Short Course

Short Courses for young researchers and students, will be held on September 19, 2017, the first day of SSDM2017.

A separate fee is required to attend the Short Course.

A Artificial Intelligence (AI) for the Application of Solid State Devices and Materials

Organizer: Kenji Shiraishi Nagoya Univ.

Based on the recent rapid development of artificial Intelligence (AI), it is applicable to material design (Materials Informatics), self-driving and so on. In this short course, we focus of recent status of the AI application of Solid state devices and materials. Moreover, this short course includes basics of AI. We encourage beginners of AI to join our short course.

September 19, 2017
  • 13:00-14:30
    “Basics of Artificial Intelligence -Machine Learning and Data Analysis-”
    Kento Ohtani
    (Nagoya University / Human Dataware Lab. Co., Ltd., Japan)
  • 14:30-15:20
    “What We Expect from Materials Informatics”
    Shinji Tsuneyuki
    (Univ. of Tokyo, Japan)
  • --- Break (20 min) ---
  • 15:40-16:30
    “Trial of Informatics in Crystal Growth -SiC Solution Growth-”
    Toru Ujihara
    (Nagoya Univ., Japan)
  • 16:30-17:20
    “Possibilities and Expectation of Materials Informatics for Materials and Device R&D”
    Shigetaka Tomiya
    (Sony Corp., Japan)

B Si-related Technology

Organizer: Masato Koyama Toshiba Corp.

In this short course, we will provide 5 lectures on Si-related devices, materials and characterization technology. It includes present status of CMOS scaling and its future, high performance/low power novel MOS devices, fundamental understanding of dielectric interface systems, deeply scaled devices and its application, ultimate nano electronic devices using Si and advanced characterization of novel devices. All the participants at SSDM 2017 are welcome.

September 19, 2017
  • 13:00-13:50
    “CMOS Scaling and Integration: Present Status and Roadmap”
    Toshiro Hiramoto
    (Univ. of Tokyo, Japan)
  • 13:50-14:40
    “Advanced MOS device technology”
    Shinichi Takagi
    (Univ. of Tokyo, Japan)
  • --- Break (20 min) ---
  • 15:00-15:50
    “Formation Mechanisms of Gate Oxide Films”
    Takanobu Watanabe
    (Waseda Univ., Japan)
  • 15:50-16:40
    “Challenges in Si device and process technology for dimensional and voltage scaling”
    Takashi Matsukawa
    (AIST, Japan)
  • 16:40-17:30
    “Future Si functional nano-devices and their important analyzing technologies”
    Yasuo Takahashi
    (Hokkaido Univ., Japan)