H. Ueda (Tokyo Electron Technology Solutions Ltd.)
J. Wada (Kioxia Corp.)
International Advisory Committee
Members
G. Declerck(Board Member, imec International / Professor Emeritus, KULeuven)
L. Esaki(President, Yokohama University of Pharmacy / Chairman, The Science and Technology Promotion Foundation of Ibaraki)
D. L. Kwong(Executive Director, Institute for Infocomm Research / Executive Director, Institute of Microelectronics / Agency for Science, Technology and Research)
Y. Nishi(Professor Emeritus, Stanford University / Project Professor, Kyoto Institute of Technology)
K. H. Ploog(Director (retired), Paul Drude Institute for Solid State Electronics)
T. Sugano(Professor Emeritus, The University of Tokyo)
K. Takahashi(Professor Emeritus, Tokyo Institute of Technology)
Steering Committee
Chair
J. Motohisa(Hokkaido Univ.)
Vice-Chair
M. Sugiyama(Univ. of Tokyo)
Secretary
M. Akazawa(Hokkaido Univ.)
K. Tomioka(Hokkaido Univ.)
Members
M. Akai(Osaka Univ. / Hokkaido Univ.)
M. Arita(Hokkaido Univ.)
S. Hiura(Hokkaido Univ.)
M. Ikebe(Hokkaido Univ.)
R. Kaji(Hokkaido Univ.)
H. Ohta(Hokkaido Univ.)
H. Sasakura(Hokkaido Univ.)
T. Sato(Hokkaido Univ.)
M. Takenaka(Univ. of Tokyo)
Y. Toda(Hokkaido Univ.)
T. Uemura(Hokkaido Univ.)
M. Yamanouchi(Hokkaido Univ.)
Program Committee
Chair
Y. Miyamoto(Tokyo Tech)
Vice-Chair
H. Wakabayashi(Tokyo Tech)
F. Boeuf(STMicroelectronics)
Secretary
N. Nishiyama (Tokyo Tech)
T. Hosoi (Kwansei Gakuin Univ.)
K. Nishiguchi (NTT Basic Res. Labs.)
JJAP Special Issues Editors
O. Nakatsuka (Nagoya Univ.)
M. Takenaka (Univ. of Tokyo)
K. Nagashio (Univ. of Tokyo)
Area 1
Chair
M. Kobayashi(Univ. of Tokyo)
Vice-Chair
H. Oishi(Sony Semiconductor Solutions Corp.)
F.L. Yang(Academia Sinica)
Members
F. Andrieu (CEA-Leti)
S. Cho (Gachon Univ.)
K. Goto (TSMC)
R. Huang (Peking Univ.)
H. Itokawa (KIOXIA Corp.)
H. Kageshima (Shimane Univ.)
C. Lee (Zhejiang Univ.)
M.H. Liao (National Taiwan Univ.)
T. Matsukawa (AIST)
N. Mise (Hitachi High-Tech Corp.)
S. Mochizuki (IBM Research)
G. Nakamura (Tokyo Electron Ltd. )
N. Planes (STMICROELECTRONICS)
S. Souma (Kobe Univ.)
P. Su (NYCU)
S. N. Takeda (NAIST)
A. Veloso (IMEC)
Y. Wang (Renesas Electronics Corp.)
K. Yamamoto (Kyushu Univ.)
Area 2
Chair
N. Takaura(Hitachi, Ltd.)
Vice-Chair
N. Banno(NanoBridge Semiconductor, Inc.)
S. Jeon(KAIST)
Members
L. Grenouillet (CEA-LETI)
A. Himeno (Panasonic Corp.)
Y. Jono (Micron Japan, Ltd.)
K. Kinoshita (Tokyo Univ. of Science)
M.H. Lee (Macronix International Co., Ltd.)
H. Lim (Samsung Electronics)
H. Mulaosmanovic (NaMLab gGmbH)
H. Naganuma (Tohoku Univ.)
M. Nakabayashi (FUJITSU SEMICONDUCTOR MEMORY SOLUTION Ltd.)
H. Sasaki (MIRISE Technologies Corp.)
W.T. Sun (eMemory Technology Inc.)
K. Yamamoto (KIOXIA Corp.)
Area 3
Chair
K. Shiojima(Univ. of Fukui)
Vice-Chair
T. Saito(Osaka Prefecture Univ.)
M.B. Takeyama(Kitami Inst. of Tech.)
J.D. Messemaeker(IMEC)
Members
X. Gu (ASM)
Y. Kashiwagi (Osaka Research Inst. of Industrial Sci. and Tech.)
T. Minari (NIMS)
T. Nogami (IBM Research)
J.M. Song (National Chung Hsing Univ.)
M. Ueki (Sony Semiconductor Manufacturing Corp.)
A. Yamaguchi (Univ. of Hyogo)
Area 4
Chair
K. Tsuda(Toshiba Infrastructure Systems & Solutions Corp.)
Vice-Chair
H. Watanabe(Osaka Univ.)
S. Suzuki(Tokyo Tech)
K.Y. Lee(National Taiwan Univ.)
Members
C. Bolognesi (ETH Zurich)
H. Kawarada (Waseda Univ.)
H. Kim (Hongik Univ.)
H. Matsuzaki (NTT Device Tech. Labs.)
S. Ohmagari (AIST)
H. Okumura (Tsukuba Univ.)
Y. Onozawa (Fuji Electric Co., Ltd.)
S. Ozaki (Fujitsu Labs. Ltd.)
M. Sometani (AIST)
T. Sugiyama (Toshiba Electronic Device & Storage Corp.)
T. Suzuki (JAIST)
T. Terashima (Mitsubishi Electric Corporation Power Device Works)
N. Watanabe (Hitachi, Ltd.)
M. Yanagihara (Rohm Co., Ltd.)
Y. Yao (Japan Fine Ceramics Center)
Q. Zhou (Univ. of Electronic Sci. and Tech.)
Area 5
Chair
F. Boeuf(STMicroelectronics)
Vice-Chair
S. Iwamoto(Univ. of Tokyo)
N. Ozaki(Wakayama Univ.)
Members
M.D. Birowosuto (Nanyang Technological Univ.)
T. Hamaguchi (Sony Corp.)
K. Hassan (CEA-LETI)
T. Katsuyama (Sumitomo Electric Industries, Ltd.)
U. Koch (ETH Zurich)
Y.J. Lu (Academia Sinica)
H. Ono (PETRA)
M. Shirao (Mitsubishi Electric Corp.)
K. Suzuki (AIST)
X. Xu (NTT Corp.)
Area 6
Chair
Y. Kurokawa(Nagoya Univ.)
Vice-Chair
T. Tayagaki(AIST)
C.W. Chu(Academia Sinica)
Members
H. Araki (National Inst. of Tech., Nagaoka College)
M. Chikamatsu (AIST)
K. Gotoh (Nagoya Univ.)
L. Hong(TECRO)
T. Horiuchi (Ricoh)
T. Hoshii (Tokyo Tech)
S. Ishizuka (AIST)
S. Kato (Nagoya Inst. of Tech.)
A. Limmanee (NSTDA)
M. Matsui (Kobe Univ.)
M. Motoyama (Nagoya Univ.)
N. Shibayama (Toin Univ. of Yokohama)
H. Shinohara (Waseda Univ.)
S. Shiraki (Nippon Inst. of Tech.)
H. Suzuki (Univ. of Miyazaki)
M. Taguchi (Panasonic Corp.)
T. Taima (Kanazawa Univ.)
S. Yamada (Tohoku Univ.)
Area 7
Chair
H. Okada(Univ. of Toyama)
Vice-Chair
M. Nakamura(NAIST)
R. Tero(Toyohashi Univ. of Technology)
H.M. Chen(NYCU)
Members
M. Ando (Hitachi, Ltd.)
N. Clement (LIMMS-CNRS / Univ. of Tokyo)
H. Endoh (NEC Corp.)
A. Fuijii (Osaka Univ.)
K. Hashimotodani (Panasonic Corp.)
A. Hirano (Tohoku Univ.)
H. Iino (Tokyo Tech)
S. Kumagai (Meijo Univ.)
C.H. Liu (National Tsing-Hua Univ.)
T. Matsushima (Kyushu Univ.)
S. Nakajima (Japan Aviation Electronics Ind., Ltd.)
C. Nijihuis (National Univ. of Singapore)
T. Sakata (Univ. of Tokyo)
T. Shimada (Hokkaido Univ.)
K. Takei (Osaka Prefecture Univ.)
T. Tanaka (Tohoku Univ.)
T. Tokuda (Tokyo Tech)
Area 8
Chair
S. Hara(Hokkaido Univ.)
Vice-Chair
S. Nakaharai(NIMS)
Y.F. Lin(National Chung Hsing Univ.)
Members
T. Arie (Osaka Prefecture Univ. )
T. Irisawa (AIST)
F. Ishikawa (Ehime Univ.)
M. Jo (Inst. of Physical and Chemical Research)
R. Kaji (Hokkaido Univ.)
T. Kato (Tohoku Univ.)
T. Kawanago (Tokyo Tech)
K. Nagashio (Univ. of Tokyo)
T. Sasaki (National Inst. for Quantum and Radiological Sci. and Tech.)
T. Takenobu (Nagoya Univ.)
S. Wang (NTT Basic Research Labs)
T. Yanagida (Univ. of Tokyo)
Area 9
Chair
K. Terabe(NIMS)
Vice-Chair
H. Yuasa(Kyushu Univ.)
P.W. Li(NYCU)
Members
K. Aoshima (NHK STRL)
M. Ishida (NEC Corp.)
Y. Kaneko (Panasonic Corp.)
K.J. Kim (KAIST)
T. Kodera (Tokyo Tech)
Y. Matsuzaki (AIST)
T. Miyazawa (Fujitsu Labs. Ltd.)
K. Morita (Chiba Univ.)
K. Nemoto (NII)
Y. Nishi (Toshiba Corp.)
S. Ohya (Univ. of Tokyo)
T. Ono (Kyoto Univ.)
K. Ota (KIOXIA Corp.)
H. Shimizu (Tokyo Univ. of Agriculture and Tech.)
H. Yang (National Univ. of Singapore)
Area 10
Chair
M. Furuta(Kochi Univ. of Tech.)
Vice-Chair
W. Yeh(Shimane Univ.)
S. Kuroki(Hiroshima Univ.)
S.H.K. Park(KAIST)
Members
J.P. Bermundo (NAIST)
K. Hayashi (Kobe Steel Ltd.)
S. Higashi (Hiroshima Univ.)
K. Ide (Tokyo Tech)
H. Kakiuchi (Osaka Univ.)
T. Kawaharamura (Kochi Univ. of Tech.)
J. Koyama (Semiconductor Energy Laboratory Co., Ltd. )
C. Liu (Sun Yat-sen Univ.)
H. Nishinaka (Kyoto Inst. of Tech.)
K. Takechi (Tianma Japan)
T. Tezuka (KIOXIA Corp.)
K. Toko (Univ. of Tsukuba)
S.M. Yoon (Kyung Hee Univ.)
H.W. Zan (NYCU)
Area 11
Chair
H. Tatsuoka(Shizuoka Univ.)
Vice-Chair
T. Sadoh(Kyushu Univ.)
T. Hoshi(NTT Device Tech. Labs.)
Y.L. Chueh(National Tsing-Hua Univ.)
Members
A. Heya (Univ. of Hyogo)
A. Kikuchi (Sophia Univ.)
S. Ogawa (TORAY Research Center,Inc.)
Y. Shimura (Shizuoka Univ.)
Y. Tominaga (Hiroshima Univ.)
K. Watanabe (Shinshu Univ.)
W.W. Wu (NYCU)
J. Yamaguchi (Fujitsu Labs. Ltd.)
T. Yamaguchi (Kogakuin Univ.)
Area 12
Chair
K. Johguchi(Shinshu Univ.)
Vice-Chair
D. Kanemoto(Osaka Univ.)
T. Yoshida(Hiroshima Univ.)
H. Lin(National Chung Hsing Univ.)
Members
J.C. Guo (NYCU)
Y. Ma (Tohoku Univ.)
H. Majima (Toshima Electronic Devices & Storage Corp.)
