| Y. Aoyagi (Ritsumeikan Univ.)
T. Asano (Kyushu Univ.)
H. Hasegawa (Hokkaido Univ.)
K. Hashimoto (Sony Corp.)
S. Hiraki (Toshiba Corp.)
Y. Horiike (NIMS)
S. Hosaka (Tokyo Electron Ltd.)
A. Ibaraki (SANYO Electric Co., Ltd.)
Y. Inoue (Renesas Tech. Corp.)
H. Ishiwara (Tokyo Tech.)
T. Kamiya (NICT)
T. Kanayama (AIST)
T. Kihara (Hitachi ULSI Systems Co., Ltd.)
T. Masuhara (ASET)
K. Natori (Univ. of Tsukuba)
M. Ogura (Matsushita Electric
Industrial Co., Ltd.)
T. Ohmi (Tohoku Univ.)
|
T. Oomori (Mitsubishi Electric Corp.)
N. Saito (NHK)
H. Sakaki (Toyota Technological Inst.)
Y. Shiraki (Musashi Inst. of Tech.)
J. Sone (NEC Corp.)
T. Suga (Univ. of Tokyo)
K. Tada (Kanazawa Inst. of Tech.)
A. Takahashi (Sharp Corp.)
H. Takasu (ROHM Co., Ltd.)
E. Takeda (Hitachi, Ltd.)
K. Taniguchi (Osaka Univ.)
K. Tsubouchi (Tohoku Univ.)
H. Uchida (Oki Electric Industry Co., Ltd.)
J. Ueda (SILIJ)
H. Watanabe (Selete)
Y. Yasuda (Kochi Univ. of Tech.)
N. Yokoyama (Fujitsu Labs. Ltd.)
J. Yumoto (NTT Corp.)
|
