SSDM 2009  



Area 1

Advanced Gate Stack / Si Processing & Material Science

"Development of high-k / Metal Gate CMOS Technology in Selete"
K. Ikeda (Selete, Japan)

"Microscopic Characterization of Devices by Scanning Transmission Electron Microscopy: From Single Atom Imaging to Macroscopic Properties"
S. J. Pennycook (Oak Ridge National Lab., USA)

"Process Condition Dependence of Random VT Variability in NFETs and PFETs"
T. Tsunomura (Selete, Japan)

"Characteristics and Integration Challenges of FinFET-based Devices for sub-32nm Technology Nodes Circuit Applications"
A. Veloso (IMEC, Belgium)

Area 2

Characterization and Materials Engineering for Interconnect Integration

"Through-Si-Via Technology Solutions for 3D System Integration"
E. Beyne (IMEC, Belgium)

"Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status and Prospects"
K. Banerjee (Univ. of California-Santa Barbara, USA)

"Patterning and Metallization Options for 22nm Node Contact Module Integration"
S. Demuynck (IMEC, Belgium)

"Wireless Interconnection by Electromagnetic Coupling of Open-Ring Resonators and its Application to System Integration"
Y. Ohno (Univ. of Tokushima, Japan)

"High-resolution and Thermodynamic Analysis of Interconnect Metals and Diffusion Barriers"
R. Sinclair (Stanford Univ., USA)

"The Helium Ion Microscope for Device Imaging, Failure Analysis and Circuit Modification Applications"
W. Thompson (Carl Zeiss SMT, USA)

Area 3

CMOS Devices /Device Physics

"Trends in CMOS Substrates:A Reliability Perspective"
M. A. Alam (Purdue Univ., USA)

"Ultrathin Body and BOX SOI for Low Power Application at the 22nm Node and Below"
F. Andrieu (CEA-LETI, France)

"The Tunnel Source MOSFET: A Novel Asymmetric Device for Low Power Applications"
J. Woo (UCLA, USA)

Area 4

Advanced Memory Technology

"Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)"
R. Degraeve (IMEC, Belgium)

"Overview and Future Challenges of Capacitor-less DRAM Technologies For High Density Memory Applications"
P. C. Fazan (Innovative Silicon Switzerland)

"Overview and Future Challenge of High Density FeRAM"
I. Kunishima (Toshiba Corp., Japan)

"Current Status and Future Challenge of PRAM"
Y. H. Shih (Macronix Int'l Co., Ltd., Taiwan)

"Switching Mechanism of TaOx ReRAM"
Z. Wei (Panasonic Corp., Japan)

"Advancements and Future Challenge of Spin Torque MRAM"
H. Yoda (Toshiba Corp., Japan)

Area 5

Advanced Circuits and Systems

"CMOS Circuit Design Techniques for Millimeter-Wave Applications"
R. Fujimoto (Toshiba Corp., Japan)

"Recent topics in Power Management circuits"
H. Kobayashi (Gunma Univ., Japan)

"Wireless CMOS TSV"
T. Kuroda (Keio Univ., Japan)

"Recent Progress in High-Resolution and High-Speed CMOS Image Sensor Technology"
I. Takayanagi (Aptina Japan, LLC., Japan)

Area 6

Compound Semiconductor Circuits, Electron Devices and Device Physics

"Materials and Strain Issues in AlGaN/GaN HEMT Degradation"
E. Munoz (Univ. Politecnica
de Madrid, Spain)

"Current Trends in SiC Power Devices"
J. W. Palmour (Cree, Inc., USA)

"Performance Projection of III-V and Ge Channel MOSFETs"
H. Tsuchiya (Kobe Univ., Japan)

"Advances of GaN Power Transistors"
Y. Wu (Transphormu Inc., USA)

"High-Performance Inversion-Mode III-V MOSFETs Enabled by Atomic-Layer-Deposited Migh-k Dielectrics"
P. D. Ye (Purdue Univ., USA)

Area 7

Photonic Devices and Device Physics

"Quantum Dot Lasers. Commercial Challenges and Opportunities"
A. Kovsh (Innolume, Inc., Germany)

"Ge Active Devices for Si Photonics (tentative)"
J. Michel (MIT, USA)

"Optical Gain in Ultra-Thin Silicon Resonant Cavity Light-Emitting Diode"
S. Saito (Hitachi, Ltd., Japan)

Area 8

Advanced Material Synthesis and Crystal Growth Technology

"High Throughput Combinatorial Materials Exploration for Advanced Magneto-Electronics"
T. Fukumura (Tohoku Univ., Japan)

"Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide"
K. Horn (Fritz-Haber-Institut der Max-Planck-Gesellschaft, Germany)

"III-V Nanowires Grown by MOCVD for Optoelectronic Applications"
H. H. Tan (Australian National Univ., Austgralia)

"Recent Advances in InN-based III-nitrides Towards Novel Nanostructure Photonic Devices"
A. Yoshikawa (Chiba Univ., Japan)

Area 9

Physics and Applications of Novel Functional Materials and Devices

"Spin Read-Out of Donors in Silicon"
M. Brandt (Walter Schottky Inst., Germany)

"Electromechanical Systems for Memory and Logic Devices"
I. Mahboob (NTT Corp., Japan)

"From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs"
S. Rogge (Delft Univ. of Tech., Netherlands)

"AFM Nanolithography of Graphene"
L. Rokhinson (Purdue Univ., USA)

Area 10

Organic Materials Science, Device Physics, and Applications

"Roll-to-Roll Printed 13.56 MHz Operated RFID Tags on Plastic Foils"
G. Cho (Sunchon National Univ., Korea)

"Efficient organic p-i-n solar cells having very thick codeposited i-layer consisting of highly purified organic semiconductors"
M. Hiramoto (IMS, Japan)

"Environmental and Electrical Stability of Organic Transistors"
D. Knipp (Jacobs Univ. Bremen, Germany)

"Organic TFT-driven Flexible Displays"
K. Nomoto (Sony Corp., Japan)

"Surface Selective Deposition of Molecular Semiconductors for Solution-based Integration of Organic Field-Effect Transistors"
K. Tsukagoshi (MANA-NIMS, Japan)