Analysis of OTS Switching Mechanisms and Memory Characteristics via
DFT-informed Stochastically Induced Defect Percolation Model
Hyunsang Hwang
POSTECH, Korea
Bandgap-Engineered Gate Stack Using BN-Based Dielectric for 3D V-NAND Flash
Memory
Dae Hyun Kang
KAIST, Korea
Recent Advances in Deeply Scaled MTJ Technology for High-Density MRAM
Masahiko Nakayama
Kioxia Corp., Japan
Property design of HfO2-and AlN-based ferroelectric films for
memory applications
Hiroshi Funakubo
Science Tokyo, Japan
High-density and Low-power 3D DRAM technology by Oxide-semiconductor Channel
Transistor DRAM (OCTRAM)
Fumiya Kimura
Kioxia Corp., Japan
Stacked 3D Ferroelectric Memories: Architectural Implications
Vijaykrishnan Narayanan
The Pennsylvania State Univ., USA
MRAM based probabilistic computing
Hyunsoo Yang
National Univ. of Singapore, Singapore
World first free-standing (111) heteroepitaxial diamond without twin grown on
Sapphire substrate
Seong-Woo Kim
Orbray Co., Ltd., Japan
Extrinsic regrown base for fine emitter InP HBTs with low base-collector
capacitance
Yasuyuki Miyamoto
Science Tokyo
Recent status in GaN/SiC-based hybrid power device technologies
Akira Nakajima
AIST, Japan
Tunable and Reconfigurable Metaphotonics
Jing Hua Teng
A*STAR, Singapore
CMOS-compatible bottom-up telecom nanowire lasers
Guoqiang Zhang
NTT Basic Research Laboratories, Japan
Interface engineering for high-performance energy harvesting material
Takafumi Ishibe
Osaka Univ., Japan
Epitaxy growth of 2D p-type semiconductors with continuous crystallinity on
amorphous dielectric
Vincent Tung
The Univ. of Tokyo, Japan