Japanese Journal of Applied Physics
Vol. 55, No. 4S, Apr. 2016
: Solid State Devices and Materials

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The papers in this special issue are open access for one year from the publication.

This special issue includes a collection of papers presented at the 2015 International Conference on Solid State Devices and Materials (SSDM2015) held at Sapporo Convention Center, Sapporo, Japan, from September 27 to 30, 2015. The conference was sponsored by the Japan Society of Applied Physics. The purpose of the conference is to bring together scientists and engineers active in the forefront of solid state devices and materials development and the promotion of science and industry related to solid-state electronics. SSDM2015 covered research and development of significant innovation/improvement of devices and materials, and processing technologies. The program of 2015 featured 3 plenary talks, 60 invited papers, 266 contributed oral papers, 258 posters, and 32 late news papers. The conference topics are listed below:

  • 1) Advanced LSI Processing and Materials Science
  • 2) Interconnect Technologies and 3D Integration/ Sensor/ MEMS Integration/ Materials and Characterization
  • 3) CMOS Devices / Device Physics
  • 4) Advanced Memory Technology
  • 5) Advanced Circuits and Systems
  • 6) Compound Semiconductor Electron Devices and Related Technologies
  • 7) Photonic Devices and Related Technologies
  • 8) Advanced Material Synthesis and Crystal Growth Technology
  • 9) Physics and Applications of Novel Functional Devices and Materials
  • 10)Organic Materials Science, Device Physics, and Applications
  • 11) Sensors and Materials for Biology, Chemistry and Medicine
  • 12) Spintronics Materials and Devices
  • 13) Applications of Nanotubes, Nanowires, and Graphene
  • 14) Power Devices and Materials
  • 15) Photovoltaic Materials and Devices

This special issue, published in April, 2016, includes papers submitted to the special issue as review papers, regular papers and brief notes, and accepted in time for publication through the normal reviewing process of the Japanese Journal of Applied Physics (JJAP). We sincerely hope that readers who are working in the field of research and development of advanced solid state devices and materials will find this special issue interesting and useful.


  • Koji Kita (University of Tokyo)
  • Satoshi Iwamoto (University of Tokyo)
  • Seiichiro Higashi (Hiroshima University)
  • Ippei Akita (Toyohashi University of Technology)
  • Masayuki Fujita (Osaka University)
  • Hiroshi Fukuda (NTT)
  • Yuzo Fukuzaki (SONY)
  • Koji Hamada (Micron Memory Japan)
  • Naoki Hara (FUJITSU)
  • Shunta Harada (Nagoya University)
  • Dai Hisamoto (HITACHI)
  • Kenchi Ito (Tohoku University)
  • Kuniyuki Kakushima (Tokyo Institute of Technology)
  • Kenichi Kawaguchi (FUJITSU)
  • Yusuke Kawaguchi (TOSHIBA)
  • Akihiko Kikuchi (Sophia University)
  • Kentaro Kinoshita (Tottori University)
  • Koichi Kokubun (TOSHIBA)
  • Yasuyoshi Kurokawa (Nagoya University)
  • Tomoki Machida (University of Tokyo)
  • Toshiharu Makino (National Institute of Advanced Industrial Science and Technology)
  • Takahiro Nagata (National Institute for Materials Science)
  • Osamu Nakatsuka (Nagoya University)
  • Junsaku Nitta (Tohoku University)
  • Keisuke Ohdaira (Japan Advanced Institute of Science and Technology)
  • Jun Ohta (Nara Institute of Science and Technology)
  • Tamotu Okamoto (National Institute of Technology, Kisarazu College)
  • Hiromi Oohashi (NTT)
  • Hitoshi Saito (FUJITSU)
  • Toshitsugu Sakamoto (LEAP)
  • Toshiya Sakata (University of Tokyo)
  • Yoshitaka Sasago (HITACHI)
  • Toshihiro Shimada (Hokkaido University)
  • Takashi Suemasu (University of Tsukuba)
  • Nobuyuki Sugii (HITACHI)
  • Naoyuki Sugiyama (TORAY)
  • Kazuo Sukegawa (SOCIONEXT)
  • Toshi-kazu Suzuki (Japan Advanced Institute of Science and Technology)
  • Tetsuya Taima (Kanazawa University)
  • Hidekuni Takao (Kagawa University)
  • Tetsufumi Tanamoto (TOSHIBA)
  • Kazuhiko Yamamoto (TOSHIBA)