SSDM 2009  



Area 1

Advanced Gate Stack / Si Processing & Material Science
(Chair: J. Yugami, Semiconductor Leading Edge Technologies, Inc.)

This subcommittee covers all the innovative front-end-of-line process technologies and sciences for advanced silicon-based LSI devices. Not only the gate stack technology but all the new concepts on Si-based front-end process technologies are welcome. Papers are solicited in the following areas (but are not limited to these areas): (1) advanced gate stack technologies, such as a SiON gate insulator, high-k gate insulator, metal gate, and high-mobility channel materials, including device integration technology; (2) front-end-of-line process technologies that break through the scaling limit, such as a low-temperature process, shallow and conformal junction formation, novel diffusion/oxidation, high-precision dry/wet etching and highly controlled surface preparation technique for nm scale fabrication; (3) reliability physics and analysis; and (4) Material characterization and modeling for a Si process..

Area 2

Characterization and Materials Engineering for Interconnect Integration
(Chair: M. Matsuura, Renesas Tech. Corp.)

Technologies and sciences that cover a Si back-end-of-line (BEOL) process are discussed, including 3-D interconnects and packaging technologies. These areas require new innovations and different ideas from conventional interconnect in characterization, material, and process/structure technologies. Papers are solicited in the following areas: (1) characterization methodology for materials, mechanical and electrical properties in small geometry, metrology and yield improvement; (2) materials, process and packaging technologies for advanced Cu/Low-k interconnect; (3) reliability phenomena and physics, such as EM, SIV, TDDB, and modeling/prediction; (4) passive components for RF or High-speed operations; (5) new structures and materials on future interconnects, such as a 3-D interconnect with TSV, a CNT interconnect, an on-chip optical interconnect, and BEOL-based memory applications, i.e. MRAM and PRAM.

Area 3

CMOS Devices /Device Physics
(Chair: H. Wakabayashi, Sony Corp.)

The aim of this area is to discuss advanced silicon device technologies and physics. Papers are solicited in the following areas: (1) sub-100-nm silicon CMOS devices and their integration technologies; (2) performance enhancement technologies, such as a strained-silicon channel or any high-mobility channels; (3) post-bulk-planar silicon device structures, including planar SOI, FinFET, multi-channels, or nano-wires; (4) device physics of advanced CMOS, including simulation and modeling on carrier transport and reliability; and (5) manufacturing and yield science in conjunction with the increasing variability of device parameters, fluctuations of fabrication parameters or the intrinsic atomistic nature.

Area 4

Advanced Memory Technology
(Chair: A. Nitayama, Toshiba Corp.)

Advanced memory technologies are very much expected to explosively evolve SoC devices and digital information technologies toward ‘‘high speed and high density, broadband and mobile.’’ Papers are solicited in the area of all advanced volatile or nonvolatile memory devices, such as DRAM, flash (including SONOS and nanocrystal devices), FeRAM, MRAM, phase change RAM, resistance RAM, one time programming memory, 3-D memory, and others. Topics include cell device physics and characterization, process integration and materials, tunneling dielectrics, ferroelectric and ferromagnetic materials, reliability, failure analysis, quality assurance and testing, modeling and simulation, process control and yield enhancement, integrated circuits, new concept memories, and new applications and systems (solid state disks, memory cards, programmable logic, etc.).

Area 5

Advanced Circuits and Systems
(Chair: S. Kawahito, Shizuoka Univ.)

Original papers bridging the gap between materials, devices, circuits, and systems in Si-ULSI, including SiGe, are solicited in subject areas that include, but not limited to the following: (1) advanced digital, analog, and mixed-signal circuits as well as memory; (2) high-speed and high-frequency circuits; (3) wireless, wireline, and optical communication circuits; (4) power devices and circuits as well as power management technology; (5) interconnection design for communication inside a chip as well as among chips; (6) technologies for systems on a chip (SoC) and system in a package (SiP); (7) LSI testing technology; (8) three-dimensional IC technology; (9) MEMS (passive) devices as well as circuits, RF MEMS; (10) sensor devices and circuits; (11) thin film transistors and circuits; and (12) organic transistors and circuits.

Area 6

Compound Semiconductor Circuits, Electron Devices and Device Physics
(Chair: T. Hashizume, Hokkaido Univ.)

This session covers all aspects of advanced electron device and IC technologies based on compound semiconductors, including III-V, III-N, SiC, oxide semiconductors and other materials. Papers are solicited in the following areas: (1) FETs, HFETs, HBTs, and other novel device structures; (2) high-voltage or high-temperature electron devices; (3) microwave and millimeter-wave amplifiers, oscillators, switches, and other ICs; (4) III-V high-mobility transistors and high-speed digital ICs; (5) advanced sensor devices; (6) theory and physics of electron devices; (7) processing and characterization techniques for devices and ICs; (8) stability and reliability issues; and (9) novel applications utilizing compound semiconductor devices and circuits. Contributions related to other interesting topics are also welcome.

Area 7

Photonic Devices and Device Physics
(Chair: H. Yamada, Tohoku Univ.)

This subcommittee covers all aspects of emerging technologies in active, passive, and integrated?optoelectronic and photonic devices as well as device?physics, which include: (1) laser diodes, LEDs, optical amplifiers, and photodetectors; (2) quantum?nanostructure optical devices including quantum wells,?quantum wires, or quantum dots; (3) photonic nanostructures including photonic crystals; (4) functional optical devices including optical switches, modulators, or optical MEMS; (5) nonlinear optical devices including wavelength converters or all-optical?switches; (6) waveguide devices and photonic integrated circuits with silica, silicon, or polymer materials; (7) photonic devices and integration with silicon photonics; (8) material and device processing and characterization techniques; (9) packaging and moduling for photonic devices; (10) optical communication, interconnection and signal processing applications of optoelectronic and photonic devices; (11) linear and nonlinear optical properties, electronic band structures, and the relaxation mechanism of quantum nanostructures; and (12) novel phenomena and applications including slow light, fast light, optical memory, and optoelectronic tweezers, etc.

Area 8

Advanced Material Synthesis and Crystal Growth Technology
(Chair: A. Yamada, Tokyo Tech.)

The scope of this subcommittee covers all kinds of synthesis, growth, and fabrication techniques of not only semiconducting but also novel functional materials and structures, nitride compounds, CNT, nanowires and nanoparticles, etc. The principle idea is to enhance mutual communication among people in different committees to share knowledge of commonly important key technologies in fabrication processes. Specific scopes are, but not limited to, the following: (1) novel material systems and structures; (2) nitride-related compound semiconductors; (3) novel synthesis, growth, and fabrication
techniques; (4) carbon nanotubes; (5) nanowires and nanoparticles; (6) microscale and nanoscale 3-D structures; (7) characterization of fundamental properties.

Area 9

Physics and Applications of Novel Functional Materials and Devices
(Chair: T. Fujisawa, Tokyo Tech.)

This session covers physics, applications and fabrication techniques of novel functional devices and materials. We strongly encourage novel, pioneering, and fundamental research works that would be influential in various solid state devices of materials (semiconductors, metals, superconductors, magnetic and organic materials, etc.). Specific topics are (1) quantum phenomena in nanostructures; (2) transport and optical characteristics of low-dimensional structures; (3) devices dealing with single electron, hole, excition, photon, and other quanta; (4) solid-state quantum computing and communications; (5) nanometer-scale characterization with spanning probe techniques; (6) nanofabrication techniques and self-organized phenomena; and (7) other novel functional devices, but are not limited to these subjects.

Area 10

Organic Materials Science, Device Physics, and Applications
(Chair: K. Kato, Niigata Univ.)

This field covers organic materials, device physics, characterization, and applications to organic devices. Papers are solicited in the following areas (but are not limited to these areas): (1) organic transistors and circuits; (2) organic light emitting devices; (3) organic diodes, photodetectors, and photovoltaic devices; (4) chemical sensors and gas sensors; (5) molecular electronics; (6) fabrication and characterization of organic thin films; (7) electrical and optical properties of organic thin film and materials; (8) organic-inorganic hybrid systems; and (9) interfacial phenomena, LC devices, etc.