INVITED SPEAKERS

CORE AREAS

Area 1

Advanced Gate Stack / Si Processing Science

"Low Vt Metal-Gate/High-k CMOS from Understanding the Mechanism to Innovative Solution"
A. Chin (National Chiao Tung Univ., Taiwan)

"Performance and reliability of high-k/metal gate stacks: Interfacial layer defects"
G. Bersuker (SEMATECH, USA)

"Control of Interface Properties of High-k/Ge with GeO2 Interface Layer"
K. Kita (Univ. of Tokyo, Japan)

"Dopant and Potential Profiling with Atomic Resolution by Scanning Tunneling Microscopy"
T. Kanayama (MIRAI-ASRC and AIST, Japan)

Area 2

“Characterization and Materials Engineering for Interconnect Integration”

"High-Frequency Magnetic Shielding Technology for Electronic Devices"
M. Yamaguchi (Tohoku Univ., Japan)

"Aberration Corrected Microscopy and Spectroscopy for Pico-Meter Characterization of Device Materials"
K. Takayanagi (Tokyo Tech., Japn)

"Plasma Physics for Reducing PID in Nano-Structure Patternings"
T. Makabe (Keio Univ., Japan)

"Interconnect and Packaging Technology for CMOS Image Sensors"
J. Gambino (IBM, USA)

"Plastic Material Solutions for Advanced Thin Packages"
H. Tanaka (Sumitomo Bakelite Co., Ltd., Japan)

"Metal Resistivity in Narrow Interconnects Lines"
S. Maitrejean (CEA-LETI, France)

"FDC and APC System Approach to Stabilize Cu CMP Process in Mass Production Line"
H. Tsuchiyama (Renesas Tech. Corp., Japan)

Area 3

CMOS Devices /Device Physics

"III-V CMOS: Challenges and Opportunities"
J. A. del Alamo (Massachusetts Inst. of Tech., USA)

"Simulation of Material and Strain Engineering of Tunneling Field Effect Transistor with Subthreshold Swing Below 60mV/dec"
G. S. Samudra (National Univ. of Singapore, Singapore)

"Recent Progress in Carbon Nanotube Electronics -Materials, Devices, Circuits, and Modeling"
H. S. Philip Wong (Stanford Univ., USA)

Area 4

Advanced Memory Technology

"Overview and Future Challenge of DRAM Technologies"
G. Jeong (Samsung Electronics Co., Ltd., Korea)

"Impact of Random Telegraph Noise (RTN) on Future Memory"
H. Miki (Hitachi, Ltd., Japan)

"Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices"
H. Aochi (Toshiba Corp., Japan)

"Overview and Future Challenges of Advanced Material for FeRAM"
H. Funakubo (Tokyo Tech., Japan)

"Current Development Status and Future Challenges of Spin Transfer Torque MRAM Technology"
K. Ito (Hitachi, Ltd., Japan)

"Interpretation of Resistive Switching in NiO Thin Films"
I. K. Yoo (Samsung Electronics Co., Ltd., Korea)

Area 5

Advanced Circuits and Systems

"Current Status and Topics of MEMS Sensors"
K. Maenaka (Univ. of Hyogo, Japan)

"Millimeter-Wave CMOS Pulse Communication"
M. Fujishima (Univ. of Tokyo, Japan)

"Characteristics of Bulk FinFETs for Circuit Application"
J. H. Lee (Kyungpook National Univ., Korea)

"Statistical Analyses of Random Telegraph Noise for High Signal to Noise Ratio CMOS Image Sensors"
S. Sugawa (Tohoku Univ., Japan)

"Power Device Evolution Challenging to Silicon Material Limit"
A. Nakagawa (Toshiba Corp., Japan)

"Modeling of High Voltage MOSFETs for Device/Circuit Optimization"
M. Miura (Hiroshima Univ., Japan)

Area 6

Compound Semiconductor Circuits, Electron Devices and Device Physics

"GaN on Silicon RF Devices: Current Status and Future Directions"
I. Kizilyalli (Nitronex Corp., USA)

"GaN HEMTs: Present Status and Future Prospect"
T. Kikkawa¹ and S. Nakajima²
(¹Fujitsu Labs. Ltd. and ²Eudyna Devices Inc., Japan)

"Development of Ultrawideband InP/GaAsSb DHBTs : Is a Usable THz Device Possible?"
C. R. Bolognesi (Swiss Federal Inst. of Tech., Switzerland)

"Failure Mechanisms of GaN-Based Transistors in On-and Off- State"
E. Zanoni (Univ. of Padova, Italy)

"High Efficiency GaAs Lift-off Solar Cells"
N. Pan (MicroLink Devices Inc., USA)

Area 7

Photonic Devices and Device Physics

"Silicon Integrated Nanophotonics: A Platform for On-Chip Optical Interconnects"
W. Green (IBM, USA)

"Development of Self-assembled Quantum Dot Lasers for Telecommunications Applications"
D. Mowbray (Univ. of Sheffield, UK)

"Distributed Feedback and Mode Locked Silicon Evanescent Lasers"
A. W. Fang (Univ. of California, Santa Barbara, USA)

"Recent Progress of Quantum Dot Solar Cells"
Y. Okada (Univ. of Tsukuba, Japan)

Area 8

Advanced Material Synthesis and Crystal Growth Technology

"InAs/InP Quantum Dots, Dashes and Ordered"
N. Sritirawisarn (Eindhoven Univ. of Tech., Netherlands)

"Metalorganic Vapor Phase Epitaxy of III-Mn-V Epitaxial Layers for Spintronics"
B. Wessels (Northwestern Univ., USA)

"Semiconductor Nanowires: From Growth to Devices Applications"
D. L. Kwong, S. J. Lee, X. W. Sun, G. Q. Lo, J. D. Ye and S. T. Tam (IME, NTU and NUS, Singapore)

"Low Temperature Epitaxial Growth of Semiconductors on Metal Substrates"
H. Fujioka (Univ. of Tokyo, Japan)

Area 9

Physics and Applications of Novel Functional Materials and Devices

"Spin Blockade and Lifetime Enhanced Transport in a Silicon/Silicon-Germanium Double-quantum Dot"
M. A. Eriksson (Univ. of Wisconsin-Madison, USA)

"Spin Transport in a Single InAs Quantum Dot Attached to Ferromagnetic Electrodes"
T. Machida (Univ. of Tokyo, Japan)

"Single Artificial Atom Lasing"
J. S. Tsai (NEC Corp., Japan)

"Nanowire Impact Ionization Transistors (I-FETs)"
Y. C. Yeo (National Univ. of Singapore, Singapore)