SSDM 2010



Area 11

Micro/Nano Electromechanical and Bio-Systems (Devices)

“Detection of biomolecular recognition using bio-transistors "
Y. Miyahara (NIMS, Japan)

“Novel Quantum Effect Devices realized by Fusion of Bio-template and Defect-Free Neutral Beam Etching"
S. Samukawa (Tohoku Univ., Japan)

“Advanced Silicon Integration Technologies for Lab-on-chip and Implantable Device Applications"
C. Van Hoof (IMEC, Belgium)

“Applications of Nanotechnology in Biomedical Micro/Nano Devices"
Gou-Jen Wang (National Chung Hsing Univ., Taiwan)

Area 12

Spintronic Materials and Devices

“Spin dice-random number generator using current induced magnetization switching in MgO-MTJ"
A. Fukushima (AIST, Japan)

“Three-Terminal Spin-Torque-Based Magnetic Memory Element"
Michael C. Gaidis (IBM, USA)

“Electrical Detection of Spin Transport in Si using high-quality Schottky Contacts"
K. Hamaya (Kyushu Univ., Japan)

“Magnetic properties of GaMnAs and its application for multi-valued memory device"
S. Lee (Korea Univ., South Korea)

“Spin transfer torque effects in nanopillar devices with perpendicular anisotropy"
S. Mangin (Nancy Université, France)

“Large tunnel magnetoresistance in double barrier magnetic tunnel junctions with thin CoFeB middle layer"
H. Naganuma (Tohoku Univ., Japan)

Area 13

Application of Nanotubes, Nanowires, and Graphene

“Synthesis and dry depositon of SWCNT networks for flexible,
transparent conductors and field effect transistors"
E. I. Kauppinen (Aalto Univ., FINLAND)

“DOS Bottleneck for Contact Resistance in Graphene FETs"
K. Nagashio (Univ. of Tokyo, Japan)

“Circuit Implementation of InAs Nanowire FET"
W. Prost (Univ. of Duisburg- Essen, Germany)

“Graphene nanophotonics and nanoelectronics"
F. Xia (IBM, USA)

Area 14

Photovoltaics & Power Semiconductor Devices

“High Performance Silicon Carbide Power Modules for Extreme
Environment Applications"
A. B. Lostetter (Arkansas Power Electronics International, Inc., USA)

“Next Generation PV-Inverters with SiC Semiconductors"
B. Burger (Fraunhofer Inst. of Solar Energy, Germany)

“Impact of impurities on the solar cell performance"
G. Coletti (ECN Solar Energy, Netherlands)

“Recent Progress in High Voltage MOS-gated Power Transistors in GaN"
T. Paul Chow (Rensselaer, USA)

“Crystalline Silicon Solar Cells, Thinner the Better"
Y. Hayashi (AIST, Japan)

“Flexible Cu(In,Ga)Se2 Thin Film Solar Cells and Challenges for Low
Temperature Growth"
C. A. Kaufmann (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany)

“Reliability estimation of power modules using advanced
electro-thermal modeling techniques"
P. Mawby (Univ. of Warwick, UK)

“Progress in SiC Power Semiconductor Devices"
T. Shinohe (Toshiba Corp., Japan)