7 on Photonics.

Area 13 Applications of Nanotubes, Nanowires, and Graphene

Chair : Y. Ohno, Nagoya Univ.

Papers related to nanotubes, nanowires, graphene, or 2D materials such as MoS2 are solicited, including (1) active electronic and optical devices; (2) sensors; (3) passive elements; (4) nanomechanics; (5) materials science; (6) device physics; (7) characterization; (8) fabrication methods; (9) theoretical calculation.
Joint session: Areas 8 and 9 on Graphene and Nanowires.

Area 14 Power Devices and Materials

Chair : H. Umezawa, AIST

Papers related to power devices, materials (Si/SiC/GaN/Ga2O3/diamond) and applications are solicited, including: (1) materials and physical properties; (2) process and characterization; (3) device physics and simulation/modeling; (4) packaging, module and interconnect technologies; (5) novel applications.
Joint session: Area 1 and 6 on SiC/SiO2 interface and Compound Semiconductors.

Area 15 Photovoltaic Materials and Devices

Chair : M. Isomura, Tokai Univ.

Papers related to photovoltaic materials and devices are solicited, including: (1) materials; (2) process and characterization; (3) device physics and simulation/modeling; (4) module technologies, including encapsulation and interconnections.
Joint session: Area 10 on Organic Solar Cells.