INVITED SPEAKERS
Area 1
Advanced LSI Processing & Materials Science
“3D dopant analysis in nano scale devices (FinFETs) by Atom Probe Tomography”
W.Vandervorst (IMEC, Belgium)
“Low temperature Microwave Annealing process for Ge MOSFETs”
Y. -J. Lee (National Nano Device Laboratories, Taiwan)
“Strain engineering for FinFETs”
A. Nainani (Applied Materials, USA)
“Germanium-Tin Tunneling Field-Effect Transistor: Device Design and Experimental Realization”
Y. Yue (National Univ. of Singapore, Singapore)
Area 2
Advanced Interconnect / Interconnect Materials and Characterization
“3D Heterogeneous Integration for Nanosensor Systems - the EU-;Project e-BRAINS”
M. Fernández-Bolaños (Nanolab EPFL, Switzerland)
“Ge Active Photonic Devices on Si for Optical Interconnects”
Y. Ishikawa (Univ. of Tokyo, Japan)
“BEOL-Transistor Technology with InGaZnO channel for High/Low Voltage Bridging I/Os”
K. Kaneko (Renesas, Japan)
“Carbon Nano-materials as VLSI Interconnects”
J. Robertson (Cambridge Univ., UK)
Area 3
CMOS Devices / Device Physics
“Process/Design co-optimization with FDSOI Technology for Advanced CMOS Applications”
F. Arnaud (STMicroelectronics, France)
“Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs”
Y. Kamakura (Osaka Univ., Japan)
“Ultralow-Voltage Operation SOTB Technology toward Energy Efficient Electronics”
N. Sugii (LEAP, Japan)
Area 4
Advanced Memory Technology
“Strategy of STT-MRAM Cell Design and Its Power Gating Technique for Low-Voltage and Low-Power Cache Memories”
T.Ohsawa (Tohoku Univ., Japan)
“Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)”
K. Shiraishi (Univ. of Tsukuba, Japan)
“Modeling of Transition Metal Oxide Based RRAM Devices”
J.F. Kang (Peking Univ., China)
Area 5
Advanced Circuits and Systems
“Smart Infrared Detector”
M. Denoual (ENSI Caen, France)
“Ultra-high Speed Image Sensors for Scientific Imaging”
R. Kuroda (Tohoku Univ., Japan)
“Properties and Application of Crystalline In-Ga-Zn-Oxide Semiconductor”
S. Yamazaki (SEL, Japan)
“High Performance Multi-Core for Communication and Multimedia Applications”
Z. Yu (Fudan Univ., China)
Area 6
Compound Semiconductor Electron Devices and Related Technologies
“High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs”
D. -H. Kim (GLOBALFOUNDRIES, USA)
“Nanostructured GaN Transistors: Pushing the Limits of Linearity and Reliability”
E. Matioli (MIT, USA)
“Recent developments of GaN HEMTs and MMICs for high power electronics”
P. Waltereit (IAF, Germany)
Area 7
Photonic Devices and Optoelectronic Integration
“A figure of merit based transmitter link penalty calculation for plasma-dispersion electro-optic Mach-Zehnder modulators'”
D. Gill (IBM T. J. Watson Research Center, USA)
“High speed silicon modulators for integrated transceivers”
G. Reed (Univ. of Southampton, UK)
“InP based 1.55 μm quantum dot materials and lasers for ultra-narrow line width applications”
J. P. Reithmaier (Univ. of Kassel, Germany)
“A qubit-photon controlled-NOT gate using a quantum dot strongly coupled to a cavity”
E. Waks (Univ. of Maryland, USA)
Area 8
Advanced Material Synthesis and Crystal Growth Technology
“InN/InGaN Quantum Dots: A Surprise for Highly Sensitive and Fast Potentiometric Biosensors”
N. H. Alvi (Technical Univ. of Madrid, Spain)
“Quantum Dots Sensitized ZnO Nanowires-array Photoelectrodes for Water Splitting”
R. -S. Liu (National Taiwan Univ., Taiwan)
“Hybrid-Formation of Single-Crystalline Ge(Si,Sn)-on-Insulator Structures by Self-Organized Melting-Growth”
M. Miyao (Kyushu Univ., Japan)
“Atomically controlled diamond: homoepitaxy, doping, and surface structures”
N. Tokuda (Kanazawa Univ., Japan)
Area 9
Physics and Applications of Novel Functional Devices and Materials
“Metal Oxide RRAM For Next Generation Mass Storage: 3D Vertical Architecture and Electrode/Oxide Interface Engineering”
H. -Y. Chen (Stanford Univ., USA)
“Semiconductor Isotope Engineering of Silicon and Diamond for Quantum Computation and Sensing”
K. M. Itoh (Keio Univ., Japan)
“Resistively Detected NMR Study of Correlated Electrons in a GaAs Quantum Well: Fractional Quantum Hall States and More”
K. Muraki (NTT Basic Research Labs., Japan)
“Phase-change non-volatile memory equipped with topological insulating properties -Fusion of PCRAM and spintronics-.”
J. Tominaga (AIST, Japan)
Area 10
Organic Materials Science, Device Physics, and Applications
“Third Generation Organic Light Emitting Diodes- Design for Molecular and Device Architectures-”
C. Adachi (Kyushu Univ., Japan)
“Materials and devices of high-performance organic transistors”
J. Takeya (Osaka Univ., Japan)
“Advances in Flexible Electronics based on Shape Memory Polymers”
W. E. Voit (Univ. of Texas at Dallas, USA)
Area 11
Devices and Materials for Biology and Medicine
“Totally Integrated Linear and Non-Linear Optics Multimodal Microscopy Platform to Understand Single Cell Processes.”
C. Lenz César (Univ. Estadual de Campinas, Brazil)
“Fighting Cancer through Physical Sciences and Engineering Approaches”
L. A. Nagahara (NIH, USA)
“Smart Microfluidic and Analytical Devices Based on Electrochemical Principles”
H. Suzuki (Univ. of Tsukuba, Japan)
Area 12
Spintronics Materials and Devices
“Electric field control of ferromagnetism in transition metals”
D. Chiba (Kyoto Univ., Japan)
“A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon”
O. M. J. van ‘t Erve (Naval Research Laboratory, USA)
“Spin orbit induced electronic spin polarization and its future application”
M. Kohda (Tohoku Univ., Japan)
“Generation and Directional Control of Spin Wave by Spatially-Shaped Light Pulses”
T. Satoh (Univ. of Tokyo, Japan)
Area 13
Applications of Nanotubes, Nanowires, and Graphene
“Formation and electronic properties of X- and T- shaped InSb nanowires and nanowire networks”
D. Car (Eindhoven Univ. of Technology, The Netherlands)
“Wrapping Carbon Nanotubes in a Gate-All-Around Geometry”
A. D. Franklin (IBM Research, USA)
“InGaN-based nanocolumn light emitters in visible wavelength range”
S. Ishizawa (Sophia Univ., Japan)
“Transistors on Nano-sheets Beyond Graphene”
J. Ye (Univ. of Tokyo, Japan)
Area 14
Power Devices and Materials
“Progress in SiC and GaN High Voltage Power Devices”
T. P. Chow (Rensselaer Polytechnic Institute, USA)
“Research and Development of Ga2O3 Power Devices”
M. Higashiwaki (NICT, Japan)
“Advanced GaN Power Devices for Automotive Applications”
T. Kachi (Toyota Central R&D Labs., Inc., Japan)
“Growth of bulk GaN Crystal by Na Flux Method”
Y. Mori (Osaka Univ., Japan)
“Performance Characteristics and Applications for Second Generation SiC Power MOSFETs”
J. W. Palmour (Cree, Inc., USA)
Area 15
Photovoltaic Materials and Devices
“Overview of CZTS-Based Thin Film Solar Cells”
H. Katagiri (Nagaoka National Col. of Technology, Japan)
“Hybrid Perovskite Solar Cells”
H. J. Snaith (Univ. of Oxford, UK)
“Panasonic's R&D on Photovoltaic Technologies”
A. Terakawa (Panasonic Corp., Japan)
Invited speakers and titles may change
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