ssdm2004 HOME



Area 10

Non-Volatile Memory Technologies
(Chair, T. Kobayashi, Hitachi)

"Non-Volatile Memory Technologies" session solicits all NV memory (Flash, MONOS, FeRAM, MRAM, Phase Change, Nanocrystal, Anti-fuse, and others) technology related papers. Topics relating to NV devices include cell device physics and characterization, processing and materials, tunnel dielectrics, ferroelectric materials, reliability, failure analysis, quality assurance and testing, modeling and simulation, integrated circuits, new concept technologies, and new applications and systems (solid state disks, memory cards, programmable logic, etc.).

Invited speakers:
"Recent Development and Applications of FeRAM"
T. Kijima (Seiko Epson, Japan)
"Recent Development in Phase Change Memory"
R. Bez (ST Microelectronics, Italy)
"Future Trends in NAND-Type Flash Memory"
R. Shirota (Toshiba, Japan)

Area 11

SiGe/III-V/III-N Devices and Circuits for Wireless and Optical Communications
(Chair N. Suematsu, Mitsubishi Electric)

Compound-semiconductor devices are playing important roles in wireless and optical communications systems. Future communications systems definitely require devices and circuits that dissipate lower energy, operate at higher bit rates or frequencies, have lower noise, generate higher signal power, and are more compact. This session covers advanced device and IC technologies that meet these challenges through the use of SiGe, GaAs-based, InPbased, and GaN-based materials (but not limited). Monolithic ICs or multi-chip modules integrating optical and electrical devices will also be discussed. Papers demonstrating breakthroughs and novel concepts, discussing on potentials and limitations, and addressing issues in these technologies are strongly solicited for this session.

Invited speakers:
"Challenges to Achieve THz SiGe HBTs"
G. Freeman (IBM, USA)
"Recent Developments in Photonic and mm-Wave"
S. Iezekiel (Univ. of Leeds, UK)
"An Over 100W GaN-HEMT High Power Transmitter Amplifier for Wireless Base Station with High Reliability"
T. Kikkawa (Fujitsu Labs., Japan)

Area 12

System-Level Integration and Packaging Technologies
(Chair, K. Takahashi, ASET)

The scope of this subcommittee involves all features of advanced packaging technologies and system-level integration technologies based on packaging technology. Papers are solicited in, but not limited to, the following areas: (1) Advanced packaging technologies including chip size package (CSP), wafer-level package, stacked package, (2) Three-dimensional (3D) integration technology including wafer stacking and chip stacking, (3) Advanced interconnection technologies such as optical, wireless, capacitive and inductive interconnections, (4) System integration technologies including SiP (system-inpackage), SoP (system-on-package), opto-electronics and MEMS integration, (5) Modeling and simulation of thermal, mechanical and electrical performance of advanced packaging and system integration, (6) Design and CAD technologies for the advanced packaging and system integration including interface design, EMI and EMC management and ultra-high speed data transfer technologies, (7)Testing technologies for the system integration including burn-in, known good die (KDG) and design for test (DFT).

Invited speakers:
"Wafer Level Package Integrated Functions"
G. Carchon (IMEC, Belgium)
"System Integration Technology of LSI"
H. Kawamoto (FAIS, Japan)
"To be announced"
L. Schaper (Univ. of Arkansas, USA)

Area 13

Organic Semiconductor Devices and Materials
(Chair, M. Iwamoto, Tokyo Tech)

Electronic and Optical processes in organic materials and device application in the following fields (but not limited): (1) Organic transistors, diodes and circuits, (2) Organic light emitting devices, (3) Organic photodetectors and photovoltaic devices, (4) Chemical sensors and gas sensors, (5) Fabrication and characterization of organic thin films, (6) Electrical and Optical properties of organic thin film and materials, (7) Organic-inorganic hybrid systems, (8) Molecular electronics, (9) Interfacial phenomena, LC devices, etc.

Invited speakers:
"Research and Development of Organic Electroluminescent Devices and Application for Plastic Information Devices"
Y. Ohmori (Osaka Univ., Japan)
"Development of Conducting Polymers toward Molecular Elecronics"
Y. W. Park (Seoul National Univ., Korea)

Area 14

Micro/Nano Electromechanical Devices for Bio- and Chemical Applications
(Chair, Y. Miyahara, National Inst. for Materials Science)

Micro/nano electromechanical devices (M/NEMS) are now widely applied to biochemical, medical and environmental fields and a new research field called microTAS or Lab. on a Chip is expanding and being established. Fusion of microelectronic devices with materials and methods in the chemical, biological, and medical fields is expected to open up new scientific and business fields. Papers are solicited in the following areas (but not limited): (1) Micro/nano electronic mechanical systems (M/NEMS) for RF, optical, power and others, (2) microTAS and Lab on a chip, (3) Various Bio-chips for DNA, healthcare and proteins, (4) Fabrication technologies and (5) New integrated micro/nano systems for biochemical and medical applications.

Invited speakers:
"Integrated Sensors and Systems"
D.R.S. Cumming (Univ. of Glasgow, UK)
"Micro-Nano Electromechanical Devices for Bio- and Chemical Applications"
T. Mitsui (Harvard Univ., USA)