Invited Speakers

Area 1 Advanced CMOS: Material Fundamentals, Process Science and Device Physics

• N-3-01 Studies of Ferroelectric HfO₂ Materials before Memory and Logic Applications Shinji Migita (AIST, Japan)
• N-5-01 FinFET Extension towards N3 and Beyond - Local Fin Trimming Toshihiko Miyashita (Applied Materials, Inc., USA)
• N-7-01 New Horizons of Topological Material Science Shuichi Murakami (Tokyo Tech, Japan)
• N-1-01 Enabling Ultra Low-Vmin and Low-Leakage Operation in FDSOI High-density SRAMs Rossella Ranica (STMicroelectronics, Switzerland)
• N-4-01 Recent progress in sequential 3D device stacking: Low temperature reliable top tier junction-less devices on 300mm wafers. Anne Vandooren (IMEC, Belgium)

Area 2 Advanced / Emerging Memories and New Applications

• H-3-01 Ferroelectric HfO₂ for Memory Applications and Unconventional Computing Halid Mulaosmanovic (NaMLab gGmbH, Germany)
• H-7-03 Engineering of Ovonic Threshold Switching Selector: A Link from the Material Properties to the Electrical Performances Anthonin Verdy (CEA-Leti, France)
• H-5-01 Next Generation Memory System in Data-centric Computing Masafumi Takahashi (Toshiba Memory Corp., Japan)
• H-7-01 Memory functions of magnetic skyrmion Wataru Koshibae (RIKEN, Japan)
• H-1-01 Nanofilaments in Ta-O ReRAM Bit Array Fabricated Using 40 nm CMOS Process Masashi Arita (Hokkaido Univ., Japan)
• H-6-01 Neuromorphic Technology Using Gated Schottky Diodes with Charge Trap Function Jong-Ho Lee (Seoul National Univ., Korea)

Area 3 Interconnect / 3D Integrations / MEMS

• J-2-01 Size-Reduction of HBW System using WOW Bumpless TSV Interconnects Takayuki Ohba (Tokyo Tech, Japan)
• J-1-01 Electromigration scaling limits of copper interconnects Olalla Varela Pedreira (imec, Belgium)
• J-6-01 Metallization Technology for High Current Density and High Temperature Operation for Power Modules Kazuhiko Sugiura (DENSO CORP., Japan)
• J-1-02 Opportunities and Challenges of Atom Switch for Next AI Hardware Munehiro Tada (NEC Corp., Japan)
• J-5-01 Wafer to Wafer Stacking and Hybrid Bonding for Heterogeneous Integration Kenji Takahashi (AIST, Japan)

Area 4 Power Devices / High-speed Devices, and Materials

• K-1-01 Development of GaN Power Integrated Circuits Jin Wei (Hong Kong Univ. of Sci. and Tech., Hong Kong)
• K-7-01 GaN Wet Etching Process for Power and RF Devices Fumimasa Horikiri (SCIOCS COMPANY LTD., Japan)
• K-6-01 Carrier Scattering Mechanism in SiC Trench MOSFETs Katsuhiro Kutsuki (Toyota Central R&D Labs., Inc., Japan)
• K-4-01 Surface Activated Bonding of SiC/Diamond for Thermal Management of High-Output Power GaN HEMTs Yuichi Minoura (Fujitsu Labs. Ltd., Japan)
• M-2-03 Development of α-Ga₂O₃ Power Devices by MIST EPITAXY^® Takashi Shinohe (FLOSFIA Inc., Japan)
• K-5-01 Advances in inversion channel diamond MOSFETs Norio Tokuda (Kanazawa Univ./AIST, Japan)
• K-3-01 State-of-the Art IGBT and Development towards Higher Operation Temperature and Power Ratings Jan Vobecky (ABB Switzerland Ltd, Semiconductors, Switzerland)

Area 5 Photonics: Devices, Integration and Related Technology

• B-5-01 Graphene-Based Optical Modulators for Next Generation Datacom Chiara Alessandri (IMEC, Belgium)
• B-2-01 Ultra-high bandwidth and low-drive voltage InP Mach-Zehnder modulators Yoshihiro Ogiso (NTT Corp., Japan)
• B-1-01 Hybrid integration of quantum/classical light sources on Si using transfer printing Yasutomo Ota (Univ. of Tokyo, Japan)
• B-3-01 On-chip coherent LIDAR for imaging:
  progress and current limitations Aude Martin (Thales Res. and Tech., France)

Area 6 Photovoltaic / Energy Harvesting / Battery-related Technology

• C-3-01 Atomic Layer Deposited Thin Film for Low-Temperature Solid Oxide Fuel Cell Electrolyte Jihwan An (Seoul National Univ. of Sci. and Tech., Korea)
• C-4-01 Percutaneous Electrical Stimulation for Virtual Reality Kazuma Aoyama (Univ. of Tokyo, Japan)
• C-6-01 Liquid phase crystalline Silicon on Glass: A pathway to high efficiency thin film solar cells Daniel Amkreutz (Helmholtz-Zentrum Berlin, Germany)
• C-2-01 Low cost carbon-based printed perovskite solar cell technology
  An opportunity for entire world Syed Ghufran Hashmi (Aalto Univ., Finland)
• C-5-01 Recent progress on HVPE-grown III-V solar cells with extremely high growth rates Ryuji Oshima (AIST, Japan)

Area 7 Organic / Molecular / Bio-electronics

• A-2-01 Processing rules and materials in high-resolution printing for electronic devices Yasuyuki Kusaka (AIST, Japan)
• A-6-01 Applicable p-Type Organic Semiconducting Materials Toshihiro Okamoto (Univ. of Tokyo, Japan)
• A-1-01 Development of New π-Conjugated Polymers for Efficient Organic Photovoltaics Itaru Osaka (Hiroshima Univ., Japan)
• A-5-01 Wearable Respiratory Sensor Measuring Capacitance Constructed Across Skin Allowing Walking Motion Minoru Sasaki (Toyota Technological Inst., Japan)
• A-4-01 Intelligent biophotonic imaging for clinical applications Chia-Wei Sun (National Chiao Tung Univ., Taiwan)
• A-3-01 DNA detection by Electrochemical Impedance Spectroscopy Ichirou Yamashita (Osaka Univ., Japan)

Area 8 Low Dimensional Devices and Materials

• D-4-01 Artificial Synapses based on MoS₂ Memtransistor for Neuromorphic Computing Kah-Wee Ang (National Univ. of Singapore, Singapore)
• D-3-01 Dynamical Studies of Hot Carriers in 2D Semiconductors: Intrinsic vs. Extrinsic Processes Jonathan Bird (Univ. at Buffalo/The State Univ. of New York, USA)
• D-2-01 Scalable Nanomanufacturing Processes for High Performance Transistor Inks Michael A. Filler (Georgia Inst. of Tech., USA)
• D-1-01 Continue the transistor scaling with 2D materials: Challenges and Perspective Lain-Jong Li (TSMC, Taiwan)
• D-5-01 Development of Quantum Dot Lasers and their Applications Kenichi Nishi (QD Laser, Inc., Japan)
• D-2-02 Semiconductor InSb Nanolayers: A New Platform for Developments of Quantum and Topological Devices Hongqi Xu (Peking Univ., China)

Area 9 Novel Functional / Quantum / Spintronic Devices and Materials

• E-5-01 Flexible spintronics devices for mechanical sensing Daichi Chiba (Osaka Univ., Japan)
• E-6-01 Spin-orbit torque and neural network Shunsuke Fukami (Tohoku Univ., Japan)
• E-2-01 300 mm silicon quantum computing: A Silicon-Based Platform for Quantum Computing Device Technologies Stefan Kubicek (IMEC, Belgium)
• E-4-01 Neuromorphic computing based on Highly reliable Analog ReRAM by filament control Takumi Mikawa (Panasonic Semiconductor Solutions Co., Ltd., Japan)
• E-1-01 Engineering superconducting quantum circuits Yasunobu Nakamura (Univ. of Tokyo, Japan)

Area 10 Thin Film Electronics: Oxide, Non-single Crystalline and Novel Process

• G-6-01 Controlled CVD Growth of High-Quality 2D Materials and Their Heterostructures for Device Applications Hiroki Ago (Kyushu Univ., Japan)
• G-2-01 Selective Laser Annealing Technology for LTPS Thin Film Transistors Fabrications Tetsuya Goto (Tohoku Univ., Japan)
• G-6-02 Epitaxial bridging with nanocluster assisted film growth under the mesoplasma condition Makoto Kambara (Univ. of Tokyo, Japan)
• G-1-01 Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI Kiyoshi Kato (Semiconductor Energy Lab. Co. Ltd., Japan)

Area 11 Advanced Materials Synthesis, Crystal Growth and Characterization

• F-2-01 Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy Catherine Bougerol (CNRS, France)
• F-1-01 Nanoscale 3-dimensional characterization of wide bandgap power and microdevices Leonard J. Brillson (The Ohio State Univ., USA)
• F-1-02 Valence-selective photoelectron holography and cutting-edge two-dimensional angular-distribution analyzer Hiroshi Daimon (Toyota Riken, Japan)
• F-2-02 Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities Ryuji Katayama (Osaka Univ., Japan)
• F-4-01 2D Oxide and Hydroxide Nanosheets: Synthesis, Layer-by-Layer Assembly and Function Design Takayoshi Sasaki (NIMS, Japan)

Special Advanced Circuits/Systems Interacting with Innovative Devices & Materials

Topical session 1: Information sensing devices and systems

Overview: In the internet-of-things (IoT) era, our life is leveraged by large number of sensing devices and systems, which capture big data through optical, chemical, bio-chemical, electrochemical, magnetic, acoustic and mechanical means. Sensing vital signs of human and other living things, information for efficient and secure automation in transportation and manufacturing scenes with artificial intelligence, conditions of natural environment and agricultural fields are full of challenges and opportunities for those sensing devices and systems. In this topic, world leading researchers will present the fundamentals and their latest works in this field.

• M-1-01 Trillion-Node Engine: Open-Innovation IoT/CPS Platform
  — Pioneering Future of IoT for Everyone, by Everyone — Takayasu Sakurai (Univ. of Tokyo, Japan)
• M-7-01 A New Flexible Photoplethysmography (PPG) Sensor Patch for Continuous Measurement of Blood Flow Volume and Pressure based on AI algorithms Paul C.-P. Chao (National Chiao Tung Univ., Taiwan)
• M-7-02 Wearable Vital Sign Sensing Technology
  based on FBG Sensor System Hiroaki Ishizawa (Shinshu Univ., Japan)
• M-3-01 Integrated Hybrid MEMS Hydrogen Sensor with high sensitivity and wide dynamic range Hiroaki Yamazaki (Toshiba Corp., Japan)
• M-1-02 Energy-Efficient Body Area Network Transceiver Using Body-Coupled Communication Jerald Yoo (National Univ. of Singapore, Singapore)

Topical session 2: Energy-efficient power electronics

Overview: Energy efficient systems must be established for the sustainable world. High efficiency and compact electronics for electric power conversion, conditioning/controlling as well as energy generation/harvesting/storing will innovate infrastructure of our society, automotive and train systems in addition to IoT devices. Innovative co-design of advanced wide bandgap or Si devices, packages, circuits and systems including controlling methods is essential for low loss and high power density systems and green future. Research activities to directly link between innovative devices and circuits/systems leveraging the full potential of material characteristics will be covered by invited speakers from industry and academia.

• M-2-01 Imbalanced Voltage Analysis of Series-connected Active Power Semiconductor Devices Method in Power Electronics Systems for Automotive Applications Masayoshi Yamamoto (Nagoya Univ., Japan)
• M-5-01 High-efficiency Wireless Power Transfer System Huang-Jen Chiu (National Taiwan Univ. of Sci. and Tech., Taiwan)
• M-6-02 Compact Modeling and Circuit Simulation for High-Power Devices Dondee Navarro (Hiroshima Univ., Japan)
• M-6-01 Packaging of SiC power device for miniaturization of power electronics system - fast switching operation and thermal management - Tsuyoshi Funaki (Osaka Univ., Japan)
• M-2-02 Overcoming Barriers to the Adoption of WBG Semiconductors for Power Electronics and a more Electric Future Isik C. Kizilyalli (U.S. Department of Energy, USA)