SSDM 2009  



Area 1

Advanced Si Processing & Materials Science
(Chair: J. Yugami, Selete)

This area covers all the innovative front-end-of-line process technologies and sciences for advanced silicon-based LSI devices. Not only the gate stack technology but all the new concepts on Si-based front-end process technologies are welcome. Papers are solicited in the following areas (but are not limited to these areas): (1) advanced gate stack technologies, such as a SiON gate insulator, high-k gate insulator, metal gate, and high-mobility channel materials, including device integration technology; (2) front-end-of-line process technologies that break through the scaling limit, such as a low-temperature process, shallow and conformal junction formation, novel diffusion/oxidation, high-precision dry/wet etching and highly controlled surface preparation technique for nm scale fabrication; (3) reliability physics and analysis; and (4) Material characterization and modeling for a Si process.

Area 2

Advanced Interconnect /3-D Integration Science
(Chair: M. Kodera, Toshiba Corp.)

Technologies and sciences that cover a Si back-end-of-line (BEOL) process are discussed, including 3-D interconnects and packaging technologies. These areas require new innovations and different ideas from conventional interconnect in characterization, material, and process/structure technologies. Papers are solicited in the following areas: (1) new structures and materials on future interconnects, such as a 3-D interconnect with TSV, a CNT interconnect, an on-chip optical interconnect, and BEOL-based memory applications, i.e. MRAM and PRAM; (2) characterization methodology for materials, mechanical and electrical properties in small geometry, metrology and yield improvement; (3) materials, process and packaging technologies for advanced Cu/Low-k interconnect; (4) reliability phenomena and physics, such as EM, SIV, TDDB, and modeling/prediction; (5) passive components for RF or High-speed operations.

Area 3

CMOS Devices / Device Physics
(Chair: H. Wakabayashi, Sony Corp.)

The aim of this area is to discuss advanced silicon device technologies and physics.
Papers are solicited in the following areas: (1) advanced silicon CMOS devices and their integration technologies; (2) performance-booster technologies such as high-mobility channels including strained-Si, SiGe, Ge and III-V's; (3) device architectures such as a planar SOI, FinFET, multi-channels, nano-wires and their parasitic characteristics; (4) device physics of not only advanced CMOS but also emerging transistors, such as a tunneling FET and sub-Vth transistor, including modeling and simulation on carrier transport and reliability; (5) reliability-assessment technologies including HC, NBTI and RTN; and (6) manufacturing and yield sciences in conjunction with the increasing variability of device parameters, due to random and systematic variations.

Area 4

Advanced Memory Technology
(Chair: A. Nitayama, Toshiba Corp.)

Advanced memory technologies are very much expected to explosively evolve SoC devices and digital information technologies toward ‘‘high speed, low power, high density, broadband and mobile.’’ Papers are solicited in the area of all advanced volatile or nonvolatile memory devices, such as DRAM, flash (including SONOS and nanocrystal devices), FeRAM, MRAM, phase change RAM, resistance RAM, one time programming memory, 3-D memory, organic memory, probing memory and others. Topics include cell device physics and characterization, process integration and materials, tunneling dielectrics, ferroelectric and ferromagnetic materials, reliability, failure analysis, quality assurance and testing, modeling and simulation, process control and yield enhancement, integrated circuits, new concept memories, and new applications and systems (solid state disks, memory cards, programmable logic, etc.).

Area 5

Advanced Circuits and Systems
(Chair: S. Sugawa , Tohoku Univ.)

Original papers bridging the gap between materials, devices, circuits, and systems in ULSI are solicited in subject areas that include, but not limited to the following: (1) advanced digital, analog, and mixed-signal circuits as well as memory; (2) high-speed and high-frequency circuits for wireless, wireline, and optical communication; (3) technologies for systems on a chip (SoC) and system in a package (SiP),including three-dimensional IC technology and intra/inter-chip interface design; (4) device, interconnect and circuits modeling for heterogeneous integration (5) interface circuits and systems for sensor devices; (6) circuits and systems for MEMS devices as well as RF MEMS; (7) heterogeneous integration circuits and systems for nano/bio sensors and MEMS; (8) advanced interconnect technologies for body area network as well as wearable computer; (9)circuit technologies for emerging devices as well as thin film transistors, micro/nano devices, and organic devices.

Area 6

Compound Semiconductor Electron Devices and Related Technologies
(Chair: T. Hashizume, Hokkaido Univ.)

This area covers all aspects of advanced electron device and IC technologies based on compound semiconductors, including III-V, III-N, SiC, oxide semiconductors and other materials. Papers are solicited in the following areas: (1) FETs, HFETs, HBTs, and other novel device structures; (2) high-voltage or high-temperature electron devices; (3) microwave and millimeter-wave power devices and amplifiers, oscillators, switches, and other ICs; (4) III-V high-mobility transistors and high-speed digital ICs; (5) advanced sensor devices; (6) theory and physics of electron devices; (7) processing and characterization techniques for devices and ICs; (8) stability and reliability issues; and (9) novel applications utilizing compound semiconductor devices and circuits. Contributions related to other interesting topics are also welcome.

Area 7

Photonic Devices and Optoelectronic Integration
(Chair: M. Tokushima, AIST)

This area covers all aspects of photonic devices, featuring silicon photonics, quantum photonics and solid-state lighting towards creating highly integrated systems of optical telecommunication, optical interconnection and efficient illumination. The aspects include but are not limited to: (1) light sources (LDs, LEDs, etc.), optical amplifiers/attenuators and photodetectors (photovoltaic cells); (2) waveguides, waveguide devices, 2D/3D optical wiring, and photonic integrated circuits of any materials; (3) functional optical devices including modulators, switches, memories and any of MEMS devices; (4) optical quantum structures including quantum wells, quantum wires, and quantum dots; (5) photonic and plasmonic structures including photonic crystals and surface-plasmon antennae; (6) nonlinear signal-processing devices including wavelength converters, all-optical switches; (7) device structures and circuit designs for optoelectronic integration; (8) implementation and packaging of photonic devices; (9) novel phenomena and applications including slow/fast light and optoelectronic tweezers; (10) optical material growth and fabrication process as well as characterization techniques, etc.

Area 8

Advanced Material Synthesis and Crystal Growth Technology
(Chair: A. Yamada, Tokyo Tech.)

The scope of this area covers all kinds of synthesis, growth, and fabrication techniques of materials and structures including semiconductors, oxides, etc. The principle idea is to foster mutual communication of commonly important key technologies in synthesis processes among people in different fields of materials science. Specific scopes are, but not limited to, the following: (1) novel synthesis, growth, and fabrication techniques; (2) novel material systems; (3) silicon-related materials; (4) nitride-related compound semiconductors; (5) carbon nanomaterials; (6) functional oxides; (7) nanowires and nanoparticles; (8) self-assembly; (9) nanoscale 3-D structures; (10) characterization of fundamental properties.

Area 9

Physics and Application of Novel Functional Devices and Materials
(Chair: K. Ono, RIKEN)

This area covers physics, applications and fabrication techniques of novel functional devices and materials. We strongly encourage novel, pioneering, and fundamental research works that would be influential in various solid state devices of materials (semiconductors, metals, superconductors, magnetic and organic materials, etc.). Specific topics are (1) quantum phenomena in nanostructures; (2) transport and optical characteristics of low-dimensional structures; (3) devices dealing with single electron, hole, excition, photon, and other quanta; (4) solid-state quantum computing and communications; (5) nanometer-scale characterization with scanning probe techniques; (6) nanofabrication techniques and self-organized phenomena; and (7) other novel functional devices, but are not limited to these subjects.

Area 10

Organic Materials Science, Device Physics, and Applications
(Chair: K. Kato, Niigata Univ.)

This area covers organic materials, device physics, characterization, and applications to organic devices. Papers are solicited in the following areas (but are not limited to these areas): (1) organic transistors and circuits; (2) organic light emitting devices; (3) organic diodes, photodetectors, and photovoltaic devices; (4) chemical sensors and gas sensors; (5) molecular electronics; (6) fabrication and characterization of organic thin films; (7) electrical and optical properties of organic thin film and materials; (8) organic-inorganic hybrid systems; and (9) interfacial phenomena, LC devices, etc.