COMMITTEES

Program Committee

Subcommittee Members:

[1] Advanced Gate Stack / Si Processing Science

Chair:	Y. Nara (Selete)
Members:	T. Aoyama (Fujitsu Labs.) H. Hwang (Gwangju Inst. of Sci. & Tech.) S. Miyazaki (Hiroshima Univ.) B. Mizuno (UJT Lab.) A. Sakai (Nagoya Univ.) H. Satake (ASET) K. Shiraishi (Univ. of Tsukuba) Y. Tsunashima (Toshiba) R. M. Wallace (Univ. of Texas at Dallas) J. Yugami (Renesas)

[2] Characterization and Materials Engineering for Interconnect Integration

Chair:	S. Ogawa (Matsushita Electric)
Members:	S. Brongersma (IMEC) K. H. Char (Seoul National Univ.) S. C. Chen (TSMC) N. Hata (AIST) M. Kodera (Toshiba) J. Koike (Tohoku Univ.) M. Matsuura (Renesas) F. Mizuno (Meisei Univ.) M. Nihei (Fujitsu Labs.) Y. J. Park (TI) T. Tatsumi (Sony) K. Ueno (NEC) T. Yoda (Toshiba)

[3] CMOS Devices / Device Physics

Chair:	K. Shibahara (Hiroshima Univ.)
Members:	F. Boeuf (STMicroelectronics) D. Hisamoto (Hitachi) Y. Kamakura (Osaka Univ.) K. Kurimoto (Matsushita Electric) H. C. Lin (National Chiao Tung Univ.) Y. Momiyama (Fujitsu) H. Oda (Renesas) K. Ohuchi (Toshiba) K. Takeuchi (NEC) J. C. S. Woo (UCLA)

[4] Advanced Memory Technology

Chair:	A. Nitayama (Toshiba)
Members:	I. Asano (Elpida) T. Eshita (Fujitsu) C. Hsu (eMemory Tech.) N. Ishiwata (NEC) H. S. Jeong (Samsung Electronics) T. Kobayashi (Hitachi) Y. Ohji (Renesas) Y. Yamauchi (Sharp)

[5] Advanced Circuits and Systems

Chair:	H. Kobayashi (Gunma Univ.)
Members:	R. Fujimoto (Toshiba) T. Hamasaki (Texas Instruments Japan) M. Horiguchi (Renesas) W. H. Ki (Hong Kong Univ. of Sci. & Tech.) T. Komuro (Agilent Technologies International Japan) K. Masu (Tokyo Tech.) H. Yamauchi (Sanyo Electric)

[6] Compound Semiconductor Circuits, Electron Devices and Device Physics

Chair:	M. Kuzuhara (Univ. of Fukui)
Members:	Y.-J. Chan (National Central Univ.) T. Hashizume (Hokkaido Univ.) R. Hattori (Mitsubishi Electric) S. Kuroda (Eudina Devices) K. Maezawa (Nagoya Univ.) A. Nakagawa (New Japan Radio) Y. Ohno (Univ. of Tokushima) S. Tanaka (NEC) T. Tanaka (Matsushita Electric) S. Yamahata (NTT)

[7] Photonic Devices and Device Physics

Chair:	M. Sugawara (Fujitsu Labs.)
Members:	M. Ezaki (Toshiba) K. Komori (AIST) Y. Lee (Hitachi) L. Lester (Univ. of New Mexico) S. Nishikawa (Mitsubishi Electric) S. Noda (Kyoto Univ.) M. Tokushima (NEC) O. Wada (Kobe Univ.)

[8] Advanced Material Synthesis and Crystal Growth Technology

Chair:	H. Yamaguchi (NTT)
Members:	H. Asahi (Osaka Univ.) T. Fukui (Hokkaido Univ.) T. Iwai (Fujitsu Labs.) N. Kobayashi (Univ. of Electro-Communications) K. Nishi (NEC) R. Nötzel (Eindhoven Univ. of Tech.) S. Shimomura (Osaka Univ.) E. S. Tok (National Univ. of Singapore) K. Yamaguchi (Univ. of Electro-Communications)

[9] Physics and Applications of Novel Functional Materials and Devices

Chair:	Y. Takahashi (Hokkaido Univ.)
Members:	T. Fujisawa (NTT) K. Ishibashi (RIKEN) H. Mizuta (Tokyo Tech.) J. Motohisa (Hokkaido Univ.) Y. Nakamura (NEC) Y. Ohno (Tohoku Univ.) B. G. Park (Seoul National Univ.) Y. Suda (Tokyo Univ. of Agri. & Tech.) M. Tabe (Shizuoka Univ.) T. Usuki (Univ. of Tokyo)

[10] Organic Materials Science, Device Physics, and Applications

Chair:	K. Kudo (Chiba Univ.)
Members:	M. Iwamoto (Tokyo Tech.) K. Kato (Niigata Univ.) Y. -S. Kwon (Dong-A Univ.) T. Minakata (Asahi-KASEI) Y. Ohmori (Osaka Univ.) T. Sano (Sanyo Electric) T. Someya (Univ. of Tokyo) H. Usui (Tokyo Univ. of Agri. & Tech.)

[11] Micro / Nano Electromechanical and Bio-Systems (Devices)

Chair:	H. Tabata (Osaka Univ.)
Members:	S. A. Contera (Univ. of Oxford) T. Nishimoto (Shimadzu) H. Oana (Univ. of Tokyo) T. Ono (Tohoku Univ.) K. Sawada (Toyohashi Univ. of Tech.) H. Sugihara (Matsushita Electric) Y. Takamura (JAIST) Y. Yoshino (Murata Mfg.)

Persons in charge of online paper submission and registration:

M. Fujishima (Univ. of Tokyo) T. Sakamoto (NEC)